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公开(公告)号：US20220230931A1
公开(公告)日：2022-07-21
申请号：US17614434
申请日：2019-05-28
发明人： Wei WANG , Ping LI , Yanhao PENG , Nianchu HU , Bin JIA
IPC分类号： H01L23/31 , H01L21/56 , H01L25/065 , H01L23/498 , H01L23/64 , H01L21/48 , H01L23/00
摘要： A chip encapsulation structure, including: a wafer provided with a groove; a first metal wire arranged on surfaces of the groove and the wafer; a metal solder ball arranged on the first metal wire or on a metal pad of the chip, and is configured to solder the metal pad of the chip to the first metal wire; a first plastic encapsulation film covering upper surfaces of the wafer, the chip and the first metal wire, and entering a gap between a periphery of a functional area of the chip and the first metal wire, so as to form a closed cavity among the wafer, the groove and the chip; an inductive structure arranged on an upper surface of the first plastic encapsulation film and/or a lower surface of the wafer, and connected to the chip through the first metal wire; and a pad arranged on the inductive structure.
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公开(公告)号：US20230039933A1
公开(公告)日：2023-02-09
申请号：US17790382
申请日：2020-01-20
发明人： Jiang JIANG , Ping LI , Wei WANG , Mingguo ZHU , Nianchu HU , Bin JIA
摘要： The present disclosure provides a radio frequency filter, including: a substrate; a supporting electrode protruded on a front surface of the substrate; and a thin film structure formed on the substrate and spaced with the substrate by the supporting electrode. An end surface of a top end of the supporting electrode is in sealing contact with a front surface of the thin film structure.
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公开(公告)号：US20230124437A1
公开(公告)日：2023-04-20
申请号：US17906392
申请日：2020-03-18
发明人： Wei WANG , Jinming YANG , Ping LI , Jiang JIANG , Bohua PENG , Nianchu HU , Bin JIA
摘要： Provided are a solidly mounted resonator and a method for preparing a solidly mounted resonator. The solidly mounted resonator includes: a piezoelectric structure, wherein the piezoelectric structure includes: an upper electrode layer, a lower electrode layer and a piezoelectric layer. The lower electrode layer disposed corresponding to the piezoelectric structure, and the lower electrode layer includes: a protruding portion protruding downward corresponding to a lower surface of the lower electrode layer; the piezoelectric layer is disposed on an upper surface of the lower electrode layer; the upper electrode layer is disposed on an upper surface of the piezoelectric layer.
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公开(公告)号：US20220407494A1
公开(公告)日：2022-12-22
申请号：US17779251
申请日：2019-11-25
发明人： Bohua PENG , Ping LI , Nianchu HU , Bin JIA
摘要： An acoustic wave device including: a POI structure including: a material layer where a high acoustic velocity layer and a low acoustic velocity layer are alternate, a substrate is a lowermost high acoustic velocity layer; a first piezoelectric layer located above the material layer, wherein a layer adjacent to the first piezoelectric layer is referred to as a surface low acoustic velocity layer; wherein an acoustic velocity of a bulk wave propagated in the high acoustic velocity layer and the low high acoustic velocity layer is higher than and lower than an acoustic velocity of a bulk wave of the first piezoelectric layer, respectively. The POI structure includes at least two regions, a first device having a resonance of a first vibration mode is manufactured in the first region, and a second device having a resonance of a second vibration mode is manufactured in a second region.
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公开(公告)号：US20230126725A1
公开(公告)日：2023-04-27
申请号：US17793811
申请日：2020-01-20
发明人： Jiang JIANG , Ping LI , Wei WANG , Mingguo ZHU , Nianchu HU , Bin JIA
摘要： The present disclosure provides a method of preparing a radio frequency filter, including: a substrate; a supporting electrode protruded on a front surface of the substrate; and a thin film structure formed on the substrate and spaced with the substrate by the supporting electrode. An end surface of a top end of the supporting electrode is in sealing contact with a front surface of the thin film structure.
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公开(公告)号：US20220376672A1
公开(公告)日：2022-11-24
申请号：US17621367
申请日：2019-07-10
发明人： Wei WANG , Ping LI , Nianchu HU , Bin JIA
摘要： A method of manufacturing a bulk acoustic wave filter is provided, including: forming an acoustic reflection air cavity, a sacrificial layer, a seed layer, a lower electrode layer and a piezoelectric layer of n resonators on a substrate in sequence, wherein n is greater than or equal to 2; taking N from 1 to n for respectively repeating following steps: forming an N-th metal hard mask layer, defining an effective area of a first resonator to an N-th resonator by using a photolithography process, removing the N-th metal hard mask layer outside the effective area of the first resonator to the N-th resonator, oxidizing the piezoelectric layer outside the effective area of the first resonator to the N-th resonator to form an N-th oxidized part of the piezoelectric layer, and etching the N-th oxidized part of the piezoelectric layer; removing the metal hard mask layer of the effective area of the first resonator to the N-th resonator, so as to form the piezoelectric layer having different thicknesses of the first resonator to the N-th resonator; and forming an upper electrode layer on the piezoelectric layer having different thicknesses of the first resonator to the N-th resonator.
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