公开(公告)号：US5753958A

公开(公告)日：1998-05-19

申请号：US543485

申请日：1995-10-16

申请人： James B. Burr ,  Douglas Alan Laird

发明人： James B. Burr ,  Douglas Alan Laird

IPC分类号： H01L21/336 ,  H01L29/10 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L29/66659 ,  H01L29/1087

摘要： An adjustable threshold voltage MOS device having an asymmetric pocket region is disclosed herein. The pocket region abuts one of a source or drain proximate the device's channel region. The pocket region has the same conductivity type as the device's bulk (albeit at a higher dopant concentration) and, of course, the opposite conductivity type as the device's source and drain. An MOS device having such pocket region may have its threshold voltage adjusted by applying a potential directly to its pocket region. This capability is realized by providing a contact or conductive tie electrically coupled to the pocket region. This "pocket tie" is also electrically coupled to a metallization line (external to the device) which can be held at a specified potential corresponding to a potential required to back-bias the device by a specified amount.

摘要翻译： 本文公开了具有不对称袋区域的可调阈值电压MOS器件。 口袋区域邻近装置的通道区域邻近源极或漏极之一。 口袋区域具有与器件体积相同的导电类型（尽管具有较高的掺杂剂浓度），当然还有与器件的源极和漏极相反的导电类型。 具有这样的口袋区域的MOS器件可以通过将电位直接施加到其口袋区域来调节其阈值电压。 该能力通过提供电耦合到口袋区域的接触或导电接头来实现。 这种“袖带”也电耦合到金属化线（器件外部），该金属化线可以保持在与设备反偏特定量所需的电位相对应的指定电位。