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公开(公告)号：US20220230931A1
公开(公告)日：2022-07-21
申请号：US17614434
申请日：2019-05-28
发明人： Wei WANG , Ping LI , Yanhao PENG , Nianchu HU , Bin JIA
IPC分类号： H01L23/31 , H01L21/56 , H01L25/065 , H01L23/498 , H01L23/64 , H01L21/48 , H01L23/00
摘要： A chip encapsulation structure, including: a wafer provided with a groove; a first metal wire arranged on surfaces of the groove and the wafer; a metal solder ball arranged on the first metal wire or on a metal pad of the chip, and is configured to solder the metal pad of the chip to the first metal wire; a first plastic encapsulation film covering upper surfaces of the wafer, the chip and the first metal wire, and entering a gap between a periphery of a functional area of the chip and the first metal wire, so as to form a closed cavity among the wafer, the groove and the chip; an inductive structure arranged on an upper surface of the first plastic encapsulation film and/or a lower surface of the wafer, and connected to the chip through the first metal wire; and a pad arranged on the inductive structure.
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公开(公告)号：US20230039933A1
公开(公告)日：2023-02-09
申请号：US17790382
申请日：2020-01-20
发明人： Jiang JIANG , Ping LI , Wei WANG , Mingguo ZHU , Nianchu HU , Bin JIA
摘要： The present disclosure provides a radio frequency filter, including: a substrate; a supporting electrode protruded on a front surface of the substrate; and a thin film structure formed on the substrate and spaced with the substrate by the supporting electrode. An end surface of a top end of the supporting electrode is in sealing contact with a front surface of the thin film structure.
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公开(公告)号：US20230126725A1
公开(公告)日：2023-04-27
申请号：US17793811
申请日：2020-01-20
发明人： Jiang JIANG , Ping LI , Wei WANG , Mingguo ZHU , Nianchu HU , Bin JIA
摘要： The present disclosure provides a method of preparing a radio frequency filter, including: a substrate; a supporting electrode protruded on a front surface of the substrate; and a thin film structure formed on the substrate and spaced with the substrate by the supporting electrode. An end surface of a top end of the supporting electrode is in sealing contact with a front surface of the thin film structure.
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公开(公告)号：US20220376672A1
公开(公告)日：2022-11-24
申请号：US17621367
申请日：2019-07-10
发明人： Wei WANG , Ping LI , Nianchu HU , Bin JIA
摘要： A method of manufacturing a bulk acoustic wave filter is provided, including: forming an acoustic reflection air cavity, a sacrificial layer, a seed layer, a lower electrode layer and a piezoelectric layer of n resonators on a substrate in sequence, wherein n is greater than or equal to 2; taking N from 1 to n for respectively repeating following steps: forming an N-th metal hard mask layer, defining an effective area of a first resonator to an N-th resonator by using a photolithography process, removing the N-th metal hard mask layer outside the effective area of the first resonator to the N-th resonator, oxidizing the piezoelectric layer outside the effective area of the first resonator to the N-th resonator to form an N-th oxidized part of the piezoelectric layer, and etching the N-th oxidized part of the piezoelectric layer; removing the metal hard mask layer of the effective area of the first resonator to the N-th resonator, so as to form the piezoelectric layer having different thicknesses of the first resonator to the N-th resonator; and forming an upper electrode layer on the piezoelectric layer having different thicknesses of the first resonator to the N-th resonator.
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公开(公告)号：US20230124437A1
公开(公告)日：2023-04-20
申请号：US17906392
申请日：2020-03-18
发明人： Wei WANG , Jinming YANG , Ping LI , Jiang JIANG , Bohua PENG , Nianchu HU , Bin JIA
摘要： Provided are a solidly mounted resonator and a method for preparing a solidly mounted resonator. The solidly mounted resonator includes: a piezoelectric structure, wherein the piezoelectric structure includes: an upper electrode layer, a lower electrode layer and a piezoelectric layer. The lower electrode layer disposed corresponding to the piezoelectric structure, and the lower electrode layer includes: a protruding portion protruding downward corresponding to a lower surface of the lower electrode layer; the piezoelectric layer is disposed on an upper surface of the lower electrode layer; the upper electrode layer is disposed on an upper surface of the piezoelectric layer.
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公开(公告)号：US20220407494A1
公开(公告)日：2022-12-22
申请号：US17779251
申请日：2019-11-25
发明人： Bohua PENG , Ping LI , Nianchu HU , Bin JIA
摘要： An acoustic wave device including: a POI structure including: a material layer where a high acoustic velocity layer and a low acoustic velocity layer are alternate, a substrate is a lowermost high acoustic velocity layer; a first piezoelectric layer located above the material layer, wherein a layer adjacent to the first piezoelectric layer is referred to as a surface low acoustic velocity layer; wherein an acoustic velocity of a bulk wave propagated in the high acoustic velocity layer and the low high acoustic velocity layer is higher than and lower than an acoustic velocity of a bulk wave of the first piezoelectric layer, respectively. The POI structure includes at least two regions, a first device having a resonance of a first vibration mode is manufactured in the first region, and a second device having a resonance of a second vibration mode is manufactured in a second region.
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公开(公告)号：US11336258B2
公开(公告)日：2022-05-17
申请号：US16614200
申请日：2018-07-26
发明人： Ping Li , Wei Wang , Nianchu Hu , Bin Jia
摘要： The present disclosure provides a bulk acoustic wave resonator, a manufacturing method thereof, and a filter, wherein the bulk acoustic wave resonator includes: a substrate; an acoustic reflection unit on the substrate; a piezoelectric stack structure on the acoustic reflection unit; and a pad on the piezoelectric stack structure; wherein the pad has an overlapping region with the acoustic reflection unit. The acoustic wave resonator, the manufacturing method thereof and the filter of the present disclosure can effectively reduce connection resistance of the bulk acoustic wave resonator, thereby reducing insertion loss of the filter.
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