公开(公告)号：US06258497B1

公开(公告)日：2001-07-10

申请号：US08448955

申请日：1995-05-24

申请人： Lawrence Andrew Kropp ,  David Stanasolovich ,  Marc Jay Weiss ,  Dennis Sek-On Yee

发明人： Lawrence Andrew Kropp ,  David Stanasolovich ,  Marc Jay Weiss ,  Dennis Sek-On Yee

IPC分类号： H01L21306

CPC分类号： H01J37/32963 ,  H01L21/3065 ,  H01L21/31116

摘要： A homogeneous marker is formed, possibly by the adsorption of trace amounts of an ambient material such as carbon monoxide gas, at a surface of a deposited material when the plasma in momentarily interrupted during plasma enhanced chemical vapor deposition or other deposition processes involving the presence of a plasma. When the deposited material is etched, the resulting crystal dislocations or adsorbed gas is detected as a marker by optical emission spectroscopy techniques. The accuracy of an end point determination of the etching process can be increased by providing a sequence of such markers within the bulk or volume of the deposited material. The markers, being merely an interface such as a slight crystal dislocation in otherwise homogeneous material, do not affect the electrical, chemical or optical properties of the remainder of the predetermined deposited material and thus the homogeneity of the deposited material is not significantly affected.

摘要翻译： 当等离子体增强化学气相沉积或涉及存在的等离子体增强化学气相沉积或其他沉积过程中等离子体暂时中断时，可能通过在沉积材料的表面上吸附痕量的环境材料（例如一氧化碳气体）形成均匀的标记物 等离子体 当沉积材料被蚀刻时，通过光发射光谱技术将所得到的晶体位错或吸附气体作为标记物被检测。 可以通过在沉积材料的体积或体积内提供这样的标记的序列来增加蚀刻工艺的终点确定的精度。 仅仅是诸如在其它均匀材料中的轻微晶体位错的界面的标记物不影响剩余的预定沉积材料的电学，化学或光学性质，因此沉积材料的均匀性不会受到显着影响。