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1.发明申请公开(公告)号：US20200166419A1
公开(公告)日：2020-05-28
申请号：US16202102
申请日：2018-11-28
Applicant: Chuen-Lin Tien
Inventor： Chuen-Lin Tien
Abstract: Conventional optical-transmission-type residual stress measuring apparatus cannot be used for completing the measurement of residual stress in an optical film having light reflective property, and conventional optical-reflection-type residual stress measuring apparatus is known failing to achieving the measurement of residual stress in an optical thin film having transparent or translucent property. In view of that, the present invention discloses a system for measuring residual stress in optical thin films, which is able to be utilized for achieving the residual stress measurement of respective optical thin film having transparent or translucent property and that of respective optical thin film having light reflective property. Therefore, it is helpful for largely reducing both the purchase cost and the maintenance cost by only purchasing the residual stress measuring system provided by the present invention instead of simultaneously purchasing the aforesaid two different types of residual stress measuring apparatuses.
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2.发明授权公开(公告)号：US06466308B1
公开(公告)日：2002-10-15
申请号：US09547849
申请日：2000-04-12
Applicant: Cheng-Chung Jaing , Cheng-Chung Lee , Chuen-Lin Tien , Ing-Jer Ho
Inventor： Cheng-Chung Jaing , Cheng-Chung Lee , Chuen-Lin Tien , Ing-Jer Ho
IPC: G01L124
Abstract: The present invention disclose a method for measuring a thermal expansion coefficient of a thin film, in which the thin film is first deposited on two substrates having different thermal expansion coefficients under the same conditions. For each of the two deposited substrates, a relationship between the thin film stresses and the measuring temperatures is established by using a phase shifting interferometry technique, in which the stresses in the thin films are derived by comparing the deflections of the substrates prior to and after the deposition. Based on the two relationships the thermal expansion coefficient, and elastic modulus, E f ( 1 - v f ) , can be calculated, wherein Ef and &ngr;f are the Young's modulus and Poisson's ratio of the thin film, respectively.
Abstract translation: 本发明公开了一种测量薄膜的热膨胀系数的方法，其中薄膜首先在相同条件下沉积在具有不同热膨胀系数的两个基板上。 对于两个沉积的衬底中的每一个，通过使用相移干涉测量技术来建立薄膜应力和测量温度之间的关系，其中薄膜中的应力通过比较在之前和之后的衬底的偏转而导出 沉积。 基于这两个关系，可以计算热膨胀系数和弹性模量，其中Ef和＆ngr; f分别是薄膜的杨氏模量和泊松比。
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3.发明授权公开(公告)号：US10697841B2
公开(公告)日：2020-06-30
申请号：US16202102
申请日：2018-11-28
Applicant: Chuen-Lin Tien
Inventor： Chuen-Lin Tien
Abstract: Conventional optical-transmission-type residual stress measuring apparatus cannot be used for completing the measurement of residual stress in an optical film having light reflective property, and conventional optical-reflection-type residual stress measuring apparatus is known failing to achieving the measurement of residual stress in an optical thin film having transparent or translucent property. In view of that, the present invention discloses a system for measuring residual stress in optical thin films, which is able to be utilized for achieving the residual stress measurement of respective optical thin film having transparent or translucent property and that of respective optical thin film having light reflective property. Therefore, it is helpful for largely reducing both the purchase cost and the maintenance cost by only purchasing the residual stress measuring system provided by the present invention instead of simultaneously purchasing the aforesaid two different types of residual stress measuring apparatuses.
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