公开(公告)号：US08492217B2

公开(公告)日：2013-07-23

申请号：US13237011

申请日：2011-09-20

申请人： Kai Frohberg ,  Dominik Olligs ,  Daniel Prochnow ,  Katrin Reiche

发明人： Kai Frohberg ,  Dominik Olligs ,  Daniel Prochnow ,  Katrin Reiche

IPC分类号： H01L21/8238

CPC分类号： H01L29/665 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76831 ,  H01L29/6659 ,  H01L29/7833

摘要： Disclosed herein are various methods of forming conductive contacts with reduced dimensions and various semiconductor devices incorporating such conductive contacts. In one example, one method disclosed herein includes forming a layer of insulating material above a semiconducting substrate, wherein the layer of material has a first thickness, forming a plurality of contact openings in the layer of material having the first thickness and forming an organic material in at least a portion of each of the contact openings. This illustrative method further includes the steps of, after forming the organic material, performing an etching process to reduce the first thickness of the layer of insulating material to a second thickness that is less than the first thickness, after performing the etching process, removing the organic material from the contact openings and forming a conductive contact in each of the contact openings.

摘要翻译： 本文公开了形成具有减小的尺寸的导电触点和结合这种导电触点的各种半导体器件的各种方法。 在一个示例中，本文公开的一种方法包括在半导体衬底上形成绝缘材料层，其中材料层具有第一厚度，在具有第一厚度的材料层中形成多个接触开口并形成有机材料 在每个接触开口的至少一部分中。 该说明性方法还包括以下步骤：在形成有机材料之后，进行蚀刻工艺，以在绝缘材料层的第一厚度减小至小于第一厚度的第二厚度之后，在进行蚀刻工艺之后， 来自接触开口的有机材料，并在每个接触开口中形成导电接触。

公开(公告)号：US20130072016A1

公开(公告)日：2013-03-21

申请号：US13237011

申请日：2011-09-20

申请人： Kai Frohberg ,  Dominik Olligs ,  Daniel Prochnow ,  Katrin Reiche

发明人： Kai Frohberg ,  Dominik Olligs ,  Daniel Prochnow ,  Katrin Reiche

IPC分类号： H01L21/28

CPC分类号： H01L29/665 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76831 ,  H01L29/6659 ,  H01L29/7833

摘要： Disclosed herein are various methods of forming conductive contacts with reduced dimensions and various semiconductor devices incorporating such conductive contacts. In one example, one method disclosed herein includes forming a layer of insulating material above a semiconducting substrate, wherein the layer of material has a first thickness, forming a plurality of contact openings in the layer of material having the first thickness and forming an organic material in at least a portion of each of the contact openings. This illustrative method further includes the steps of, after forming the organic material, performing an etching process to reduce the first thickness of the layer of insulating material to a second thickness that is less than the first thickness, after performing the etching process, removing the organic material from the contact openings and forming a conductive contact in each of the contact openings.

摘要翻译： 本文公开了形成具有减小的尺寸的导电触点和结合这种导电触点的各种半导体器件的各种方法。 在一个示例中，本文公开的一种方法包括在半导体衬底上形成绝缘材料层，其中材料层具有第一厚度，在具有第一厚度的材料层中形成多个接触开口并形成有机材料 在每个接触开口的至少一部分中。 该说明性方法还包括以下步骤：在形成有机材料之后，进行蚀刻工艺，以在绝缘材料层的第一厚度减小至小于第一厚度的第二厚度之后，在进行蚀刻工艺之后， 来自接触开口的有机材料，并在每个接触开口中形成导电接触。