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    ARRAY OF MUTUALLY INSULATED GEIGER-MODE AVALANCHE PHOTODIODES, AND CORRESPONDING MANUFACTURING PROCESS
    1.
    发明申请
    ARRAY OF MUTUALLY INSULATED GEIGER-MODE AVALANCHE PHOTODIODES, AND CORRESPONDING MANUFACTURING PROCESS 有权
    绝缘子伽米夫模型AVALANCHE光电子阵列和相应的制造工艺

    公开(公告)号：US20090184317A1

    公开(公告)日：2009-07-23

    申请号：US12356464

    申请日：2009-01-20

    Applicant: Delfo Nunziato SANFILIPPO ,  Emilio Antonio SCIACCA ,  Piero Giorgio FALLICA ,  Salvatore Antonio LOMBARDO

    Inventor： Delfo Nunziato SANFILIPPO ,  Emilio Antonio SCIACCA ,  Piero Giorgio FALLICA ,  Salvatore Antonio LOMBARDO

    IPC: H01L31/036 ,  H01L21/70 ,  H01L31/02

    CPC classification number: H01L27/1446 ,  H01L27/14658 ,  H01L27/14689 ,  H01L31/107

    Abstract: An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region.

    Abstract translation: 盖格模式雪崩光电二极管阵列的一个实施例，其中每个光电二极管由半导体材料体形成，具有第一导电类型，容纳第二导电类型的第一阴极区，并面向主体的表面， 具有第一导电类型并且具有比主体更高的掺杂水平的阳极区域，其在主体内延伸并且横向于第一阴极区域和与其间隔一定距离的表面，以及延伸穿过本体并绝缘的绝缘区域 活动区域从身体的其余部分，活动区域容纳第一阴极区域和阳极区域。 绝缘区域由金属材料的反射镜区域，具有第二导电类型的沟道截止区域，围绕反射镜区域以及布置在反射镜区域和通道阻挡区域之间的电介质材料的涂覆区域形成。

    Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process
    2.
    发明授权
    Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process 有权
    阵列相互绝缘的盖革型雪崩光电二极管及相应的制造工艺

    公开(公告)号：US08574945B2

    公开(公告)日：2013-11-05

    申请号：US13241114

    申请日：2011-09-22

    Applicant: Delfo Nunziato Sanfilippo ,  Emilio Antonio Sciacca ,  Piero Giorgio Fallica ,  Salvatore Antonio Lombardo

    Inventor： Delfo Nunziato Sanfilippo ,  Emilio Antonio Sciacca ,  Piero Giorgio Fallica ,  Salvatore Antonio Lombardo

    IPC: H01L21/76

    CPC classification number: H01L27/1446 ,  H01L27/14658 ,  H01L27/14689 ,  H01L31/107

    Abstract: An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region.

    Abstract translation: 盖格模式雪崩光电二极管阵列的一个实施例，其中每个光电二极管由半导体材料体形成，具有第一导电类型，容纳第二导电类型的第一阴极区，并面向主体的表面， 具有第一导电类型并且具有比主体更高的掺杂水平的阳极区域，其在主体内延伸并且横向于第一阴极区域和与其间隔一定距离的表面，以及延伸穿过本体并绝缘的绝缘区域 活动区域从身体的其余部分，活动区域容纳第一阴极区域和阳极区域。 绝缘区域由金属材料的反射镜区域，具有第二导电类型的沟道截止区域，围绕反射镜区域以及布置在反射镜区域和通道阻挡区域之间的电介质材料的涂覆区域形成。

    ARRAY OF MUTUALLY INSULATED GEIGER-MODE AVALANCHE PHOTODIODES, AND CORRESPONDING MANUFACTURING PROCESS
    3.
    发明申请
    ARRAY OF MUTUALLY INSULATED GEIGER-MODE AVALANCHE PHOTODIODES, AND CORRESPONDING MANUFACTURING PROCESS 有权
    绝缘子伽米夫模型AVALANCHE光电子阵列和相应的制造工艺

    公开(公告)号：US20120009722A1

    公开(公告)日：2012-01-12

    申请号：US13241114

    申请日：2011-09-22

    Applicant: DELFO NUNZIATO SANFILIPPO ,  EMILIO ANTONIO SCIACCA ,  PIERO GIORGIO FALLICA ,  SALVATORE ANTONIO LOMBARDO

    Inventor： DELFO NUNZIATO SANFILIPPO ,  EMILIO ANTONIO SCIACCA ,  PIERO GIORGIO FALLICA ,  SALVATORE ANTONIO LOMBARDO

    IPC: H01L31/18

    CPC classification number: H01L27/1446 ,  H01L27/14658 ,  H01L27/14689 ,  H01L31/107

    Abstract: An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region.

    Abstract translation: 盖格模式雪崩光电二极管阵列的一个实施例，其中每个光电二极管由半导体材料体形成，具有第一导电类型，容纳第二导电类型的第一阴极区，并面向主体的表面， 具有第一导电类型并且具有比主体更高的掺杂水平的阳极区域，其在主体内延伸并且横向于第一阴极区域和与其间隔一定距离的表面，以及延伸穿过主体并绝缘的绝缘区域 活动区域从身体的其余部分，活动区域容纳第一阴极区域和阳极区域。 绝缘区域由金属材料的反射镜区域，具有第二导电类型的沟道截止区域，围绕反射镜区域以及布置在反射镜区域和通道阻挡区域之间的电介质材料的涂覆区域形成。

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