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公开(公告)号:US4030966A
公开(公告)日:1977-06-21
申请号:US590888
申请日:1975-06-27
CPC分类号: C30B7/00 , Y10S117/902 , Y10S117/911 , Y10T117/1096 , Y10T24/344
摘要: This invention relates to a method of growing a single quartz crystal stone. In particular, a method for hydrothermally growing a quartz stone from a quartz seed is disclosed. A substantially stress-free quartz stone is grown in an autoclave by clamping a quartz crystal seed plate in a clip so as to permit substantially unobstructed growth of the stone in the plane of the seed plate, and growing at least a portion of the stone through at least one aperture formed in the clip.
摘要翻译: 本发明涉及生长单个石英晶体石的方法。 特别地,公开了一种从石英种子水热生长石英石的方法。 通过将石英晶种子板夹在夹子中,将基本上无应力的石英石生长在高压釜中,以允许石块在种子板的平面内基本上无障碍地生长,并且使至少一部分石头通过 形成在夹子中的至少一个孔。