公开(公告)号：US08217464B2

公开(公告)日：2012-07-10

申请号：US12851805

申请日：2010-08-06

Applicant: Dustin Do ,  Andy L. Lee ,  Giles V. Powell ,  Bradley Jensen ,  Swee Aun Lau ,  Wuu-Cherng Lin ,  Thomas H. White

Inventor： Dustin Do ,  Andy L. Lee ,  Giles V. Powell ,  Bradley Jensen ,  Swee Aun Lau ,  Wuu-Cherng Lin ,  Thomas H. White

IPC: H01L29/78

CPC classification number: H01L21/823493 ,  H01L21/32055 ,  H01L21/76224 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823871 ,  H01L21/823892 ,  H01L27/0207 ,  H01L29/7833

Abstract: Embodiments of N-well or P-well strap structures are disclosed with lower space requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.

Abstract translation: 公开了N阱或P阱带结构的实施例，其通过在一个或多个浮动多晶硅栅极指的两侧形成带而获得较低的空间要求。

公开(公告)号：US20130140640A1

公开(公告)日：2013-06-06

申请号：US13814590

申请日：2011-08-04

Applicant: Dustin Do ,  Andy L. Lee ,  Giles V. Powell ,  Bradley Jensen ,  Swee Aun Lau ,  Wuu-Cherng Lin

Inventor： Dustin Do ,  Andy L. Lee ,  Giles V. Powell ,  Bradley Jensen ,  Swee Aun Lau ,  Wuu-Cherng Lin

IPC: H01L27/04

CPC classification number: H01L27/04 ,  H01L21/823493 ,  H01L21/823892 ,  H01L27/0207 ,  H01L27/092 ,  H01L29/7833

Abstract: Embodiments of N-well or P-well strap structures are disclosed with lower requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.

Abstract translation: 公开了N阱或P阱带结构的实施例，其通过在一个或多个浮动多晶硅栅极指的两侧形成带来实现的较低要求。

公开(公告)号：US20120261738A1

公开(公告)日：2012-10-18

申请号：US13538438

申请日：2012-06-29

Applicant: Dustin Do ,  Andy Lee ,  Giles V. Powell ,  Bradley Jensen ,  Swee Aun Lau ,  Wuu-Cherng Lin ,  Thomas H. White

Inventor： Dustin Do ,  Andy Lee ,  Giles V. Powell ,  Bradley Jensen ,  Swee Aun Lau ,  Wuu-Cherng Lin ,  Thomas H. White

IPC: H01L29/788

CPC classification number: H01L27/0207 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823871 ,  H01L21/823878

Abstract: Embodiments of N-well or P-well strap structures are disclosed with lower space requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.

Abstract translation: 公开了N阱或P阱带结构的实施例，其通过在一个或多个浮动多晶硅栅极指的两侧形成带而获得较低的空间要求。

公开(公告)号：US09449962B2

公开(公告)日：2016-09-20

申请号：US13814590

申请日：2011-08-04

Applicant: Dustin Do ,  Andy L. Lee ,  Giles V. Powell ,  Bradley Jensen ,  Swee Aun Lau ,  Wuu-Cherng Lin ,  Thomas H. White

Inventor： Dustin Do ,  Andy L. Lee ,  Giles V. Powell ,  Bradley Jensen ,  Swee Aun Lau ,  Wuu-Cherng Lin ,  Thomas H. White

IPC: H01L27/04 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L27/04 ,  H01L21/823493 ,  H01L21/823892 ,  H01L27/0207 ,  H01L27/092 ,  H01L29/7833

Abstract: Embodiments of N-well or P-well strap structures are disclosed with lower requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.

Abstract translation: 公开了N阱或P阱带结构的实施例，其通过在一个或多个浮动多晶硅栅极指的两侧形成带来实现的较低要求。

公开(公告)号：US20120032276A1

公开(公告)日：2012-02-09

申请号：US12851805

申请日：2010-08-06

Applicant: Dustin Do ,  Andy Lee ,  Giles V. Powell ,  Bradley Jensen ,  Swee Aun Lau ,  Wuu-Cherng Lin ,  Thomas H. White

Inventor： Dustin Do ,  Andy Lee ,  Giles V. Powell ,  Bradley Jensen ,  Swee Aun Lau ,  Wuu-Cherng Lin ,  Thomas H. White

IPC: H01L29/06 ,  H01L29/78

CPC classification number: H01L21/823493 ,  H01L21/32055 ,  H01L21/76224 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823871 ,  H01L21/823892 ,  H01L27/0207 ,  H01L29/7833

Abstract: Embodiments of N-well or P-well strap structures are disclosed with lower space requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.

Abstract translation: 公开了N阱或P阱带结构的实施例，其通过在一个或多个浮动多晶硅栅极指的两侧形成带而获得较低的空间要求。