摘要:
An apparatus is disclosed for evaluating thermal and electrical characteristics of a sample. An intensity modulated pump beam is focused onto the surface of a sample at one spot. A non-modulated probe beam is focused onto the sample at a second spot, spaced laterally and vertically from the first spot. The distance between the two spots is at least two microns. The modulated power of the reflected probe beam that is in phase with the pump beam modulation frequency is monitored to provide information about the characteristics of the sample. The apparatus is particularly useful in evaluating the integrity of metal lines and vias in a semiconductor sample.