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    Fabrication of an invertedly poled domain structure from a ferroelectric crystal
    1.
    发明授权
    Fabrication of an invertedly poled domain structure from a ferroelectric crystal 失效
    从铁电晶体制造反极化畴结构

    公开(公告)号：US06597492B1

    公开(公告)日：2003-07-22

    申请号：US09367308

    申请日：2000-04-28

    Applicant: Gil Rosenman ,  Alexander Skliar ,  Moshe Oron ,  David Eger ,  Mordechai Katz

    Inventor： Gil Rosenman ,  Alexander Skliar ,  Moshe Oron ,  David Eger ,  Mordechai Katz

    IPC: G02F135

    CPC classification number: G02F1/3558 ,  C30B29/14 ,  C30B29/30 ,  C30B30/00 ,  C30B30/02

    Abstract: A method of fabricating an invertedly poled domain structure having alternating sections of opposite electric polarities, from a ferroelectric crystal wafer (1) having two opposite polar surfaces, comprises patterning at least one of the two polar surfaces of the wafer to comprise a plurality of alternating discrete regions, of which first regions are adapted for and second regions are protected from the direct application thereto of an electric contact; applying to both polar surfaces of the wafer electrically conducting electrodes (10 and 11) so that the first regions are in direct contact with the electrodes and the second regions are protected from such a contact; and applying to the electrodes an electrical field (20) of the intensity E. The electrical field is applied to the wafer at a working temperature by heater/cooler (15).

    Abstract translation: 一种制造具有相反电极性交替部分的反极化畴结构的方法，其特征在于，具有两个相反的极性表面的铁电晶体晶片（1），包括将所述晶片的两个极性表面中的至少一个构成图案，以包括多个交替 离开区域，其中第一区域适于和第二区域被保护免受电接触的直接应用; 施加到晶片导电电极（10和11）的两个极性表面，使得第一区域与电极直接接触，并且第二区域被保护免受这种接触; 以及向电极施加强度为E的电场（20）。电场通过加热器/冷却器（15）在工作温度下施加到晶片。

    OPTICAL WAVEGUIDE FABRICATION
    3.
    发明申请
    OPTICAL WAVEGUIDE FABRICATION 有权
    光波导制造

    公开(公告)号：US20130209047A1

    公开(公告)日：2013-08-15

    申请号：US13643552

    申请日：2011-04-26

    Applicant: Gil Atar ,  Ariel Bruner ,  David Eger ,  Bruno Sfez

    Inventor： Gil Atar ,  Ariel Bruner ,  David Eger ,  Bruno Sfez

    IPC: G02B6/13

    CPC classification number: G02B6/13 ,  G02B6/136 ,  H01S3/063 ,  H01S3/1618 ,  H01S3/176

    Abstract: An optical device including an active core layer of silica glass doped with ions which serve as optical emitters, the active core layer being on a silica glass substrate and having a layer thickness of at least 5 μm, and wherein the layer is sintered at a temperature range of 1500-1600 C and subsequently heat treated by a laser.

    Abstract translation: 一种光学器件，包括掺杂有用作光发射体的离子的二氧化硅玻璃的活性核心层，所述活性核心层在石英玻璃衬底上，层厚度至少为5μm，并且其中所述层在温度 范围为1500-1600℃，随后用激光热处理。

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