公开(公告)号：US06822379B2

公开(公告)日：2004-11-23

申请号：US10262808

申请日：2002-10-01

Applicant: Paul H. McClelland ,  David L. Neiman ,  Steven Leith ,  Niranjan Thirukkovalur

Inventor： Paul H. McClelland ,  David L. Neiman ,  Steven Leith ,  Niranjan Thirukkovalur

IPC: H01J102

CPC classification number: H01J1/312 ,  B82Y10/00 ,  G11B9/10 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30426

Abstract: An emission device includes a plurality of electron emitter structures of varied geometry that have a conducting layer deposited thereon. The conducting layer has openings located at tunneling sites for each of the electron emitter structures. The tunneling sites facilitate electron emissions from each of the varied geometry electron emitter structures upon voltage biasing of the conducting layer relative to the electron emitter structures.

Abstract translation: 发射装置包括具有沉积在其上的导电层的多种几何形状的电子发射体结构。 导电层具有位于每个电子发射器结构的隧道位置处的开口。 隧道位置有助于在导电层相对于电子发射体结构的电压偏置时来自各种不同的几何形状的电子发射体结构的电子发射。