公开(公告)号：US20080292525A1

公开(公告)日：2008-11-27

申请号：US11571992

申请日：2005-07-01

Applicant: Dag O. Eriksen ,  Oddvar Gorset

Inventor： Dag O. Eriksen ,  Oddvar Gorset

IPC: C01B33/03 ,  B01J19/00

CPC classification number: B01J19/2405 ,  B01J19/2415 ,  B01J19/243 ,  B01J2219/00159 ,  B01J2219/00164 ,  C01B33/027 ,  C01B33/029 ,  C01B33/03

Abstract: This invention relates to a method and reactor for continuous production of semiconductor grade silicon by decomposition of a silicon containing gas of ultra-high purity to particulate silicon and other decomposition products in a free-space reactor and in which the gaseous stream of decomposition gas is set into a swirl motion. Optionally the method and reactor also includes means for melting the formed particulate silicon to obtain a continuous phase of elementary silicon, and then casting the liquid silicon to form solid objects of semiconductor grade silicon.

Abstract translation: 本发明涉及一种用于通过在自由空间反应器中将超高纯度含硅气体分解为微粒硅和其它分解产物来连续生产半导体级硅的方法和反应器，其中分解气体的气流为 设置成漩涡动作。 任选地，方法和反应器还包括用于熔化形成的颗粒状硅以获得基本硅的连续相的装置，然后浇铸液态硅以形成半导体级硅的固体物体。