公开(公告)号：US20070228010A1

公开(公告)日：2007-10-04

申请号：US11395799

申请日：2006-03-31

申请人： James Martin ,  Kelly Taylor ,  Changfeng Xia ,  Donald Culp ,  David Frystak

发明人： James Martin ,  Kelly Taylor ,  Changfeng Xia ,  Donald Culp ,  David Frystak

IPC分类号： B44C1/22 ,  B32B1/08 ,  H01L21/306

CPC分类号： H01L21/02087 ,  H01L21/02274 ,  H01L21/31625 ,  H01L21/3185

摘要： A method removes and/or contains edge residue. A wafer comprised of a semiconductor material having a top surface, a bottom surface and an edge surface is provided. The bottom surface and the top surface are substantially planar and the edge surface is non-planar. Residue can be located on the edge surface, which can dislodge if not addressed and damage devices formed on the wafer. One or more devices can be at least partially formed on the top surface. A pre-metal dielectric liner is formed over the top surface of the wafer and covering at least a portion of the residue. An edge portion of the liner is etched or otherwise removed to expose the portion of the residue. Thereafter, a pre-metal dielectric layer is formed over the top surface of the wafer and the pre-metal dielectric liner. During formation of the pre-metal dielectric layer, the edge residue is removed and/or contained.

摘要翻译： 一种方法去除和/或含有边缘残留物。 提供由具有顶表面，底表面和边缘表面的半导体材料组成的晶片。 底表面和顶表面基本上是平面的，并且边缘表面是非平面的。 残留物可以位于边缘表面上，如果不被寻址并且损坏在晶片上形成的器件，其可以移除。 一个或多个装置可以至少部分地形成在顶部表面上。 在晶片的顶表面上形成预金属电介质衬垫，并覆盖至少一部分残留物。 衬里的边缘部分被蚀刻或以其它方式去除以暴露残余部分。 此后，在晶片的顶表面和预金属电介质衬垫之上形成预金属电介质层。 在金属前介电层的形成期间，边缘残留物被去除和/或包含。

公开(公告)号：US20070037357A1

公开(公告)日：2007-02-15

申请号：US11201930

申请日：2005-08-11

申请人： Donald Culp

发明人： Donald Culp

IPC分类号： H01L21/331

CPC分类号： H01L21/266 ,  G03F7/427 ,  H01L21/31138 ,  H01L21/823418

摘要： The present invention provides a method for removing photoresist, and a method for manufacturing a semiconductor device. The method for removing photoresist, without limitation, may include subjecting a photoresist layer (210) located over a substrate (110) to a thermal bake (410) in the presence of hydrogen, and then removing the photoresist layer (210).

摘要翻译： 本发明提供一种去除光致抗蚀剂的方法及其制造方法。 用于除去光致抗蚀剂的方法，但不限于，可以包括在氢的存在下使位于衬底（110）上的光致抗蚀剂层（210）进行热烘烤（410），然后除去光致抗蚀剂层（210）。

公开(公告)号：US20100036170A1

公开(公告)日：2010-02-11

申请号：US12460752

申请日：2009-07-24

申请人： Clarence P. Stadlwieser ,  Bernie B. Osborne ,  John P. Dever ,  Harvey E. Andresen ,  Michael L. Hutchision ,  Gary L. Culp ,  Donald Culp ,  Stephen R. Osborne ,  Liping Zhang ,  Michael Habenschuss ,  Andrew Addie

发明人： Clarence P. Stadlwieser ,  Bernie B. Osborne ,  John P. Dever ,  Harvey E. Andresen ,  Michael L. Hutchision ,  Gary L. Culp ,  Donald Culp ,  Stephen R. Osborne ,  Liping Zhang ,  Michael Habenschuss ,  Andrew Addie

IPC分类号： C07C215/02 ,  B01D3/14 ,  B01D3/34 ,  C07C31/02 ,  C07C41/00 ,  C07C31/18 ,  C07C41/01

CPC分类号： C07D301/32

摘要： Processes and systems for purifying ethylene oxide, including introducing a feed stream including ethylene oxide to a heat exchanger to heat the feed stream, feeding the heated feed stream to a distillation apparatus base below a first stage, removing from the distillation apparatus an impurity fraction as a top exit stream from the distillation apparatus located at a top take-off on the distillation apparatus, removing from the distillation apparatus an ethylene oxide stream of 99.7 weight percent purity, based on the total weight of the ethylene oxide stream, from the distillation apparatus, and removing from the distillation apparatus an aldehyde enriched fraction as a bottom stream from the distillation apparatus, where the aldehyde enriched fraction is fed directly to a glycol reactor.

摘要翻译： 用于纯化环氧乙烷的方法和系统，包括将包含环氧乙烷的进料流引入热交换器以加热进料流，将加热的进料流输送到第一阶段以下的蒸馏装置底部，从蒸馏装置中除去杂质馏分如 来自位于蒸馏装置的顶部排出口的蒸馏装置的顶部出口物流，从蒸馏装置除去基于环氧乙烷料流的总重量为99.7重量％的纯度的环氧乙烷物流，来自蒸馏装置 ，并从蒸馏装置中将来自蒸馏装置的作为底部物流的富含醛的馏分除去，其中富含醛的馏分直接进料到二醇反应器中。