Lithographic processing optimization based on hypersampled correlations
    1.
    发明授权
    Lithographic processing optimization based on hypersampled correlations 有权
    基于超采样相关的平滑处理优化

    公开(公告)号:US07198873B2

    公开(公告)日:2007-04-03

    申请号:US10715109

    申请日:2003-11-18

    CPC classification number: G03F7/70625 G03F7/70425

    Abstract: A method of optimizing lithographic processing to achieve substrate uniformity, is presented herein. In one embodiment, The method includes deriving hyper-sampled correlation information indicative of photoresist behavior for a plurality of wafer substrates processed at pre-specified target processing conditions. The derivation includes micro-exposing subfields of the substrates with a pattern, processing the substrates at the various target conditions, determining photoresist-related characteristics of the subfields (e.g., Bossung curvatures), and extracting correlation information regarding the subfield characteristics and the different target processing conditions to relate the target conditions as a function of subfield characteristics. The method then detects non-uniformities in a micro-exposed subsequent substrate-processed under production-level processing conditions and exploits the correlation information to adjust the production-level conditions and achieve uniformity across the substrate.

    Abstract translation: 本文给出了优化平版印刷加工以实现基板均匀性的方法。 在一个实施例中,该方法包括导出指示在预定目标处理条件下处理的多个晶片衬底的光致抗蚀剂行为的超采样相关信息。 衍生包括具有图案的基板的微曝光子场,在各种目标条件下处理基板,确定子场的光致抗蚀剂相关特性(例如,Bossung曲率),以及提取关于子场特性和不同目标的相关信息 处理条件将目标条件作为子场特征的函数进行关联。 然后,该方法在生产级处理条件下的微曝光后续衬底处理中检测不均匀性,并利用相关信息来调整生产水平条件并实现衬底上的均匀性。

    Lithographic processing optimization based on hypersampled correlations
    2.
    发明授权
    Lithographic processing optimization based on hypersampled correlations 有权
    基于超采样相关的平滑处理优化

    公开(公告)号:US08120748B2

    公开(公告)日:2012-02-21

    申请号:US11709188

    申请日:2007-02-22

    CPC classification number: G03F7/70625 G03F7/70425

    Abstract: A method of optimizing lithographic processing to achieve substrate uniformity, is presented herein. In one embodiment, The method includes deriving hyper-sampled correlation information indicative of photoresist behavior for a plurality of wafer substrates processed at pre-specified target processing conditions. The derivation includes micro-exposing subfields of the substrates with a pattern, processing the substrates at the various target conditions, determining photoresist-related characteristics of the subfields (e.g., Bossung curvatures), and extracting correlation information regarding the subfield characteristics and the different target processing conditions to relate the target conditions as a function of subfield characteristics. The method then detects non-uniformities in a micro-exposed subsequent substrate processed under production-level processing conditions and exploits the correlation information to adjust the production-level conditions and achieve uniformity across the substrate.

    Abstract translation: 本文给出了优化平版印刷加工以实现基板均匀性的方法。 在一个实施例中,该方法包括导出指示在预定目标处理条件下处理的多个晶片衬底的光致抗蚀剂行为的超采样相关信息。 该衍生包括具有图案的基板的微曝光子场,在各种目标条件下处理基板,确定子场的光致抗蚀剂相关特性(例如,Bossung曲率),以及提取关于子场特性和不同目标的相关信息 处理条件将目标条件作为子场特征的函数进行关联。 然后,该方法检测在生产级处理条件下处理的微暴露的随后的衬底中的不均匀性,并利用相关信息来调整生产水平条件并实现衬底上的均匀性。

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