公开(公告)号：US5112775A

公开(公告)日：1992-05-12

申请号：US609792

申请日：1990-11-07

申请人： Masamori Iida ,  Tateki Kurosu ,  Ken Okano

发明人： Masamori Iida ,  Tateki Kurosu ,  Ken Okano

IPC分类号： C30B29/04 ,  H01L21/04 ,  H01L21/205

CPC分类号： H01L29/6603 ,  H01L21/0237 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/0262 ,  Y10S148/122 ,  Y10S252/95 ,  Y10S252/951

摘要： A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with diphosphorus pentoxide (P.sub.2 O.sub.5) dissolved therein, and subjecting the resultant gas to a hot filament CVD method.

摘要翻译： 金刚石n型半导体，其包括基板和设置在基板上的磷元素掺杂金刚石薄膜。 通过将包含液体有机化合物作为金刚石材料的溶液与五氧化二磷（P 2 O 5）溶解在其中，并使所得气体经受热丝CVD法沉积金刚石薄膜。

公开(公告)号：US4798764A

公开(公告)日：1989-01-17

申请号：US502262

申请日：1983-06-08

申请人： Richard E. Tressler ,  Herman J. Boeglin

发明人： Richard E. Tressler ,  Herman J. Boeglin

IPC分类号： C01G28/02 ,  H01L21/22 ,  H01L21/223 ,  B05D3/02 ,  B32B19/00 ,  B32B19/04

CPC分类号： H01L21/2225 ,  Y10S252/95 ,  Y10T428/249969 ,  Y10T428/24997

摘要： New arsenate compounds, compositions and solid diffusion sources for the arsenic doping of semiconductors are disclosed which comprise substances composed of a sintered arsenate that decomposes upon heating at temperatures between 500.degree.-1400.degree. C. to release As.sub.2 O.sub.5, As.sub.2 O.sub.3 and/or elemental arsenic vapors for transport to semiconductor elements as a controlled dopant.

摘要翻译： 公开了用于半导体砷掺杂的新的砷酸盐化合物，组合物和固体扩散源，其包括由在烧结的砷酸盐中组成的物质，其在500-140℃的温度下加热分解以释放As 2 O 5，As 2 O 3和/或元素的砷蒸汽 用于作为受控掺杂剂输送到半导体元件。

公开(公告)号：US4317680A

公开(公告)日：1982-03-02

申请号：US202552

申请日：1980-10-31

申请人： Chang K. Chu ,  George W. Vomish

发明人： Chang K. Chu ,  George W. Vomish

IPC分类号： H01L21/223 ,  C30B31/16 ,  H01L21/22 ,  C22C28/00

CPC分类号： C30B31/165 ,  H01L21/2225 ,  Y10S252/95 ,  Y10S420/903

摘要： The present invention is directed to a diffusion source for establishing a p-type conductivity region in a semiconductor device and to a method for preparing such diffusion source. The diffusion source consists of pure silicon powder diffused with a p-type impurity.

摘要翻译： 本发明涉及用于在半导体器件中建立p型导电区域的扩散源和用于制备这种扩散源的方法。 扩散源由纯硅粉末与p型杂质扩散组成。

公开(公告)号：US4190458A

公开(公告)日：1980-02-26

申请号：US890810

申请日：1978-03-27

申请人： Raymond DiBugnara

发明人： Raymond DiBugnara

IPC分类号： C30B31/02 ,  H01L21/22 ,  H01L29/167 ,  C09K3/00

CPC分类号： H01L21/2225 ,  C30B31/02 ,  H01L29/167 ,  Y10S252/95

摘要： An improved method for forming a metal-silica coating solution having particular utility in the formation of metal-organo-silicate films on semiconductor surfaces is disclosed. The method comprises the steps of forming a mixture of a first solution having a metal salt and a cross-linking agent dissolved therein and a second solution having an organo-silicate dissolved therein, and aging the mixture a predetermined length of time. This mixture can then be applied to the semiconductor surface where cross-linking takes place such that a viable film is formed. Further heating of the semi-conductor device causes a metal film to be formed which is in turn diffused into the semiconductor device. By the use of the metal-silica solution, an improved method for diffusing metal atoms into silicon for lifetime control is achieved.

摘要翻译： 公开了一种用于形成在半导体表面上形成金属 - 有机硅酸盐膜的特殊用途的金属 - 二氧化硅涂层溶液的改进方法。 该方法包括以下步骤：形成具有金属盐和溶解于其中的交联剂的第一溶液和溶解有有机硅酸盐的第二溶液的混合物，并将混合物老化预定的时间。 然后可以将该混合物施加到半导体表面，其中进行交联，从而形成活性薄膜。 半导体器件的进一步加热导致形成金属膜，该金属膜又扩散到半导体器件中。 通过使用金属二氧化硅溶液，实现了将金属原子扩散到硅中以进行寿命控制的改进方法。

公开(公告)号：US4175988A

公开(公告)日：1979-11-27

申请号：US933294

申请日：1978-08-14

申请人： James E. Rapp

发明人： James E. Rapp

IPC分类号： C03C3/17 ,  C03C10/00 ,  C30B31/02 ,  C30B31/08 ,  H01L21/22 ,  H01L21/223

CPC分类号： C30B31/08 ,  C03C10/00 ,  C03C3/17 ,  C30B31/02 ,  H01L21/2225 ,  Y10S252/95 ,  Y10S252/951

摘要： Disclosed are new polycrystalline ceramic bodies formed from melts containing as essential components P.sub.2 O.sub.5, Ta.sub.2 O.sub.3 and Al.sub.2 O.sub.3 and sometimes containing small amounts of SiO.sub.2. Also disclosed are such bodies in the form of planar dopant hosts for doping silicon or germanium with phosphorus. Methods of making both products are disclosed as well as how to use the dopant hosts in a doping process.

公开(公告)号：US4152286A

公开(公告)日：1979-05-01

申请号：US832857

申请日：1977-09-13

申请人： Carol A. Crosson ,  Terry L. Brewer ,  Robert F. Aycock

发明人： Carol A. Crosson ,  Terry L. Brewer ,  Robert F. Aycock

IPC分类号： H01L21/22 ,  H01L7/44

CPC分类号： H01L21/2225 ,  Y10S252/95

摘要： A boron doped, silicon oxide-forming film is produced on a semiconductor wafer by coating the wafer with a solution of a silicon compound and a boron compound, in a blend of two polar organic solvents, one of which has a low boiling point, and the other has a high boiling point, between 185.degree. and 300.degree. C. During a subsequent heating step, the high boiling point solvent redissolves any crystalline precipitate that forms during spin-on, giving a more uniform film for diffusion, and consequently a damage-free wafer surface.

公开(公告)号：US4129463A

公开(公告)日：1978-12-12

申请号：US811348

申请日：1977-06-29

申请人： John W. Cleland ,  Russell D. Westbrook ,  Richard F. Wood ,  Rosa T. Young

发明人： John W. Cleland ,  Russell D. Westbrook ,  Richard F. Wood ,  Rosa T. Young

IPC分类号： H01L21/261 ,  H01L29/04 ,  H01L31/0368 ,  B05D3/06 ,  H01L27/14

CPC分类号： H01L31/03682 ,  H01L21/261 ,  H01L29/04 ,  Y02E10/546 ,  Y10S148/165 ,  Y10S252/95

摘要： A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

摘要翻译： 一种NTD半导体材料，其包含平均晶粒尺寸小于1000微米的多晶硅，并且含有均匀分布在整个硅而不是在晶界处的磷。

公开(公告)号：US3954525A

公开(公告)日：1976-05-04

申请号：US529656

申请日：1974-12-04

申请人： Thomas A. Myles ,  Curtis E. Zimmer

发明人： Thomas A. Myles ,  Curtis E. Zimmer

IPC分类号： C04B35/447 ,  C04B35/645 ,  C30B31/16 ,  H01L21/22 ,  H01L21/223 ,  H01L7/44

CPC分类号： H01L21/2225 ,  C04B35/447 ,  C04B35/645 ,  C30B31/165 ,  H01L21/223 ,  Y10S252/95 ,  Y10S252/951

摘要： Solid diffusion sources for phosphorus doping comprise from 10 to 95 percent SiP.sub.2 O.sub.7 with an inert phase of ZrP.sub.2 O.sub.7. Such materials may be hot-pressed to obtain diffusion source wafers of the appropriate dimensions and porosity. A preferred composition comprises from 25 to 75 weight percent SiP.sub.2 O.sub.7, the balance ZrP.sub.2 O.sub.7. Fabrication parameters range from about 750 psi to about 6,000 psi pressure during hot-pressing, at temperatures from about 800.degree.C to about 1450.degree.C.

摘要翻译： 用于磷掺杂的固体扩散源包含10至95％的具有惰性相ZrP 2 O 7的SiP 2 O 7。 这样的材料可以被热压以获得具有适当尺寸和孔隙率的扩散源晶片。 优选的组合物包含25至75重量％的SiP 2 O 7，余量为ZrP 2 O 7。 制热参数的范围从热压时的约750psi至约6000psi的压力，在约800℃至约1450℃的温度下。

公开(公告)号：US3935039A

公开(公告)日：1976-01-27

申请号：US457649

申请日：1974-04-03

申请人： Tatsuro Beppu ,  Masami Iwamoto ,  Tetsuo Sekiwa

发明人： Tatsuro Beppu ,  Masami Iwamoto ,  Tetsuo Sekiwa

IPC分类号： H01L21/208 ,  H01L33/30 ,  H01L7/38

CPC分类号： H01L33/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02628 ,  Y10S252/95

摘要： A method of manufacturing a green light-emitting gallium phosphide device which comprises the steps of preparing a liquid-phase epitaxial solution of one conductivity type containing a high concentration of nitrogen at a higher temperature than 1000.degree.C; bringing said epitaxial growth solution now cooled to 600.degree.C to 1000.degree.C into contact with a gallium phosphide substrate of the same conductivity type as said solution; cooling said epitaxial growth solution to form a liquid-phase epitaxial layer on said substrate; and forming a region in close proximity to said liquid-phase epitaxial layer with the opposite conductivity type thereto.

摘要翻译： 一种制造绿色发光磷化镓器件的方法，包括以下步骤：在高于1000℃的温度下制备含有高浓度氮的一种导电类型的液相外延溶液; 使所述外延生长溶液现在冷却至600℃至1000℃与与所述溶液具有相同导电类型的磷化镓基底接触; 冷却所述外延生长溶液以在所述衬底上形成液相外延层; 并且以与其相反的导电类型形成紧邻所述液相外延层的区域。

公开(公告)号：US3923563A

公开(公告)日：1975-12-02

申请号：US35134873

申请日：1973-04-16

申请人： OWENS ILLINOIS INC

发明人： VENKATU DOULATABAD A

IPC分类号： C30B31/16 ,  H01L21/22 ,  H01L21/223

CPC分类号： C30B31/165 ,  H01L21/2225 ,  H01L21/223 ,  Y10S252/95 ,  Y10S252/951

摘要： Disclosed is a method for diffusion doping of silicon semiconductors by the vapor phase transport of an N-type dopant such as phosphorus oxide, antimony oxide, or arsenic oxide to the silicon semiconductor, wherein the dopant source comprises a porous, inert, rigid, dimensionally stable, refractory support impregnated with a dopant component for such N-type dopants such as aluminum metaphosphate, antimony oxide or arsenic oxide.

摘要翻译： 本发明公开了一种通过N型掺杂剂如磷氧化物，氧化锑或砷氧化物的气相传输将硅半导体扩散掺杂到硅半导体中的方法，其中掺杂剂源包括多孔，惰性，刚性的尺寸 浸渍有用于这种N型掺杂剂如偏磷酸铝，氧化锑或氧化砷的掺杂剂组分的稳定的耐火载体。