公开(公告)号：US5929481A

公开(公告)日：1999-07-27

申请号：US964419

申请日：1997-11-04

申请人： Fwu-Iuan Hshieh ,  Brian H. Floyd ,  Mike F. Chang ,  Danny Nim ,  Daniel Ng

发明人： Fwu-Iuan Hshieh ,  Brian H. Floyd ,  Mike F. Chang ,  Danny Nim ,  Daniel Ng

IPC分类号： H01L21/336 ,  H01L29/08 ,  H01L29/10 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L29/1095 ,  H01L29/0878 ,  H01L29/7813

摘要： A trenched DMOS transistor overcomes the problem of a parasitic JFET at the trench bottom (caused by deep body regions extending deeper than the trench) by providing a doped trench bottom implant region at the bottom of the trench and extending into the surrounding drift region. This trench bottom implant region has the same doping type, but is more highly doped, than the surrounding drift region. The trench bottom implant region significantly reduces the parasitic JFET resistance by optimizing the trench bottom implant dose, without creating reliability problems.

摘要翻译： 沟槽DMOS晶体管通过在沟槽的底部提供掺杂的沟槽底部注入区域并延伸到周围的漂移区域来克服沟槽底部的寄生JFET（由深沟槽深度延伸的深度）引起的问题。 该沟槽底部注入区域具有与周围漂移区域相同的掺杂类型，但是掺杂度更高。 通过优化沟槽底部注入剂量，沟槽底部注入区域显着降低寄生JFET电阻，而不会产生可靠性问题。