公开(公告)号：US07208829B2

公开(公告)日：2007-04-24

申请号：US10514171

申请日：2003-02-10

申请人： Henning Hauenstein ,  Rainer Topp ,  Jochen Seibold ,  Dirk Balszunat ,  Stefan Ernst ,  Wolfgang Feiler ,  Thomas Koester ,  Stefan Hornung ,  Dieter Streb

发明人： Henning Hauenstein ,  Rainer Topp ,  Jochen Seibold ,  Dirk Balszunat ,  Stefan Ernst ,  Wolfgang Feiler ,  Thomas Koester ,  Stefan Hornung ,  Dieter Streb

IPC分类号： H01L29/72

CPC分类号： H01L23/488 ,  H01L23/3735 ,  H01L23/482 ,  H01L25/072 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.

摘要翻译： 一种半导体元件，其能够简单，快速且可靠地制造并且可用于功率应用，并且包括形成在半导体芯片的第一侧上的半导体芯片，下部第一主电极层，下部控制电极 形成在第一侧上的第一主电极层，形成在下第一主电极层和下控制电极层之间的第一侧上并部分覆盖下第一主电极层的绝缘层，形成在第一侧上的第一主电极层 下部第一主电极层，形成在下部控制电极层和绝缘层上的上部控制电极层，并且在绝缘层上部分地在下部第一主电极层的上方延伸，第二主电极层形成在第二侧上 的半导体芯片。

公开(公告)号：US20060163648A1

公开(公告)日：2006-07-27

申请号：US10514171

申请日：2003-02-10

申请人： Henning Hauenstein ,  Rainer Topp ,  Jochen Seibold ,  Dirk Balszunat ,  Stefan Ernst ,  Wolfgang Feiler ,  Thomas Koester ,  Stefan Hornung ,  Dieter Streb

发明人： Henning Hauenstein ,  Rainer Topp ,  Jochen Seibold ,  Dirk Balszunat ,  Stefan Ernst ,  Wolfgang Feiler ,  Thomas Koester ,  Stefan Hornung ,  Dieter Streb

IPC分类号： H01L29/76

CPC分类号： H01L23/488 ,  H01L23/3735 ,  H01L23/482 ,  H01L25/072 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.

摘要翻译： 一种半导体元件，其能够简单，快速且可靠地制造并且可用于功率应用，并且包括形成在半导体芯片的第一侧上的半导体芯片，下部第一主电极层，下部控制电极 形成在第一侧上的第一主电极层，形成在下第一主电极层和下控制电极层之间的第一侧上并部分覆盖下第一主电极层的绝缘层，形成在第一侧上的第一主电极层 下部第一主电极层，形成在下部控制电极层和绝缘层上的上部控制电极层，并且在绝缘层上部分地在下部第一主电极层的上方延伸，第二主电极层形成在第二侧上 的半导体芯片。