公开(公告)号：US5228776A

公开(公告)日：1993-07-20

申请号：US879760

申请日：1992-05-06

申请人： Walter L. Smith ,  Clifford G. Wells ,  Allan Rosencwaig

发明人： Walter L. Smith ,  Clifford G. Wells ,  Allan Rosencwaig

IPC分类号： G01N25/72

CPC分类号： G01N25/72

摘要： An apparatus is disclosed for evaluating thermal and electrical characteristics of a sample. An intensity modulated pump beam is focused onto the surface of a sample at one spot. A non-modulated probe beam is focused onto the sample at a second spot, spaced laterally and vertically from the first spot. The distance between the two spots is at least two microns. The modulated power of the reflected probe beam that is in phase with the pump beam modulation frequency is monitored to provide information about the characteristics of the sample. The apparatus is particularly useful in evaluating the integrity of metal lines and vias in a semiconductor sample.

摘要翻译： 公开了一种用于评估样品的热和电特性的装置。 强度调制泵浦光束在一个点聚焦在样品的表面上。 未调制探测光束在第二光点聚焦在样品上，与第一光斑横向和垂直间隔。 两个点之间的距离至少为2微米。 监测与泵浦光束调制频率同相的反射探测光束的调制功率，以提供有关样品特性的信息。 该装置在评估半导体样品中金属线和通孔的完整性方面特别有用。

公开(公告)号：US4636088A

公开(公告)日：1987-01-13

申请号：US612076

申请日：1984-05-21

申请人： Allan Rosencwaig ,  Walter L. Smith

发明人： Allan Rosencwaig ,  Walter L. Smith

IPC分类号： G01N21/00 ,  G01N21/17 ,  G01N21/55 ,  G01N21/41 ,  G01N25/00

CPC分类号： G01N21/171

摘要： An apparatus and method is disclosed for evaluating surface conditions on a sample. The system is particularly suited for detecting thin residues encountered in semiconductor lithographic and etching processes. The system is also capable of measuring ion implanted dopant concentrations prior to annealing. The apparatus includes an intensity modulated laser beam which is focused on the surface of the sample to generate periodic heating. A second light beam is focused onto the periodically heated area of the sample in a manner such that it is reflected to a detector. The intensity changes in the probe beam, resulting from the temperature induced changes of reflectivity at the surface of the sample, are measured and evaluated to determine the absence or presence of residues, or to measure the concentrations of ion implanted dopants.

摘要翻译： 公开了一种用于评估样品上的表面状况的装置和方法。 该系统特别适用于检测半导体光刻和蚀刻工艺中遇到的薄残留物。 该系统还能够在退火之前测量离子注入的掺杂剂浓度。 该装置包括强度调制的激光束，其聚焦在样品的表面上以产生周期性加热。 第二光束以使得其被反射到检测器的方式聚焦在样品的周期性加热区域上。 测量和评估由温度引起的样品表面反射率变化导致的探针光束强度变化，以评估残留物的不存在或存在，或测量离子注入掺杂剂的浓度。

公开(公告)号：US4854710A

公开(公告)日：1989-08-08

申请号：US76876

申请日：1987-07-23

申请人： Jon Opsal ,  Allan Rosencwaig ,  Walter L. Smith

发明人： Jon Opsal ,  Allan Rosencwaig ,  Walter L. Smith

IPC分类号： G01N23/203 ,  G01N21/17 ,  G01R31/265

CPC分类号： G01R31/2656 ,  G01N21/171

摘要： A method and apparatus are disclosed for evaluating surface and subsurface features in a semiconductor sample. In operation, a periodic energy source is applied to the surface of the semiconductor sample to generate a periodic electron-hole plasma. This plasma interacts with features in the sample as it diffuses. The plasma affects the index of refraction of the sample and the changing plasma density is monitored using a radiation probe. In the preferred embodiment, the radiation probe measures the plasma induced periodic changes of reflectivity of the surface of the sample to yield information about the sample, such as ion dopant concentrations, residue deposits and defects.

摘要翻译： 公开了一种用于评估半导体样品中的表面和地下特征的方法和装置。 在操作中，将周期性能量源施加到半导体样品的表面以产生周期性电子空穴等离子体。 这种等离子体在扩散时与样品中的特征相互作用。 等离子体影响样品的折射率，并且使用辐射探针监测改变的等离子体密度。 在优选实施例中，辐射探针测量等离子体诱导的样品表面的反射率的周期性变化，以产生关于样品的信息，例如离子掺杂剂浓度残余物沉积物和缺陷。

公开(公告)号：US4750822A

公开(公告)日：1988-06-14

申请号：US845606

申请日：1986-03-28

申请人： Allan Rosencwaig ,  Jon Opsal ,  Walter L. Smith

发明人： Allan Rosencwaig ,  Jon Opsal ,  Walter L. Smith

IPC分类号： G01B11/30 ,  G01N21/17 ,  G01N21/21 ,  G01N21/88 ,  G01N21/94 ,  G01N21/956 ,  G01N21/41

CPC分类号： G01N21/88 ,  G01N21/17 ,  G01N2021/1744 ,  G01N2021/178 ,  G01N2021/1789 ,  G01N21/21 ,  G01N21/4738

摘要： A method and apparatus is disclosed for detecting defect surface states in any material and in particular semiconductors. In the subject device, a periodic localized excitation is generated at the surface of the sample with an intensity modulated pump laser beam. A probe laser beam is directed to the surface of the sample and changes in the probe beam which are in phase with the modulated pump frequency are detected. In the preferred embodiment, periodic changes in the optical reflectivity of the surface of the sample induced by an intensity modulated excitation beam are detected by measuring the corresponding modulations in the reflected power of the probe beam. Any time dependence of the probe beam modulated reflectance signal is monitored. An evaluation of defect surface states is then made by investigating the time dependence of the magnitude and/or phase of this probe beam modulated reflectance signal.

摘要翻译： 公开了用于检测任何材料，特别是半导体中的缺陷表面状态的方法和装置。 在本装置中，在强度调制的泵浦激光束的样品表面产生周期性局部激发。 探针激光束被引导到样品的表面，并且检测到与调制的泵频率同相的探针光束的变化。 在优选实施例中，通过测量探针光束的反射功率的相应调制来检测由强度调制的激发光束引起的样品的表面的光学反射率的周期性变化。 监测探测光束调制反射信号的任何时间依赖性。 然后通过研究该探测光束调制反射信号的幅度和/或相位的时间依赖性来进行缺陷表面状态的评估。

公开(公告)号：US5042952A

公开(公告)日：1991-08-27

申请号：US550333

申请日：1990-07-09

申请人： Jon Opsal ,  Allan Rosencwaig ,  Walter L. Smith

发明人： Jon Opsal ,  Allan Rosencwaig ,  Walter L. Smith

IPC分类号： G01N21/17 ,  G01R31/265

CPC分类号： G01N21/171 ,  G01R31/2656

摘要： A method and apparatus are disclosed for evaluating surface and subsurface features in a semiconductor sample. In operation, a periodic energy source is applied to the surface of the semiconductor sample to generate a periodic electron-hole plasma. This plasma interacts with features in the sample as it diffuses. The plasma affects the index of refraction of the sample and the changing plasma density is monitored using a radiation probe. In the preferred embodiment, the radiation probe measures the plasma induced periodic changes of reflectivity of the surface of the sample to yield information about the sample, such as ion dopant concentrations, residue deposits and defects.

摘要翻译： 公开了一种用于评估半导体样品中的表面和地下特征的方法和装置。 在操作中，将周期性能量源施加到半导体样品的表面以产生周期性电子空穴等离子体。 这种等离子体在扩散时与样品中的特征相互作用。 等离子体影响样品的折射率，并且使用辐射探针监测改变的等离子体密度。 在优选实施例中，辐射探针测量等离子体诱导的样品表面的反射率的周期性变化，以产生关于样品的信息，例如离子掺杂剂浓度，残余物沉积物和缺陷。

公开(公告)号：US4952063A

公开(公告)日：1990-08-28

申请号：US351540

申请日：1989-05-15

申请人： Jon Opsal ,  Allan Rosencwaig ,  Walter L. Smith

发明人： Jon Opsal ,  Allan Rosencwaig ,  Walter L. Smith

IPC分类号： G01N21/17 ,  G01R31/265

CPC分类号： G01N21/171 ,  G01R31/2656

摘要： A method and apparatus are disclosed for evaluating surface and subsurface features in a semiconductor sample. In operation, a periodic energy source is applied to the surface of the semiconductor sample to generate a periodic electron-hole plasma. This plasma interacts with features in the sample as it diffuses. The plasma affects the index of refraction of the sample and the changing plasma density is monitored using a radiation probe. In the preferred embodiment, the radiation probe measures the plasma induced periodic changes of reflectivity of the surface of the sample to yield information about the sample, such as ion dopant concentrations, residue deposits and defects.

摘要翻译： 公开了一种用于评估半导体样品中的表面和地下特征的方法和装置。 在操作中，将周期性能量源施加到半导体样品的表面以产生周期性电子空穴等离子体。 这种等离子体在扩散时与样品中的特征相互作用。 等离子体影响样品的折射率，并且使用辐射探针监测改变的等离子体密度。 在优选实施例中，辐射探针测量等离子体诱导的样品表面的反射率的周期性变化，以产生关于样品的信息，例如离子掺杂剂浓度，残余物沉积物和缺陷。

公开(公告)号：US4579463A

公开(公告)日：1986-04-01

申请号：US612075

申请日：1984-05-21

申请人： Allan Rosencwaig ,  Jon Opsal ,  Walter L. Smith ,  David L. Willenborg

发明人： Allan Rosencwaig ,  Jon Opsal ,  Walter L. Smith ,  David L. Willenborg

IPC分类号： G01J5/00 ,  G01N21/01 ,  G01N21/17 ,  G01N21/55 ,  G01N25/00 ,  G01N25/72 ,  G01N29/00 ,  G01N21/41

CPC分类号： G01N21/55 ,  G01N25/00 ,  G01N25/72

摘要： A method and apparatus is disclosed for detecting thermal waves. This system is based on the measurement of the change in reflectivity at the sample surface which is a function of the changing surface temperature. The apparatus includes a radiation probe beam that is directed on a portion of the area which is being periodically heated. A photodetector is aligned to sense the intensity changes in the reflected radiation probe beam which results from the periodic heating. These signals are processed to detect the presence of thermal waves.

摘要翻译： 公开了一种用于检测热波的方法和装置。 该系统基于样品表面的反射率变化的测量，该变化是表面温度变化的函数。 该装置包括一个辐射探针光束，该辐射探针光束被定向在正被周期性地加热的区域的一部分上。 对准光电检测器以感测由周期性加热产生的反射辐射探针光束的强度变化。 处理这些信号以检测热波的存在。

公开(公告)号：US20050248773A1

公开(公告)日：2005-11-10

申请号：US11109525

申请日：2005-04-18

申请人： Allan Rosencwaig

发明人： Allan Rosencwaig

IPC分类号： G01B9/02 ,  G01B11/06 ,  G01N21/21

CPC分类号： G01N21/211 ,  G01B11/0625 ,  G01N2021/213

摘要： Device and method for measuring complex reflectance using a light source for generating a light beam with known polarization state, a lens for focusing the beam onto a sample surface such that various rays within the focused beam create a spread of angles of incidence θ, a waveplate for retarding one polarization state of the beam, a polarizer for generating interference between beam polarization states, and a detector with a two dimensional array of detector elements for generating intensity signals in response to the beam, wherein each detector element corresponds to a unique angle of incidence θ and azimuthal angle φ of the reflected beam. A processor calculates magnitude and phase values for the reflected beam by using the intensity signals corresponding to at least one incident angle θ and a plurality of azimuthal angles φ within the at least one incident angle θ sufficient to enable a meaningful Fourier analysis thereof.

摘要翻译： 用于产生具有已知偏振态的光束的光源来测量复反射率的装置和方法，用于将光束聚焦到样品表面上的透镜，使得聚焦光束内的各种光线产生入射角θ的扩散，波片 用于延迟光束的一个偏振状态，用于产生光束偏振状态之间的干涉的偏振器和具有用于响应于光束产生强度信号的检测器元件的二维阵列的检测器，其中每个检测器元件对应于 反射光束的入射角和方位角phi。 处理器通过使用对应于至少一个入射角θ的强度信号和至少一个入射角θ内的多个方位角phi来计算反射光束的幅度和相位值，足以使其能够进行有意义的傅里叶分析。

公开(公告)号：US06829057B2

公开(公告)日：2004-12-07

申请号：US10658176

申请日：2003-09-09

申请人： Jon Opsal ,  Allan Rosencwaig

发明人： Jon Opsal ,  Allan Rosencwaig

IPC分类号： G01B1114

CPC分类号： G01B11/024 ,  G01B11/02 ,  G01B11/14 ,  G03F7/70625

摘要： A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is used to focus the probe beam on the sample in a manner so that rays within the probe beam create a spread of angles of incidence. The size of the probe beam spot on the sample is larger than the spacing between the features of the periodic structure so some of the light is scattered from the structure. A detector is provided for monitoring the reflected and scattered light. The detector includes multiple detector elements arranged so that multiple output signals are generated simultaneously and correspond to multiple angles of incidence. The output signals are supplied to a processor which analyzes the signals according to a scattering model which permits evaluation of the geometry of the periodic structure. In one embodiment, the sample is scanned with respect to the probe beam and output signals are generated as a function of position of the probe beam spot.

公开(公告)号：US06774997B2

公开(公告)日：2004-08-10

申请号：US10395746

申请日：2003-03-24

申请人： Allan Rosencwaig ,  Jon Opsal

发明人： Allan Rosencwaig ,  Jon Opsal

IPC分类号： G01J400

CPC分类号： G01B11/0641

摘要： An optical measurement system is disclosed for evaluating samples with multi-layer thin film stacks. The optical measurement system includes a reference ellipsometer and one or more non-contact optical measurement devices. The reference ellipsometer is used to calibrate the other optical measurement devices. Once calibration is completed, the system can be used to analyze multi-layer thin film stacks. In particular, the reference ellipsometer provides a measurement which can be used to determine the total optical thickness of the stack. Using that information coupled with the measurements made by the other optical measurement devices, more accurate information about individual layers can be obtained.

摘要翻译： 公开了一种用于评估具有多层薄膜叠层的样品的光学测量系统。 光学测量系统包括参考椭偏仪和一个或多个非接触光学测量装置。 参考椭偏仪用于校准其他光学测量装置。 一旦校准完成，该系统可用于分析多层薄膜堆叠。 特别地，参考椭偏仪提供可用于确定叠层的总光学厚度的测量。 使用与其他光学测量装置的测量结合的信息，可以获得关于各个层的更准确的信息。