公开(公告)号：US20140360566A1

公开(公告)日：2014-12-11

申请号：US14373600

申请日：2013-01-30

Applicant: DOW GLOBAL TECHNOLOGIESD LLC ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Gregory M. Kimball ,  Marty W. DeGroot ,  Harry A. Atwater ,  Nathan S. Lewis ,  Rebekah K. Feist ,  Jeffrey P. Bosco

IPC: H01L21/477 ,  H01L31/18 ,  H01L31/032

CPC classification number: H01L21/477 ,  H01L31/032 ,  H01L31/072 ,  H01L31/075 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/548

Abstract: The present invention provides methods of making photovoltaic devices incorporating improved pnictide semiconductor films. In particular, the principles of the present invention are used to improve the surface quality of pnictide films. Photovoltaic devices incorporating these films demonstrate improved electronic performance. As an overview, the present invention involves a methodology that metalizes the pnictide film, anneals the metalized film under conditions that tend to form an alloy between the pnictide film and the alloy, and then removes the excess metal and at least a portion of the alloy. In one mode of practice, the pnictide semiconductor is Zinc phosphide and the metal is Magnesium.

Abstract translation: 本发明提供了制造具有改进的pnictide半导体膜的光伏器件的方法。 特别地，本发明的原理被用来改善pnictide膜的表面质量。 结合这些膜的光伏器件表现出改进的电子性能。 作为概述，本发明涉及一种使pnictide膜金属化的方法，在倾向于在pnictide膜和合金之间形成合金的条件下退火金属化膜，然后除去多余的金属和至少一部分合金 。 在一种实践中，pnictide半导体是磷化锌，金属是镁。

公开(公告)号：US20150011042A1

公开(公告)日：2015-01-08

申请号：US14373598

申请日：2013-01-30

Applicant: DOW GLOBAL TECHNOLOGIESD LLC ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Gregory M. Kimball ,  Harry A. Atwater ,  Nathan S. Lewis ,  Jeffrey P. Bosco ,  Rebekah K. Feist

IPC: H01L31/18 ,  H01L31/032

CPC classification number: H01L31/18 ,  H01L31/022466 ,  H01L31/032 ,  H01L31/075 ,  H01L31/20 ,  Y02E10/548

Abstract: The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.

Abstract translation: 本发明使用涉及在pnictide半导体膜的表面上形成富含富含富含亚硝酸盐区域的蚀刻处理的处理。在许多实践模式中，该区域非常薄，通常在2至3nm厚的数量级 许多实施例。 以前的调查人员已经离开了该地区，而不理解其存在的事实和/或其存在（如果知道）可能会损害所得设备的电子性能。 本发明认识到，区域的形成和去除有利地使得pnictide膜表面在电子缺陷减少的情况下非常平滑。 表面准备好进一步的器件制造。