Semiconductor component
    1.
    发明授权
    Semiconductor component 有权
    半导体元件

    公开(公告)号:US07208829B2

    公开(公告)日:2007-04-24

    申请号:US10514171

    申请日:2003-02-10

    IPC分类号: H01L29/72

    摘要: A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.

    摘要翻译: 一种半导体元件,其能够简单,快速且可靠地制造并且可用于功率应用,并且包括形成在半导体芯片的第一侧上的半导体芯片,下部第一主电极层,下部控制电极 形成在第一侧上的第一主电极层,形成在下第一主电极层和下控制电极层之间的第一侧上并部分覆盖下第一主电极层的绝缘层,形成在第一侧上的第一主电极层 下部第一主电极层,形成在下部控制电极层和绝缘层上的上部控制电极层,并且在绝缘层上部分地在下部第一主电极层的上方延伸,第二主电极层形成在第二侧上 的半导体芯片。

    Semiconductor component
    2.
    发明申请
    Semiconductor component 有权
    半导体元件

    公开(公告)号:US20060163648A1

    公开(公告)日:2006-07-27

    申请号:US10514171

    申请日:2003-02-10

    IPC分类号: H01L29/76

    摘要: A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.

    摘要翻译: 一种半导体元件,其能够简单,快速且可靠地制造并且可用于功率应用,并且包括形成在半导体芯片的第一侧上的半导体芯片,下部第一主电极层,下部控制电极 形成在第一侧上的第一主电极层,形成在下第一主电极层和下控制电极层之间的第一侧上并部分覆盖下第一主电极层的绝缘层,形成在第一侧上的第一主电极层 下部第一主电极层,形成在下部控制电极层和绝缘层上的上部控制电极层,并且在绝缘层上部分地在下部第一主电极层的上方延伸,第二主电极层形成在第二侧上 的半导体芯片。

    Method of modifying molecular sieves by means of solid state ion exchange
    3.
    发明授权
    Method of modifying molecular sieves by means of solid state ion exchange 失效
    通过固态离子交换法改性分子筛的方法

    公开(公告)号:US5434114A

    公开(公告)日:1995-07-18

    申请号:US197481

    申请日:1994-02-16

    CPC分类号: B01J37/30 B01J29/74

    摘要: Molecular sieves are modified by an ion exchange process where metal cations are introduced into the molecular sieves by means of solid state ion exchange. The solid state ion exchange can be carried out as follows: a weighed amount of calcined and activated zeolite is intimately mixed with a precalculated amount of PtCl.sub.2, PdCl.sub.2, RhCl.sub.3, CuCl.sub.2, V.sub.2 O.sub.5 or another compound of the noble metals (e.g., corresponding halides or oxides), the solids mixture is then heated in a current of inert gas (e.g., a current of helium gas or of nitrogen) to temperatures of 400.degree. to 600.degree. C., then cooled down to room temperature and subsequently reduced in a current of hydrogen for 10 to 14 hours at 280.degree. to 350.degree. C. in order to produce small metal clusters from the cationically introduced metal.

    摘要翻译: 分子筛通过离子交换方法进行改性,其中通过固态离子交换将金属阳离子引入分子筛中。 固态离子交换可以如下进行:称重量的煅烧和活化的沸石与预先计算量的PtCl 2,PdCl 2,RhCl 3,CuCl 2,V 2 O 5或贵金属的另一种化合物(例如,相应的卤化物或 氧化物),然后将固体混合物在惰性气体(例如,氦气或氮气流)中加热至400至600℃的温度,然后冷却至室温,随后减少电流 的氢气在280〜350℃下进行10〜14小时,以从阳离子导入的金属产生小的金属簇。

    Section straightening machine
    4.
    发明授权
    Section straightening machine 有权
    剖分矫直机

    公开(公告)号:US06843091B2

    公开(公告)日:2005-01-18

    申请号:US10312101

    申请日:2001-06-02

    IPC分类号: B21D3/05 B21D3/02

    CPC分类号: B21D3/05

    摘要: In a straightening machine for straightening sections like rolled beams, wherein tools (11) are arranged on a plurality of mutually parallel driven straightening shafts (8, 9; 21a, 21b, 22a, 22b) disposed above and below the alignment line in the transport direction of the product to be straightened, and of which preferably the upper straightening shafts (2a, 21b) are adjustable for setting the straightening gap, the straightening shafts (2a, 21a, b) are individually adjustable and each have on both sides an adjusting means engaging straightening shaft ends (6, 7; 23a, 23b) whereby in straightening operations at least the adjusting means on the service side (6; 23a) remote from the drive side I is provided with a force (FA) acting opposite to the straightening force (FR) relevant hereto.

    摘要翻译: 在用于矫直部分的矫直机如轧制梁中,其中工具(11)布置在多个相互平行的驱动矫直轴(8,9; 21a,21b,22a,22b)上,所述多个相互平行的驱动矫直轴(8,9; 21a,21b,22a,22b) 矫直产品的方向,其中优选地,上矫正轴(2a,21b)可调整以调节矫直间隙,矫直轴(2a,21a,b)可单独调节,并且每个都具有调节 意味着接合矫直轴端部(6,7; 23a,23b),由此在矫直操作中,至少远离驱动侧I的维修侧(6; 23a)上的调节装置设置有与所述驱动侧I相对的作用力 矫直力(FR)相关。

    Method of modifying molecular sieves by means of solid state ion
exchange, and a method for hydrogenating olefinic compounds
    6.
    发明授权
    Method of modifying molecular sieves by means of solid state ion exchange, and a method for hydrogenating olefinic compounds 失效
    通过固态离子交换法改性分子筛的方法,以及烯烃化合物的氢化方法

    公开(公告)号:US5545784A

    公开(公告)日:1996-08-13

    申请号:US419896

    申请日:1995-04-11

    CPC分类号: B01J37/30 B01J29/74

    摘要: Molecular sieves are modified by an ion exchange process where metal cations are introduced into the molecular sieves by means of solid state ion exchange. The solid state ion exchange can be carried out as follows: a weighed amount of calcined and activated zeolite is intimately mixed with a precalculated amount of PtCl.sub.2, PdCl.sub.2, RhCl.sub.3, CuCl.sub.2, V.sub.2 O.sub.5 or another compound of the noble metals (e.g., corresponding halides or oxides), the solids mixture is then heated in a current of inert gas (e.g., a current of helium gas or of nitrogen) to temperatures of 400.degree. to 600.degree. C., then cooled down to room temperature and subsequently reduced in a current of hydrogen for 10 to 14 hours at 280.degree. to 350.degree. C. in order to produce small metal clusters from the cationically introduced metal.

    摘要翻译: 分子筛通过离子交换方法进行改性,其中通过固态离子交换将金属阳离子引入分子筛中。 固态离子交换可以如下进行:称重量的煅烧和活化的沸石与预先计算量的PtCl 2,PdCl 2,RhCl 3,CuCl 2,V 2 O 5或贵金属的另一种化合物(例如,相应的卤化物或 氧化物),然后将固体混合物在惰性气体(例如,氦气或氮气流)中加热至400至600℃的温度,然后冷却至室温,随后减少电流 的氢气在280〜350℃下进行10〜14小时,以从阳离子导入的金属产生小的金属簇。

    Modified molecular sieves by means of solid ion exchange
    8.
    发明授权
    Modified molecular sieves by means of solid ion exchange 失效
    通过固体离子交换改性分子筛

    公开(公告)号:US5529964A

    公开(公告)日:1996-06-25

    申请号:US388832

    申请日:1995-02-15

    CPC分类号: B01J37/30 B01J29/74

    摘要: Molecular sieves are modified by an ion exchange process where metal cations are introduced into the molecular sieves by means of solid state ion exchange. The solid state ion exchange can be carried out as follows: a weighed amount of calcined and activated zeolite is intimately mixed with a precalculated amount of PtCl.sub.2, PdCl.sub.2, RhCl.sub.3, CuCl.sub.2, V.sub.2 O.sub.5 or another compound of the noble metals (e.g., corresponding halides or oxides), the solids mixture is then heated in a current of inert gas (e.g., a current of helium gas or of nitrogen) to temperatures of 400.degree. to 600.degree. C., then cooled down to room temperature and subsequently reduced in a current of hydrogen for 10 to 14 hours at 280.degree. to 350.degree. C. in order to produce small metal clusters from the cationically introduced metal.

    摘要翻译: 分子筛通过离子交换方法进行改性,其中通过固态离子交换将金属阳离子引入分子筛中。 固态离子交换可以如下进行:称重量的煅烧和活化的沸石与预先计算量的PtCl 2,PdCl 2,RhCl 3,CuCl 2,V 2 O 5或贵金属的另一种化合物(例如,相应的卤化物或 氧化物),然后将固体混合物在惰性气体(例如,氦气或氮气流)中加热至400至600℃的温度,然后冷却至室温,随后减少电流 的氢气在280〜350℃下进行10〜14小时,以从阳离子导入的金属产生小的金属簇。