公开(公告)号：US20230197817A1

公开(公告)日：2023-06-22

申请号：US17558231

申请日：2021-12-21

申请人： Debaleena NANDI ,  Cory BOMBERGER ,  Diane LANCASTER ,  Gilbert DEWEY ,  Sandeep K. PATIL ,  Mauro J. KOBRINSKY ,  Anand S. MURTHY ,  Tahir GHANI

发明人： Debaleena NANDI ,  Cory BOMBERGER ,  Diane LANCASTER ,  Gilbert DEWEY ,  Sandeep K. PATIL ,  Mauro J. KOBRINSKY ,  Anand S. MURTHY ,  Tahir GHANI

IPC分类号： H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/45 ,  H01L29/161

CPC分类号： H01L29/42392 ,  H01L29/78696 ,  H01L29/0673 ,  H01L29/458 ,  H01L29/161

摘要： Gate-all-around integrated circuit structures having confined epitaxial source or drain structures, are described. For example, an integrated circuit structure includes a plurality of nanowires above a sub-fin. A gate stack is over the plurality of nanowires and the sub-fin. Epitaxial source or drain structures are on opposite ends of the plurality of nanowires. The epitaxial source or drain structures comprise i) a first PMOS epitaxial (pEPI) region of germanium and boron, ii) a second pEPI region of silicon, germanium and boron on the first pEPI region at a contact location, iii) titanium silicide conductive contact material on the second pEPI region.