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公开(公告)号:US09117523B1
公开(公告)日:2015-08-25
申请号:US13649989
申请日:2012-10-11
CPC分类号: G11C19/0841 , G11C11/161 , G11C11/1675 , G11C19/08 , G11C19/0808 , G11C2213/71
摘要: A nonvolatile alternative to DRAM or Flash is disclosed. It involves a new “magnetic shift register” that avoids the bit annihilation problem that plagues magnetic racetrack memories. Using this new “chainlink memory” approach, one avoids the annihilation problem inherent in racetrack memory by breaking up the racetrack into magnetically coupled links, where each link preferably handles one bit exclusively. Depending upon the implementation, the “bit” can be, for example, the magnetization of a link, presence or absence of a domain wall, or the polarity of a domain wall. Numerous examples and applications of this new chainlink technology are disclosed.
摘要翻译: 公开了DRAM或闪存的非易失性替代方案。 它涉及一个新的“磁移位寄存器”,避免了磁场赛马记忆的湮灭问题。 使用这种新的“链式记忆”方法,通过将跑道分解成磁耦合链路,避免了赛道内存中固有的湮灭问题,其中每个链路优选地仅处理一个比特。 根据实施方式,“位”可以是例如链路的磁化,域壁的存在或不存在或域壁的极性。 披露了这种新型链链技术的许多实例和应用。