公开(公告)号：US06784430B2

公开(公告)日：2004-08-31

申请号：US10277940

申请日：2002-10-23

申请人： Kevin S. Matocha ,  Jeffrey B. Fedison ,  James W. Kretchmer ,  Dale M. Brown ,  Peter M. Sandvik

发明人： Kevin S. Matocha ,  Jeffrey B. Fedison ,  James W. Kretchmer ,  Dale M. Brown ,  Peter M. Sandvik

IPC分类号： H01L2714

CPC分类号： G01J5/0014 ,  G01J1/0488 ,  G01J1/42 ,  G01J5/602 ,  H04M3/382 ,  H04M3/42314 ,  H04M3/4234

摘要： A flame sensor for combustion flame temperature determination comprises elongated extensions that are positioned with parallel interdigitated longitudinal axis with respect to one another. An optical spectrometer comprises the sensor and a system comprises the sensor. A method for combustion flame temperature determination comprises obtaining a first photodiode signal and a second photodiode signal by using photodiode devices comprising photodiodes with elongated extending interdigitated digits. A method of fabricating a flame sensor for combustion flame temperature determination, comprises forming first and second photodiodes with elongated extending interdigitated digits.

摘要翻译： 用于燃烧火焰温度测定的火焰传感器包括细长延伸部，其相对于彼此以平行的叉指纵轴线定位。 光谱仪包括传感器，系统包括传感器。 一种用于燃烧火焰温度测定的方法包括通过使用包括具有细长延伸的叉指位的光电二极管的光电二极管器件来获得第一光电二极管信号和第二光电二极管信号。 一种制造用于燃烧火焰温度测定的火焰传感器的方法，包括：形成第一和第二光电二极管，其具有细长延伸的叉指位数。

公开(公告)号：US06765274B2

公开(公告)日：2004-07-20

申请号：US10602674

申请日：2003-06-25

申请人： Toshiyuki Honda

发明人： Toshiyuki Honda

IPC分类号： H01L2714

CPC分类号： G06K9/0002 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor element provided in a semiconductor device includes a built-in contact-type sensor having a sensor area formed on a circuit formation surface. Connection terminals are provided in an area other than the sensor area. A wiring board is connected to the connection terminals of the semiconductor element so that an end surface of the wiring board is positioned on the circuit formation surface. A protective resin part covers a part extending from the end surface of the wiring board to the circuit formation surface so as to protect a connection portion between the semiconductor element and the wiring board.

摘要翻译： 设置在半导体器件中的半导体元件包括具有形成在电路形成表面上的传感器区域的内置接触型传感器。 连接端子设置在传感器区域以外的区域。 布线基板与半导体元件的连接端子连接，使得布线基板的端面位于电路形成面上。 保护树脂部分覆盖从布线板的端面延伸到电路形成表面的部分，以保护半导体元件和布线板之间的连接部分。

公开(公告)号：US06756651B2

公开(公告)日：2004-06-29

申请号：US09963194

申请日：2001-09-26

申请人： Ferenc M. Bozso ,  Fenton Read McFeely ,  John Jacob Yurkas

发明人： Ferenc M. Bozso ,  Fenton Read McFeely ,  John Jacob Yurkas

IPC分类号： H01L2714

CPC分类号： H01L31/1085 ,  H01L31/1133

摘要： A novel photodetector CMOS-compatible photodetector is disclosed in which photo-generation of carriers (electrons) is carried out in the metal of the electrodes, rather than as electron-hole pairs in the semiconductor on which the metal electrodes are deposited. The novel photo detector comprises a silicon or other semiconductor substrate material characterized by an electron energy bandgap, and a pair of metal electrodes disposed upon a surface of the silicon to define therebetween a border area of the surface. One of the two electrodes being exposed to the incident radiation and covering an area of said surface which is larger than the aforesaid border area, the aforesaid metal of the electrodes being characterized by a Fermi level which is within said electron energy bandgap.

摘要翻译： 公开了一种新颖的光电检测器CMOS兼容光电检测器，其中在电极的金属中进行载流子（电子）的光生成，而不是沉积金属电极的半导体中的电子 - 空穴对。 新型光电检测器包括以电子能带隙为特征的硅或其它半导体衬底材料，以及设置在硅表面上的一对金属电极，以在其间界定表面的边界区域。 两个电极中的一个暴露于入射辐射并且覆盖所述表面的大于上述边界区域的区域，上述电极的金属的特征在于在所述电子能带隙内的费米能级。

公开(公告)号：US06753585B1

公开(公告)日：2004-06-22

申请号：US10313674

申请日：2002-12-05

申请人： Willem Johannes Kindt

发明人： Willem Johannes Kindt

IPC分类号： H01L2714

CPC分类号： H01L27/14603 ,  H01L27/14645

摘要： An improved vertical photo-detector cell is used in an imaging sensor. Sensor material associated with a given color in a vertical photo-detector cell is coupled to sensor material associated with the same color in an adjacent photo-detector cell such that photo-carriers from adjacent cells are combined. The coupled sensor materials result in an increased size sensor area for the given color. The increased sensor area associated with each pixel in the sensor results in increased sensitivity and improved fill factor for each color. In an imaging sensor array, the vertical photo-detector cells are arranged such that each color plane is arranged in a pattern. Each sensor in a pattern has a central portion and an extending portion. The central portion and the extending portion are each located about a geometrical center that is associated with a pixel in the array.

摘要翻译： 在成像传感器中使用改进的垂直光电检测器单元。 与垂直光电检测器单元中的给定颜色相关联的传感器材料耦合到在相邻光电检测器单元中与相同颜色相关联的传感器材料，使得来自相邻单元的光载流子被组合。 耦合的传感器材料导致给定颜色的传感器面积增加。 与传感器中的每个像素相关联的增加的传感器面积增加了每种颜色的灵敏度和改善的填充因子。 在成像传感器阵列中，垂直光电检测器单元布置成使得每个颜色平面以图案布置。 图案中的每个传感器具有中心部分和延伸部分。 中心部分和延伸部分各自位于与阵列中的像素相关联的几何中心周围。

公开(公告)号：US06724060B2

公开(公告)日：2004-04-20

申请号：US10278906

申请日：2002-10-24

申请人： Atsushi Maeda

发明人： Atsushi Maeda

IPC分类号： H01L2714

CPC分类号： H01L31/103 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14689

摘要： An N-type impurity diffusion region is formed in an element forming region surrounded by a field insulating film. In a region between an end portion of the N-type impurity diffusion region and an end portion of the field oxide film, a P-type impurity diffusion region is formed so as to contain an interface level present portion under a bird's beak portion. Thus, a PN junction is formed in a position distant from the interface level present portion. Therefore, even if a voltage is applied to the PN junction, a depletion layer will not reach the interface level present portion. Consequently, a semiconductor device, which suppresses an occurrence of a leakage current along the lower surface of an element isolation insulating film caused by the interface level present portion undesirably included in the depletion layer, as well as a manufacturing method of the same can be obtained.

摘要翻译： 在由场绝缘膜包围的元件形成区域中形成N型杂质扩散区域。 在N型杂质扩散区域的端部与场氧化膜的端部之间的区域中，形成P型杂质扩散区域，以便在鸟嘴部分下方容纳界面层。 因此，PN结形成在远离接口电平存在部分的位置。 因此，即使向PN结施加电压，耗尽层也不会到达界面层的存在部分。 因此，可以获得抑制由不希望包括在耗尽层中的界面层存在部分引起的沿着元件隔离绝缘膜的下表面的漏电流的发生的半导体器件及其制造方法 。

公开(公告)号：US06630670B2

公开(公告)日：2003-10-07

申请号：US09904199

申请日：2001-07-11

申请人： Richard Salisbury ,  Bruce Cairnduff

发明人： Richard Salisbury ,  Bruce Cairnduff

IPC分类号： H01L2714

CPC分类号： G01J5/04 ,  G01J5/0044 ,  G01J5/047 ,  G01J5/08 ,  G01J5/0834 ,  G01J2005/0077 ,  H04N5/23293 ,  H04N5/2353 ,  H04N5/33

摘要： A thermal imaging system comprising a camera (11), a control device (12) which is operable to control movement of the camera (11) and operation of the camera shutter and a computer (13) which includes thermal image processing software which allows manipulation or display of thermal images collected by the camera (11). The camera (11) is operated by use of the control device (12) to expose a thermal image over a selected time interval to correspondingly select a thermal image over a particular selected temperature range. The camera shutter is operated at a selected frequency, and exposure time of the image is varied to acquire thermal images over different selected temperature ranges. However, preferably every image is taken at the same time exposure, which allows display of a continuous real time display of thermal characteristics of the object over this selected temperature range. Thermal information over the other temperature range can also be displayed or used as desired.

摘要翻译： 一种热成像系统，包括相机（11），可操作以控制相机（11）的运动和相机快门的操作的控制装置（12）和包括允许操纵的热图像处理软件的计算机（13） 或显示由照相机（11）收集的热图像。 通过使用控制装置（12）操作照相机（11）以在所选择的时间间隔内暴露热图像，以相应地在特定的选定温度范围内选择热图像。 相机快门以选定的频率运行，并且图像的曝光时间会改变，以获取不同选定温度范围内的热像。 然而，优选地，每次图像都是同时曝光的，这允许在该选定的温度范围内显示物体的热特性的连续实时显示。 也可以根据需要显示或使用其他温度范围内的热信息。

公开(公告)号：US06548840B1

公开(公告)日：2003-04-15

申请号：US09542241

申请日：2000-04-03

申请人： Carl W. Pobanz ,  Mehran M. Matloubian

发明人： Carl W. Pobanz ,  Mehran M. Matloubian

IPC分类号： H01L2714

CPC分类号： H01L29/8605

摘要： A method and apparatus for substantially canceling the effects of temperature on the electrical performance of Field Effect Transistor (FET) integrated circuits (IC's) by exploiting a subtle feature of an epitaxial resistor implemented in an FET process. Specifically, the invention takes advantage of two constituent epitaxial resistor components having resistances that vary monotonically in opposite directions as functions of temperature. The invention includes a method for selecting the geometry of such an epitaxial resistor to give it either temperature invariance or a specific, useful functional temperature dependence.

摘要翻译： 通过利用在FET工艺中实现的外延电阻器的微妙特征，基本上消除了场效应晶体管（FET）集成电路（IC）的电气性能的影响的方法和装置。 具体地说，本发明利用具有作为温度函数的相反方向单调变化的电阻的两个构成的外延电阻器部件。 本发明包括一种用于选择这种外延电阻器的几何形状以提供温度不变性或特定的有用功能温度依赖性的方法。

公开(公告)号：US06545330B1

公开(公告)日：2003-04-08

申请号：US09614234

申请日：2000-07-12

申请人： Kerry Bernstein ,  Andres Bryant ,  Wayne J. Howell ,  William A. Klaasen ,  Wilbur D. Pricer ,  Anthony K. Stamper

发明人： Kerry Bernstein ,  Andres Bryant ,  Wayne J. Howell ,  William A. Klaasen ,  Wilbur D. Pricer ,  Anthony K. Stamper

IPC分类号： H01L2714

CPC分类号： H01L27/14683 ,  G01T1/244 ,  H01L27/14659 ,  H01L31/115 ,  H01L31/118

摘要： An IC chip comprising, a nearby or remote source capable of particle emissions; circuitry formed in the IC chip that is adversely affected by impacts of particle emissions from said source; and a particle detector formed in the IC chip between the circuitry and source for detecting said particle emissions. In one embodiment of the present invention, the source comprises a solder ball that is formed on a surface of the IC chip, and the solder ball is capable of emitting alpha-particles. The particle emissions detector of the present invention is a reverse biased Schottky diode. The IC chip is formed by (a) providing an IC chip having at least one layer of particle sensitive circuitry formed therein; (b) forming another layer having at least one particle sensor region situated therein on a surface of said IC chip; and (c) optionally, forming at least one particle emission source over said another layer.

公开(公告)号：US06531266B1

公开(公告)日：2003-03-11

申请号：US09808920

申请日：2001-03-16

申请人： Chih-Kung Chang ,  Kuang-Peng Lin ,  Yu-Kung Hsiao ,  Fu-Tien Weng ,  Bii-Junq Chang ,  Kuo-Liang Lu

发明人： Chih-Kung Chang ,  Kuang-Peng Lin ,  Yu-Kung Hsiao ,  Fu-Tien Weng ,  Bii-Junq Chang ,  Kuo-Liang Lu

IPC分类号： H01L2714

CPC分类号： B29D11/00365 ,  G02B3/0018 ,  H01L31/02162 ,  H01L31/02327

摘要： A process for reworking a non-reflowed, defective microlens element shape, of an image sensor device, without damage to an underlying spacer layer, or to underlying color filter elements, has been developed. The non-reflowed, microlens element shape, if defective and needing rework, is first subjected to a high energy exposure, converting the non-reflowed, microlens element shape to a acid type, microlens shape, then removed using a base type developer solution. Prior to formation of a reworked microlens element shape a baking cycle is employed to freeze, or render inactive, any organic residue still remaining on the surface of the spacer layer, after the base type developer removal procedure. Formation of the reworked, microlens element shape, followed by an anneal cycle, results in the desired rounded, microlens element, on the underlying spacer layer.

摘要翻译： 已经开发了一种用于重新制造图像传感器装置的未回流，有缺陷的微透镜元件形状的过程，而不损坏下面的间隔层或底层滤色器元件。 未回流的微透镜元件形状（如果有缺陷和需要返工）首先经受高能量曝光，将未回流的微透镜元件形状转换成酸型微透镜形状，然后使用碱式显影剂溶液除去。 在形成再加工的微透镜元件形状之前，在基底型显影剂移除程序之后，使用烘烤循环来冷冻或使无活性的任何残留在间隔层的表面上的有机残余物。 返工的微透镜元件形状的形成，随后是退火循环，在下面的间隔层上产生所需的圆形微透镜元件。

公开(公告)号：US06525352B1

公开(公告)日：2003-02-25

申请号：US09837362

申请日：2001-04-18

申请人： Lilac Muller ,  Bevan Staple

发明人： Lilac Muller ,  Bevan Staple

IPC分类号： H01L2714

CPC分类号： B81C1/00547

摘要： A method for fabricating a micromachined device with a fast release step is provided. A first undoped sacrificial layer is deposited on a structural layer. A doped sacrificial layer is deposited on the first undoped sacrificial layer. A second undoped sacrificial layer is deposited on the doped sacrificial layer to produce a layered structure. An etchant is then applied to the layered structure.

摘要翻译： 提供了一种用于制造具有快速释放步骤的微加工装置的方法。 第一未掺杂的牺牲层沉积在结构层上。 掺杂的牺牲层沉积在第一未掺杂的牺牲层上。 第二未掺杂的牺牲层沉积在掺杂牺牲层上以产生分层结构。 然后将蚀刻剂施加到分层结构。