公开(公告)号：US20060090691A1

公开(公告)日：2006-05-04

申请号：US10978566

申请日：2004-11-02

申请人： Shih-Shian Ho ,  Hung-Yin Tsai ,  Chia-Jen Ting ,  Chun-Fa Lan ,  Chij-Chang Chen

发明人： Shih-Shian Ho ,  Hung-Yin Tsai ,  Chia-Jen Ting ,  Chun-Fa Lan ,  Chij-Chang Chen

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/30 ,  C30B29/32 ,  C30B33/06

摘要： A method for manufacturing a bonded wafer with ultra-thin single crystal ferroelectric film is provided, comprising the following steps: providing a single crystal ferroelectric wafer and a carrier wafer while activating the surfaces of the single crystal ferroelectric wafer and the carrier wafer; bonding the activated surface of the single crystal ferroelectric wafer to the activated surface of the carrier wafer; and thinning the single crystal ferroelectric wafer for forming an ultra-thin single crystal ferroelectric film. Wherein, the thinning process in the aforesaid preferred embodiment is the method of polishing, grinding, chemical mechanical polishing, or etching. And the bonding force generated in the bonding process is strong enough to resist the shearing force.

摘要翻译： 提供一种制造具有超薄单晶铁电体膜的接合晶片的方法，包括以下步骤：在激活单晶铁电晶片和载体晶片的表面的同时提供单晶铁电晶片和载体晶片; 将单晶铁电晶片的活化表面结合到载体晶片的活化表面; 并使用于形成超薄单晶铁电体膜的单晶铁电晶片变薄。 其中，上述优选实施方式中的变薄处理是抛光，研磨，化学机械抛光或蚀刻的方法。 并且在接合过程中产生的结合力足够强以抵抗剪切力。

公开(公告)号：US07329364B2

公开(公告)日：2008-02-12

申请号：US10978566

申请日：2004-11-02

申请人： Shih-Shian Ho ,  Hung-Yin Tsai ,  Chia-Jen Ting ,  Chun-Fa Lan ,  Chii-Chang Chen

发明人： Shih-Shian Ho ,  Hung-Yin Tsai ,  Chia-Jen Ting ,  Chun-Fa Lan ,  Chii-Chang Chen

IPC分类号： B44C1/22

CPC分类号： C30B29/30 ,  C30B29/32 ,  C30B33/06

摘要： A method for manufacturing a bonded wafer with ultra-thin single crystal ferroelectric film is provided, comprising the following steps: providing a single crystal ferroelectric wafer and a carrier wafer while activating the surfaces of the single crystal ferroelectric wafer and the carrier wafer; bonding the activated surface of the single crystal ferroelectric wafer to the activated surface of the carrier wafer; and thinning the single crystal ferroelectric wafer for forming an ultra-thin single crystal ferroelectric film. Wherein, the thinning process in the aforesaid preferred embodiment is the method of polishing, grinding, chemical mechanical polishing, or etching. And the bonding force generated in the bonding process is strong enough to resist the shearing force.

摘要翻译： 提供一种制造具有超薄单晶铁电体膜的接合晶片的方法，包括以下步骤：在激活单晶铁电晶片和载体晶片的表面的同时提供单晶铁电晶片和载体晶片; 将单晶铁电晶片的活化表面结合到载体晶片的活化表面; 并使用于形成超薄单晶铁电体膜的单晶铁电晶片变薄。 其中，上述优选实施方式中的变薄处理是抛光，研磨，化学机械抛光或蚀刻的方法。 并且在接合过程中产生的结合力足够强以抵抗剪切力。