公开(公告)号：US20230305753A1

公开(公告)日：2023-09-28

申请号：US18309038

申请日：2023-04-28

Applicant: KIOXIA CORPORATION

Inventor： Yuta AIBA ,  Naomi TAKEDA ,  Masanobu SHIRAKAWA

IPC: G06F3/06 ,  G11C19/08

CPC classification number: G06F3/0659 ,  G06F3/0608 ,  G06F3/0679 ,  G11C19/0841

Abstract: According to one embodiment, a memory system includes a shift register memory and a controller. The shift register memory includes data storing shift strings. The controller changes a shift pulse, which is to be applied to the data storing shift strings from which first data is read by applying a first shift pulse, to a second shift pulse to write second data to the data storing shift strings and to read the second data from the data storing shift strings. The controller creates likelihood information of data read from the data storing shift strings in accordance with a read result of the second data. The controller performs soft decision decoding for the first data using the likelihood information.

公开(公告)号：US20190088346A1

公开(公告)日：2019-03-21

申请号：US15919710

申请日：2018-03-13

Applicant: Toshiba Memory Corporation

Inventor： Yasuaki Ootera ,  Tsuyoshi Kondo ,  Nobuyuki Umetsu ,  Michael Arnaud Quinsat ,  Takuya Shimada ,  Masaki Kado ,  Susumu Hashimoto ,  Shiho Nakamura ,  Hideaki Aochi ,  Tomoya Sanuki ,  Shinji Miyano ,  Yoshihiro Ueda ,  Yuichi Ito ,  Yasuhito Yoshimizu

IPC: G11C19/08 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22

CPC classification number: G11C19/0841 ,  G11C19/28 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic portion, a first magnetic layer, a first nonmagnetic layer, a second magnetic portion, a second magnetic layer, a second nonmagnetic layer, a first electrode, and a second electrode. The first magnetic portion includes a first magnetic part and a second magnetic part. The first nonmagnetic layer is provided between the first magnetic layer and the first magnetic part. The second magnetic portion includes a third magnetic part and a fourth magnetic part. The second nonmagnetic layer is provided between the second magnetic layer and the third magnetic part. The first electrode electrically is connected to the second magnetic part and the fourth magnetic part. The second electrode is electrically connected to the first magnetic part and the third magnetic part.

公开(公告)号：US09779835B1

公开(公告)日：2017-10-03

申请号：US15438856

申请日：2017-02-22

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Michael Arnaud Quinsat ,  Takuya Shimada ,  Hirofumi Morise ,  Masaki Kado ,  Yasuaki Ootera ,  Tsuyoshi Kondo ,  Shiho Nakamura

IPC: G11C19/08 ,  H01L43/02

CPC classification number: G11C19/0841 ,  H01L43/02 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory device includes an element unit and a controller. The element unit includes a magnetic member, a first magnetic layer, a second magnetic layer, an intermediate layer, and a non-magnetic layer. The magnetic member includes a first region, a first portion, and a second portion. The first region is provided between the first portion and the second portion, or included in the first portion. The first magnetic layer is apart from the first region in a first direction. The second magnetic layer is provided between the first region and the first magnetic layer. The intermediate layer is provided between the first magnetic layer and the second magnetic layer. The intermediate layer is non-magnetic. The non-magnetic layer is connected with the first region. The controller is configured to supply a writing current and a shift current to the element unit.

公开(公告)号：US09741418B2

公开(公告)日：2017-08-22

申请号：US15333235

申请日：2016-10-25

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yarong Fu ,  Junfeng Zhao ,  Yuangang Wang ,  Wei Yang ,  Yinyin Lin ,  Kai Yang

IPC: G11C5/02 ,  G11C19/08 ,  G11C11/16 ,  G11B5/65 ,  G11B5/012

CPC classification number: G11C11/1675 ,  G11B5/012 ,  G11B5/653 ,  G11B5/656 ,  G11C11/16 ,  G11C19/0841

Abstract: A write apparatus and a magnetic memory, where the write apparatus includes a first drive port, a second drive port, a first information storage area, a second information storage area, and an information buffer. A first area locates between the first information storage area and the information buffer. A second area locates between the second information storage area and the information buffer. The first information storage area, the second information storage area, and the information buffer are made of a first magnetic material. The first area and the second area are made of a second magnetic material. Magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material. The write apparatus can ensure write stability of the magnetic memory.

公开(公告)号：US20170229640A1

公开(公告)日：2017-08-10

申请号：US15267418

申请日：2016-09-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Masaki KADO ,  Tsuyoshi KONDO ,  Hirofumi MORISE ,  Yasuaki OOTERA ,  Takuya SHIMADA ,  Michael Arnaud Quinsat ,  Shiho NAKAMURA

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

CPC classification number: G11C11/1675 ,  G11C19/0841

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic body and a second magnetic body. The first magnetic body extends in a first direction. The second magnetic body extends in the first direction. A distance between the second magnetic body and the first magnetic body changes periodically along the first direction.

公开(公告)号：US20170178748A1

公开(公告)日：2017-06-22

申请号：US15447096

申请日：2017-03-01

Applicant: RIKEN

Inventor： Naoto NAGAOSA ,  Wataru KOSHIBAE ,  Junichi IWASAKI ,  Masashi KAWASAKI ,  Yoshinori TOKURA ,  Yoshio KANEKO

IPC: G11C19/08

CPC classification number: G11C19/0866 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/08 ,  G11C19/0808 ,  G11C19/0841 ,  G11C19/085 ,  H01L27/105 ,  H01L29/82 ,  H01L41/08

Abstract: A magnetic element capable of generating and erasing a skyrmion, including a magnet shaped as a thin layer and including a structure surrounded by a nonmagnetic material; a current path provided surrounding an end region including an end portion of the magnet, on one surface of the magnet; and a skyrmion sensor that detects the generation and erasing of the skyrmion. With Wm being width of the magnet and hm being height of the magnet, a size of the magnet, with the skyrmion of a diameter λ being generated, is such that 2λ>Wm>λ/2 and 2λ>hm>λ/2. With W being width of the end region in a direction parallel to the end portion of the magnet and h being height of the end region in a direction perpendicular to the end portion of the magnet, the end region is such that λ≧W>λ/4 and 2λ>h>λ/2.

公开(公告)号：US20170133074A1

公开(公告)日：2017-05-11

申请号：US15406209

申请日：2017-01-13

Applicant: Huawei Technologies Co., Ltd.

Inventor： Kai Yang ,  Junfeng Zhao ,  Yuangang Wang ,  Wei Yang ,  Yinyin Lin ,  Yarong Fu

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607 ,  G11C19/0808 ,  G11C19/0841 ,  G11C19/0866

Abstract: A magnetic storage apparatus is disclosed, and is configured to access data. The magnetic storage apparatus includes a magnetic storage track, a first write apparatus, a second write apparatus, and a drive apparatus. The first write apparatus and the second write apparatus are located at different positions on the magnetic storage track. The first write apparatus is configured to write first data “0” or second data “1”. The second write apparatus is configured to write third data “2” and fourth data “3”.

公开(公告)号：US20160276404A1

公开(公告)日：2016-09-22

申请号：US15053461

申请日：2016-02-25

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shiho NAKAMURA ,  Michael Arnaud QUINSAT ,  Tsuyoshi KONDO

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L27/222 ,  G11C19/0841 ,  H01L43/10

Abstract: A magnetic memory device according to an embodiment includes a first magnetic section, a read section, and a write section. The first magnetic section includes an extending portion. The extending portion extends in a first direction. The extending portion has a first interface and a second interface. The extending portion includes magnetic domains arranged along the first direction. Magnetization easy axis of the extending portion is directed along a second direction. The extending portion includes a first region and a second region. The first region contains at least one first element selected from a first group consisting of gadolinium, terbium, dysprosium, neodymium, and holmium. The second region contains at least one second element selected from a second group consisting of iron, cobalt, nickel, boron, silicon, and phosphorus. Concentration of the first element in the second region is lower than concentration of the first element in the first region.

Abstract translation: 根据实施例的磁存储器件包括第一磁性部分，读取部分和写入部分。 第一磁性部分包括延伸部分。 延伸部分沿第一方向延伸。 延伸部具有第一界面和第二界面。 延伸部分包括沿第一方向布置的磁畴。 延伸部分的易磁化轴线沿着第二方向被引导。 延伸部分包括第一区域和第二区域。 第一区域包含至少一种选自由钆，铽，镝，钕和钬组成的第一组的第一元素。 第二区域包含至少一个选自铁，钴，镍，硼，硅和磷的第二组中的第二元素。 第二区域中的第一元素的浓度低于第一区域中的第一元素的浓度。

公开(公告)号：US20160203835A1

公开(公告)日：2016-07-14

申请号：US15078594

申请日：2016-03-23

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yinyin Lin ,  Yarong Fu ,  Kai Yang ,  Wei Yang ,  Yuangang Wang ,  Junfeng Zhao

IPC: G11B5/09

CPC classification number: G11B5/09 ,  G11B5/02 ,  G11B2005/0002 ,  G11C11/02 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C19/0808 ,  G11C19/0841

Abstract: An information storage apparatus includes a magnetic track, a writer, and a reader, where the magnetic track includes a number of magnetic domains. Each magnetic domain is divided into at least two magnetic regions, and the writer is disposed on the magnetic track, and configured to write information to the at least two magnetic regions of each magnetic domain. The reader, disposed on the magnetic track, is configured to read the written information from the at least two magnetic regions. Therefore, multiple pieces of valid information are written to one magnetic domain of the magnetic track, thereby increasing storage density of the magnetic track, and expanding a storage capacity of the storage apparatus.

Abstract translation: 信息存储装置包括磁道，写入器和读取器，其中磁道包括多个磁畴。 每个磁畴被分成至少两个磁性区域，并且写入器设置在磁道上，并被配置为将信息写入每个磁畴的至少两个磁性区域。 设置在磁道上的读取器被配置为从至少两个磁性区域读取写入的信息。 因此，将多条有效信息写入磁道的一个磁畴，从而增加磁道的存储密度，并扩大存储装置的存储容量。

公开(公告)号：US09379312B2

公开(公告)日：2016-06-28

申请号：US13518974

申请日：2010-12-14

Applicant: Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

Inventor： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

IPC: H01L29/82 ,  H01L43/02 ,  B82Y25/00 ,  G11C11/14 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  G11C19/08 ,  H01L27/22

CPC classification number: H01L43/02 ,  B82Y25/00 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841 ,  G11C2213/74 ,  G11C2213/79 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

Abstract translation: 本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。 畴壁运动层由具有垂直磁各向异性的铁磁材料制成。 间隔层形成在畴壁运动层上，由非磁性材料制成。 参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。 畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。 畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值 。