公开(公告)号：US20140144370A1

公开(公告)日：2014-05-29

申请号：US14117901

申请日：2012-05-22

申请人： Dong Bok Lee

发明人： Dong Bok Lee

IPC分类号： E01F9/06

CPC分类号： E01F9/553 ,  C03C12/02 ,  Y10T29/49826

摘要： A reflector for a road sign and a manufacturing method thereof are provided. The road sign reflector includes a base attached to a road facility or a road surface, light-transmitting bodies mounted on the base and made of a transparent material, and a reflective layer formed on a contact surface between the light-transmitting bodies and the base and reflecting light incident into the light-transmitting bodies. The manufacturing of the road sign reflector is completed by attaching the road sign reflector to a center line and a lane. The road sign reflector can be directly attached to a guardrail and road facilities without installation of an additional post, thereby facilitating the installation work. In the road sign reflector, the reflective layer formed on the light-transmitting bodies is inwardly inserted in the base and exposed surfaces of the light-transmitting bodies are exposed to the outside of the base, thereby increasing reflecting efficiency.

摘要翻译： 提供了一种用于道路标志的反射器及其制造方法。 路标反射器包括附接到道路设施或路面的基座，安装在基座上并由透明材料制成的透光体，以及形成在透光体和基底之间的接触表面上的反射层 并且反射入射到透光体中的光。 通过将道路标志反射器安装在中心线和车道上来完成道路标志反射器的制造。 道路标志反射器可以直接连接到护栏和道路设施，而无需安装附加柱，从而便于安装工作。 在道路标志反射器中，形成在透光体上的反射层向内插入基部，并且透光体的露出面暴露于基体的外侧，从而提高反射效率。

公开(公告)号：US20090173927A1

公开(公告)日：2009-07-09

申请号：US12232961

申请日：2008-09-26

申请人： Cheol-kyu Kim ,  Min-ho Kwon ,  Yoon-ho Khang ,  Youn-seon Kang ,  Tae-yon Lee ,  Sung Heo ,  Ki-bum Kim ,  Sung-wook Nam ,  Dong-bok Lee

发明人： Cheol-kyu Kim ,  Min-ho Kwon ,  Yoon-ho Khang ,  Youn-seon Kang ,  Tae-yon Lee ,  Sung Heo ,  Ki-bum Kim ,  Sung-wook Nam ,  Dong-bok Lee

IPC分类号： H01L29/02 ,  H01L21/44

CPC分类号： H01L45/126 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/16

摘要： Provided are a storage node, phase change memory device and methods of manufacturing and operating the same. The storage node may include an electrode, a phase change layer, and an anti-diffusion layer between the electrode and the phase change layer and including a silicide compound. The phase change memory device may include the storage node and a switching device connected to the storage node.

摘要翻译： 提供了一种存储节点，相变存储器件及其制造和操作方法。 存储节点可以包括在电极和相变层之间的电极，相变层和抗扩散层，并且包括硅化物化合物。 相变存储器件可以包括存储节点和连接到存储节点的交换设备。