公开(公告)号：US06180419B2

公开(公告)日：2001-01-30

申请号：US08715934

申请日：1996-09-19

Applicant: Hsiao-Yi Lin ,  Tan-Fu Lei ,  Ci-Lin Pan ,  Chun Y. Chang ,  Jz-Jan Jeng

Inventor： Hsiao-Yi Lin ,  Tan-Fu Lei ,  Ci-Lin Pan ,  Chun Y. Chang ,  Jz-Jan Jeng

IPC: H01L2100

CPC classification number: G01R33/07

Abstract: A method for manufacturing a magnetic field transducing device is provided which includes (a) providing a substrate, (b) subjecting the substrate to a semiconductor device fabricating process in order to obtain a magnetic field transducer, (c) forming an oxide over the magnetic field transducer and (d) covering a magnetic film on the oxide in order to obtain the magnetic field transducing device. The semiconductor device fabricating process also includes (b1) utilizing a mask photolithography etching process to form an annular groove on the substrate, (b2) covering a first insulating layer on the substrate and using a second mask photolithography etching process to form a plurality of diffusing openings on the first insulation layer, (b3) forming extrinsic semiconductor region on the substrate exposed by the plurality of diffusing openings, (b4) forming a second insulation layer on the substrate, (b5) utilizing a third mask photolithography etching process to form a plurality of contacts on the extrinsic semiconductor region, and (b6) forming a conductor on the substrate in order to form a connecting line. The magnetic film is preferably made of Ni and Co.

Abstract translation: 提供了一种用于制造磁场换能装置的方法，该方法包括：（a）提供一基板，（b）使基板经受半导体器件制造工艺以获得一磁场换能器;（c） 场传感器和（d）覆盖氧化物上的磁性膜以获得磁场换能装置。 半导体器件制造工艺还包括（b1）利用掩模光刻蚀刻工艺在衬底上形成环形沟槽，（b2）覆盖衬底上的第一绝缘层，并使用第二掩模光刻蚀刻工艺形成多个扩散 在第一绝缘层上的开口，（b3）在由多个扩散开口暴露的衬底上形成非本征半导体区域，（b4）在衬底上形成第二绝缘层，（b5）利用第三掩模光刻蚀刻工艺形成 在外部半导体区域上的多个触点，以及（b6）在基板上形成导体以形成连接线。 磁性膜优选由Ni和Co制成