公开(公告)号：US20100308303A1

公开(公告)日：2010-12-09

申请号：US12478084

申请日：2009-06-04

申请人： Yia-Chung Chang ,  David M.T. Kuo

发明人： Yia-Chung Chang ,  David M.T. Kuo

IPC分类号： H01L29/66 ,  H01L21/02

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/122 ,  H01L29/127 ,  H01L29/42324 ,  H01L29/66977 ,  H01L29/7888 ,  Y10S438/962

摘要： A method of making a quantum dot memory cell, the quantum dot memory cell including an array of quantum dots disposed between a first electrode and a second electrode, includes obtaining values for a tunneling current through the quantum dot memory cell as a function of a voltage applied to the quantum dot memory cell and selecting parameters of the quantum dot memory cell such that the tunneling current through the quantum dot memory cell exhibits a bistable current for at least some values of the voltage applied to the quantum dot memory cell. The values for the tunneling current are determined on the basis of a density of states of the array of quantum dots.

摘要翻译： 一种制造量子点存储单元的方法，包括设置在第一电极和第二电极之间的量子点阵列的量子点存储单元包括获得通过量子点存储单元的隧穿电流的值作为电压的函数 施加到量子点存储单元并且选择量子点存储单元的参数，使得通过量子点存储单元的隧穿电流对施加到量子点存储单元的电压的至少一些值呈现双稳态电流。 基于量子点阵列的状态密度来确定隧穿电流的值。