公开(公告)号：US20060019426A1

公开(公告)日：2006-01-26

申请号：US11242817

申请日：2005-10-03

申请人： Chang-Young Jeong ,  Dae-Ung Shin ,  Hong-Ik Kim

发明人： Chang-Young Jeong ,  Dae-Ung Shin ,  Hong-Ik Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

摘要： The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

摘要翻译： 采用CMOS图像传感器的制造方法，通过在微透镜之间采用开口来防止相邻微透镜之间的桥接现象。 该方法包括以下步骤：制备其中通过预定工艺获得的包括隔离区和其中的光电二极管的半导体衬底; 依次形成在半导体衬底上的层间电介质（ILD），金属互连和钝化层; 在所述钝化层上形成具有多个滤色器的滤色器阵列; 通过使用正性光致抗蚀剂或负型光致抗蚀剂在滤色器阵列上形成覆盖层（OCL）; 通过使用预定的掩模图案化OCL来在OCL中形成开口; 并在图案化的OCL上形成圆顶型微透镜。

公开(公告)号：US06979588B2

公开(公告)日：2005-12-27

申请号：US10737227

申请日：2003-12-16

申请人： Chang-Young Jeong ,  Dae-Ung Shin ,  Hong-Ik Kim

发明人： Chang-Young Jeong ,  Dae-Ung Shin ,  Hong-Ik Kim

IPC分类号： G02B3/00 ,  H01L21/00 ,  H01L27/00 ,  H01L27/14 ,  H01L27/146 ,  H01L31/062 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

摘要： The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

摘要翻译： 采用CMOS图像传感器的制造方法，通过在微透镜之间采用开口来防止相邻微透镜之间的桥接现象。 该方法包括以下步骤：制备其中通过预定工艺获得的包括隔离区和其中的光电二极管的半导体衬底; 依次形成在半导体衬底上的层间电介质（ILD），金属互连和钝化层; 在所述钝化层上形成具有多个滤色器的滤色器阵列; 通过使用正性光致抗蚀剂或负型光致抗蚀剂在滤色器阵列上形成覆盖层（OCL）; 通过使用预定的掩模图案化OCL来在OCL中形成开口; 并在图案化的OCL上形成圆顶型微透镜。

公开(公告)号：US07670867B2

公开(公告)日：2010-03-02

申请号：US11242817

申请日：2005-10-03

申请人： Chang-Young Jeong ,  Dae-Ung Shin ,  Hong-Ik Kim

发明人： Chang-Young Jeong ,  Dae-Ung Shin ,  Hong-Ik Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

摘要： The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

摘要翻译： 采用CMOS图像传感器的制造方法，通过在微透镜之间采用开口来防止相邻微透镜之间的桥接现象。 该方法包括以下步骤：制备其中通过预定工艺获得的包括隔离区和其中的光电二极管的半导体衬底; 依次形成在半导体衬底上的层间电介质（ILD），金属互连和钝化层; 在所述钝化层上形成具有多个滤色器的滤色器阵列; 通过使用正性光致抗蚀剂或负型光致抗蚀剂在滤色器阵列上形成覆盖层（OCL）; 通过使用预定的掩模图案化OCL来在OCL中形成开口; 并在图案化的OCL上形成圆顶型微透镜。