公开(公告)号：US06232624B1

公开(公告)日：2001-05-15

申请号：US09351809

申请日：1999-07-12

Applicant: Mehran Matloubian ,  Daniel Docter ,  Miroslav Micovic

Inventor： Mehran Matloubian ,  Daniel Docter ,  Miroslav Micovic

IPC: H01L310328

CPC classification number: H01L29/201 ,  H01L29/7787

Abstract: A high electron mobility transistor (HEMT) includes a substrate comprising indium phosphide and an optional buffer layer immediately adjacent the substrate. A channel layer immediately is adjacent the buffer layer, with the channel layer comprising indium phosphide antimonide and characterized by a formula of InPxSb(1−x), wherein x is about 0.85. The channel layer has a thickness of about 120 Angstroms. A Schottky layer is immediately adjacent the channel layer and a contact layer is immediately adjacent the Schottky layer. The transistor is characterized by a breakdown field of about 400 kV/cm and a saturated velocity of about 8.2×106 cm/s.

Abstract translation: 高电子迁移率晶体管（HEMT）包括包含磷化铟和与衬底紧邻的可选缓冲层的衬底。 沟道层立即与缓冲层相邻，其中沟道层包含磷酸铟锑化物，其特征在于式为InPxSb（1-x），其中x为约0.85。 沟道层的厚度约为120埃。 肖特基层紧邻沟道层，接触层紧邻肖特基层。 晶体管的特征在于约400kV / cm的击穿场和约8.2×10 6 cm / s的饱和速度。

公开(公告)号：US06229189B1

公开(公告)日：2001-05-08

申请号：US09222612

申请日：1998-12-24

Applicant: Daniel Yap ,  Daniel Docter ,  William Stanchina

Inventor： Daniel Yap ,  Daniel Docter ,  William Stanchina

IPC: H01L2714

CPC classification number: H01L31/12 ,  H01L31/03046

Abstract: An optoelectronic device has an epitaxial layer structure that has a substrate and a first layer formed adjacent to the substrate. The first layer may, for example, form a contact layer. A second layer is formed adjacent to the first layer. The second layer forms a selectively optically varying layer, so that during a first state the second layer is optically absorbing and during a second state the layer is optically transparent. A third layer is formed adjacent to the second layer. A fourth layer is formed adjacent to the third layer. The fourth layer is an optically transparent layer. An optoelectronic device and an electronic device may be formed on the same substrate that share the same layers. The layers used depends upon the devices formed.

Abstract translation: 光电子器件具有外延层结构，其具有衬底和邻近衬底形成的第一层。 第一层可以例如形成接触层。 形成与第一层相邻的第二层。 第二层形成选择性光学变化的层，使得在第一状态期间第二层是光学吸收的，并且在第二状态期间该层是光学透明的。 形成与第二层相邻的第三层。 形成与第三层相邻的第四层。 第四层是光学透明层。 可以在共享相同层的相同基板上形成光电子器件和电子器件。 使用的层取决于所形成的装置。