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1.发明授权Pressure sensor structure and associated method of making a pressure sensor 有权压力传感器结构及其制作压力传感器的相关方法公开(公告)号：US08739632B2
公开(公告)日：2014-06-03
申请号：US13355149
申请日：2012-01-20
CPC分类号： G01L9/0072 , G01L9/12 , Y10T29/49007
摘要： A pressure sensor can include a diaphragm plate of an electrically conductive material, the diaphragm plate including substantially planar opposed first and second surfaces. A layer of a dielectric material can be provided at the first surface of the diaphragm plate along a periphery thereof such that a flexion region of the first surface is substantially free of the dielectric material. The dielectric layer can be configured to engage a fixed structure within a housing to support the flexion region as to enable deflection thereof relative to the fixed structure that changes an electrical characteristic of the pressure sensor in response to application of force at the second surface of the diaphragm plate.
摘要翻译： 压力传感器可以包括导电材料的隔膜板，所述隔膜板包括基本上平面的相对的第一和第二表面。 可以在隔膜板的第一表面沿其周边设置电介质材料层，使得第一表面的弯曲区域基本上不含电介质材料。 电介质层可以被配置成与壳体内的固定结构接合以支撑弯曲区域，以便能够相对于固定结构进行偏转，从而响应于在第二表面施加力而改变压力传感器的电特性 隔膜板。
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2.发明申请公开(公告)号：US20120204652A1
公开(公告)日：2012-08-16
申请号：US13355149
申请日：2012-01-20
CPC分类号： G01L9/0072 , G01L9/12 , Y10T29/49007
摘要： A pressure sensor can include a diaphragm plate of an electrically conductive material, the diaphragm plate including substantially planar opposed first and second surfaces. A layer of a dielectric material can be provided at the first surface of the diaphragm plate along a periphery thereof such that a flexion region of the first surface is substantially free of the dielectric material. The dielectric layer can be configured to engage a fixed structure within a housing to support the flexion region as to enable deflection thereof relative to the fixed structure that changes an electrical characteristic of the pressure sensor in response to application of force at the second surface of the diaphragm plate.
摘要翻译： 压力传感器可以包括导电材料的隔膜板，所述隔膜板包括基本上平面的相对的第一和第二表面。 可以在隔膜板的第一表面沿其周边设置电介质材料层，使得第一表面的弯曲区域基本上不含电介质材料。 电介质层可以被配置成与壳体内的固定结构接合以支撑弯曲区域，以便能够相对于固定结构进行偏转，从而响应于在第二表面施加力而改变压力传感器的电特性 隔膜板。
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3.发明申请Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film 有权用超薄单晶铁电薄膜制造贴片晶圆的方法公开(公告)号：US20060090691A1
公开(公告)日：2006-05-04
申请号：US10978566
申请日：2004-11-02
申请人： Shih-Shian Ho , Hung-Yin Tsai , Chia-Jen Ting , Chun-Fa Lan , Chij-Chang Chen
发明人： Shih-Shian Ho , Hung-Yin Tsai , Chia-Jen Ting , Chun-Fa Lan , Chij-Chang Chen
摘要： A method for manufacturing a bonded wafer with ultra-thin single crystal ferroelectric film is provided, comprising the following steps: providing a single crystal ferroelectric wafer and a carrier wafer while activating the surfaces of the single crystal ferroelectric wafer and the carrier wafer; bonding the activated surface of the single crystal ferroelectric wafer to the activated surface of the carrier wafer; and thinning the single crystal ferroelectric wafer for forming an ultra-thin single crystal ferroelectric film. Wherein, the thinning process in the aforesaid preferred embodiment is the method of polishing, grinding, chemical mechanical polishing, or etching. And the bonding force generated in the bonding process is strong enough to resist the shearing force.
摘要翻译： 提供一种制造具有超薄单晶铁电体膜的接合晶片的方法，包括以下步骤：在激活单晶铁电晶片和载体晶片的表面的同时提供单晶铁电晶片和载体晶片; 将单晶铁电晶片的活化表面结合到载体晶片的活化表面; 并使用于形成超薄单晶铁电体膜的单晶铁电晶片变薄。 其中，上述优选实施方式中的变薄处理是抛光，研磨，化学机械抛光或蚀刻的方法。 并且在接合过程中产生的结合力足够强以抵抗剪切力。
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4.发明授权Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film 有权用超薄单晶铁电薄膜制造贴片晶圆的方法公开(公告)号：US07329364B2
公开(公告)日：2008-02-12
申请号：US10978566
申请日：2004-11-02
申请人： Shih-Shian Ho , Hung-Yin Tsai , Chia-Jen Ting , Chun-Fa Lan , Chii-Chang Chen
发明人： Shih-Shian Ho , Hung-Yin Tsai , Chia-Jen Ting , Chun-Fa Lan , Chii-Chang Chen
IPC分类号： B44C1/22
摘要： A method for manufacturing a bonded wafer with ultra-thin single crystal ferroelectric film is provided, comprising the following steps: providing a single crystal ferroelectric wafer and a carrier wafer while activating the surfaces of the single crystal ferroelectric wafer and the carrier wafer; bonding the activated surface of the single crystal ferroelectric wafer to the activated surface of the carrier wafer; and thinning the single crystal ferroelectric wafer for forming an ultra-thin single crystal ferroelectric film. Wherein, the thinning process in the aforesaid preferred embodiment is the method of polishing, grinding, chemical mechanical polishing, or etching. And the bonding force generated in the bonding process is strong enough to resist the shearing force.
摘要翻译： 提供一种制造具有超薄单晶铁电体膜的接合晶片的方法，包括以下步骤：在激活单晶铁电晶片和载体晶片的表面的同时提供单晶铁电晶片和载体晶片; 将单晶铁电晶片的活化表面结合到载体晶片的活化表面; 并使用于形成超薄单晶铁电体膜的单晶铁电晶片变薄。 其中，上述优选实施方式中的变薄处理是抛光，研磨，化学机械抛光或蚀刻的方法。 并且在接合过程中产生的结合力足够强以抵抗剪切力。
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