公开(公告)号：US20070074541A1

公开(公告)日：2007-04-05

申请号：US10575199

申请日：2004-10-08

Applicant: John Badding ,  Daniel Hewak ,  Chung-Che Huang

Inventor： John Badding ,  Daniel Hewak ,  Chung-Che Huang

IPC: C03B37/023 ,  C03B37/018

CPC classification number: C03C3/323 ,  C03B19/106 ,  C03B37/01807 ,  C03B2201/88 ,  C03C3/253 ,  C03C3/321 ,  C03C12/00 ,  C03C13/043 ,  C03C17/02 ,  C23C16/305 ,  G02B6/132

Abstract: The invention relates to synthesis of germanium sulphide glasses and optical devices formed therefrom. In a chemical vapour deposition process, germanium tetrachloride is reacted with hydrogen sulphide at temperatures in the range 450-700° C. to form germanium sulphide. Lower temperatures within this range of 450-550° C. directly produce a glass, whereas higher temperatures within the range of 600-700° C. produce a crystalline powder which can then be reduced to a glass by subsequent melting and annealing. The reaction is preferably carried out at atmospheric pressure or slightly higher. Thin films and bulk glasses suitable for optical waveguides can be formed directly in one processing step as can powders and microspheres. The materials synthesised are of a high purity with low oxide impurities and only trace levels of transition metal ions.

Abstract translation: 本发明涉及由其形成的硫化锗玻璃和光学器件的合成。 在化学气相沉积方法中，四氯化锗在450-700℃的温度下与硫化氢反应形成硫化锗。 在450-550℃范围内的较低温度直接生成玻璃，而在600-700℃范围内的较高温度产生结晶性粉末，然后可以通过随后的熔融和退火将其还原成玻璃。 反应优选在大气压或稍高的温度下进行。 适用于光波导的薄膜和散装玻璃可以直接在一个加工步骤中形成，如粉末和微球。 合成的材料具有高纯度，低氧化物杂质和仅痕量的过渡金属离子。

公开(公告)号：US08034690B2

公开(公告)日：2011-10-11

申请号：US12696055

申请日：2010-01-29

Applicant: Ping-Chia Shih ,  Yu-Cheng Wang ,  Chun-Sung Huang ,  Yuan-Cheng Yang ,  Chung-Che Huang ,  Chin-Fu Lin

Inventor： Ping-Chia Shih ,  Yu-Cheng Wang ,  Chun-Sung Huang ,  Yuan-Cheng Yang ,  Chung-Che Huang ,  Chin-Fu Lin

IPC: H01L21/336

CPC classification number: H01L21/311

Abstract: An exemplary method of etching an oxide layer and a nitride layer is provided. In particular, a substrate is provided. A surface of the substrate has an isolating structure projecting therefrom. A first oxide layer, a nitride layer and a second oxide layer are sequentially provided on the surface of the substrate, wherein the first oxide layer is uncovered on the isolating structure, the nitride layer is formed overlying the first oxide layer, and the second oxide layer is formed overlying the nitride layer. An isotropic etching process is performed by using an etching mask unmasking the isolating structure, and thereby removing the unmasked portion of the second oxide layer and the unmasked portion of the nitride layer and further exposing sidewalls of the isolating structure. The unmasked portion of the first oxide layer generally is partially removed due to over-etching.

Abstract translation: 提供蚀刻氧化物层和氮化物层的示例性方法。 特别地，提供了基板。 基板的表面具有从其突出的隔离结构。 第一氧化物层，氮化物层和第二氧化物层依次设置在衬底的表面上，其中第一氧化物层未被覆盖在隔离结构上，氮化物层形成在第一氧化物层上，第二氧化物 层叠在氮化物层上。 通过使用非掩蔽隔离结构的蚀刻掩模进行各向同性蚀刻处理，从而去除第二氧化物层的未掩模部分和氮化物层的未掩模部分，并进一步暴露隔离结构的侧壁。 由于过蚀刻，第一氧化物层的未掩模部分通常被部分去除。

公开(公告)号：US20110189859A1

公开(公告)日：2011-08-04

申请号：US12696055

申请日：2010-01-29

Applicant: Ping-Chia Shih ,  Yu-Cheng Wang ,  Chun-Sung Huang ,  Yuan-Cheng Yang ,  Chung-Che Huang ,  Chin-Fu Lin

Inventor： Ping-Chia Shih ,  Yu-Cheng Wang ,  Chun-Sung Huang ,  Yuan-Cheng Yang ,  Chung-Che Huang ,  Chin-Fu Lin

IPC: H01L21/311

CPC classification number: H01L21/311

Abstract: An exemplary method of etching an oxide layer and a nitride layer is provided. In particular, a substrate is provided. A surface of the substrate has an isolating structure projecting therefrom. A first oxide layer, a nitride layer and a second oxide layer are sequentially provided on the surface of the substrate, wherein the first oxide layer is uncovered on the isolating structure, the nitride layer is formed overlying the first oxide layer, and the second oxide layer is formed overlying the nitride layer. An isotropic etching process is performed by using an etching mask unmasking the isolating structure, and thereby removing the unmasked portion of the second oxide layer and the unmasked portion of the nitride layer and further exposing sidewalls of the isolating structure. The unmasked portion of the first oxide layer generally is partially removed due to over-etching.

Abstract translation: 提供蚀刻氧化物层和氮化物层的示例性方法。 特别地，提供了基板。 基板的表面具有从其突出的隔离结构。 第一氧化物层，氮化物层和第二氧化物层依次设置在衬底的表面上，其中第一氧化物层未被覆盖在隔离结构上，氮化物层形成在第一氧化物层上，第二氧化物 层叠在氮化物层上。 通过使用非掩蔽隔离结构的蚀刻掩模进行各向同性蚀刻处理，从而去除第二氧化物层的未掩模部分和氮化物层的未掩模部分，并进一步暴露隔离结构的侧壁。 由于过蚀刻，第一氧化物层的未掩模部分通常被部分去除。