-
公开(公告)号：US20220098094A1
公开(公告)日：2022-03-31
申请号：US17545493
申请日：2021-12-08
申请人： CORNING INCORPORATED , ICFO
摘要： Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.
-
公开(公告)号：US11225434B2
公开(公告)日：2022-01-18
申请号：US16891606
申请日：2020-06-03
申请人： CORNING INCORPORATED , ICFO
摘要： Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.
-
公开(公告)号：US10156026B2
公开(公告)日：2018-12-18
申请号：US14999312
申请日：2016-04-22
申请人： Daniel Smith
发明人： Daniel Smith
摘要： The purpose of diffusion assisted crystal hydrothermal growth is to facilitate a greatly increased crystal growth rate that would save time that is precious in such a material and manpower costly process. The assisted crystal growth itself requires the utilization of a piezoelectric shaker connected to the autoclave in which most industrial hydrothermal crystals are grown. The waveform can be modulated to induce transport of nutrient in a singular direction, customized to the topology of the apparatus. As it stands currently, the growth of most crystals that require autoclaves for their production can take anywhere from 3 months to up to 2 years, and accordingly carries many costs, particularly electricity and supervision of the autoclave(s), and other issues that may arise during the growth. While the product of this labor results in high-quality crystals, in reality, these are not at all what is needed outside of the laboratory environment. Using the assisted crystal hydrothermal growth process, average crystal growth can be cut in half, with the resulting crystals consequently being of a slightly lower quality, though still sufficient for most engineering purposes. Another advantage of using a piezoelectric shaker is that an additional sensor can be added to the autoclave to monitor the health of the autoclave using trending data obtained during the growth.
-
公开(公告)号：US09778620B2
公开(公告)日：2017-10-03
申请号：US14423900
申请日：2013-11-06
申请人： Nivarox-FAR S.A.
发明人： Marc Stranczl , Thierry Hessler
摘要： Method for creating a flexible, multistable element (5): a silicon component (S) is etched with a beam (P) connecting two ends (E1, E2) of a rigid mass (MU) having a cross-section more than ten times that of said beam (P), SiO2 is grown at 1100° C. for a duration adjusted to obtain, on said beam (P), a first ratio (RA) of more than 1 between the section of a first peripheral layer (CP1) of SiO2, and that of a first silicon core (A1), and, on said mass (MU), a second ratio (RB) between the section of a second peripheral layer (CP2) of SiO2 and that of a second silicon core (A2), which is less than a hundredth of said first ratio (RA); cooling to ambient temperature is performed, to deform said beam (P) by buckling when said mass (MU) cools and contracts more than said beam (P).
-
公开(公告)号：US09435054B1
公开(公告)日：2016-09-06
申请号：US14638726
申请日：2015-03-04
申请人： Nassim Haramein
发明人： Nassim Haramein
IPC分类号： C30B29/18 , H01L41/187
CPC分类号： C30B29/18 , C30B33/00 , C30B33/06 , H01L41/187 , Y10T428/29
摘要： Crystals having a modified regular tetrahedron shape are provided. Crystals preferably have four substantially identical triangular faces that define four truncated vertices and six chamfered edges. The six chamfered edges can have an average length of l, and an average width of w, and 8≦l/w≦9.5.
摘要翻译： 提供具有改进的正四面体形状的晶体。 晶体优选具有四个基本相同的三角形面，其限定四个截顶和六个倒角边。 六个倒角边缘的平均长度可以为l，平均宽度w和8≤l/w≤9.5。
-
公开(公告)号：US09310771B2
公开(公告)日：2016-04-12
申请号：US14423918
申请日：2013-11-06
申请人： NIVAROX-FAR S.A.
发明人： Marc Stranczl , Thierry Hessler
摘要： A pallet lever mechanism for an escapement mechanism including a structure carrying a balance and an escape wheel, the pallet lever including pallet stones cooperating with the escape wheel, and a flexible, multistable element, and the pallet lever cooperates with the balance with horns of a first portion of the pallet lever connected by one such flexible element to the structure or to a second portion of the pallet lever carrying the pallet stones connected by one such flexible element to the fixed structure or to the first portion. One flexible element includes a prestressed beam buckled in an S or Z shape, the pallet lever mechanism including a pivot forcing the beam to have a node at the middle thereof.
摘要翻译： 一种用于擒纵机构的托盘杠杆机构，其包括承载平衡的结构和擒纵轮，所述托盘杠杆包括与所述擒纵轮配合的托盘石块以及柔性多元件，并且所述托盘杆与所述天平杆与 托盘杠杆的第一部分由一个这样的柔性元件连接到结构上，或者托盘操纵杆的第二部分，托盘操纵杆承载由一个这样的柔性元件连接到固定结构或第一部分的托盘石块。 一个柔性元件包括以S或Z形状弯曲的预应力梁，所述托盘杠杆机构包括枢轴，迫使所述梁在其中间具有节点。
-
7.发明授权Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface 失效用于改善界面处等离子体增强CVD膜的膜质量的方法和装置
公开(公告)号：US06121163A
公开(公告)日：2000-09-19
申请号：US599270
申请日：1996-02-09
IPC分类号： C30B29/18 , C23C16/40 , C23C16/50 , H01L21/205 , H01L21/316 , H05H1/24
CPC分类号： H01J37/32082 , C23C16/401 , H01L21/02131 , H01L21/02274 , H01L21/31629
摘要： A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.
摘要翻译： 一种用于在界面处沉积具有改进的膜质量的层的方法和装置。 该方法包括以下步骤：将惰性气体引入处理室并通过以选定的增加的速率向腔室施加RF功率从惰性气体形成等离子体。 在RF功率达到全功率之后，引入包括反应气体的处理气体以沉积该层。 在优选的实施方案中，反应气体是四乙氧基硅烷。 在另一优选实施方案中，工艺气体还包括氟。
-
8.发明授权Method for locally and globally planarizing chemical vapor deposition of SiO.sub.2 layers onto structured silicon substrates 失效将SiO 2层的化学气相沉积局部和全局平面化到结构化硅衬底上的方法
公开(公告)号：US5399389A
公开(公告)日：1995-03-21
申请号：US94337
申请日：1993-07-20
申请人： Konrad Hieber , Jasper Von Tomkewitsch , Oswald Spindler , Helmuth Treichel , Zvonimir Gabric , Alexander Gschwandtner
发明人： Konrad Hieber , Jasper Von Tomkewitsch , Oswald Spindler , Helmuth Treichel , Zvonimir Gabric , Alexander Gschwandtner
IPC分类号： C30B29/18 , H01L21/316 , H01L21/3205 , H01L21/768 , B05D3/06 , H01L21/02
CPC分类号： H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/02304 , H01L21/02315 , H01L21/31612 , H01L21/76819
摘要： In the ozone-activated deposition of insulating layers, different growth rates can be achieved on differently constituted surfaces. When the surfaces of the structured silicon substrates lying at different levels are differently constituted or, respectively, are intentionally varied such that the SiO.sub.2 insulating layer grows more slowly on the higher surfaces than on the more deeply disposed surfaces and when deposition is carried out until the surfaces of the rapidly growing and slowly growing layer regions form a step-free, planar level, a local and global planarization is achieved.
摘要翻译： 在绝缘层的臭氧活化沉积中，可以在不同构造的表面上实现不同的生长速率。 当不同层次的结构硅衬底的表面被不同地构成或分别有意地改变，使得SiO 2绝缘层在较高表面上比在更深的设置表面上更缓慢地生长，并且当沉积被执行直到 快速生长和缓慢生长的层区域的表面形成无梯度的平面水平，实现局部和全局平坦化。
-
公开(公告)号：US4445523A
公开(公告)日：1984-05-01
申请号：US489929
申请日：1983-04-29
申请人： Rolf Bruning , Klaus Reimann
发明人： Rolf Bruning , Klaus Reimann
摘要： Apparatus for cleaning the surface of small quartz-crystal pieces with aqueous hydrofluoric acid is disclosed wherein the quartz pieces are introduced into a vessel containing a conveying means and conveyed e.g. horizontally in counter-current to aqueous hydrofluoric acid introduced at the opposed end of the vessel. During the washing the quartz pieces are tumbled.
摘要翻译： 公开了用氢氟酸水溶液清洗小石英晶片的表面的装置，其中将石英片引入含有输送装置的容器中， 水平地与在容器的相对端引入的氢氟酸水反向。 在洗涤过程中，石英碎片翻滚。
-
公开(公告)号：US4030966A
公开(公告)日：1977-06-21
申请号：US590888
申请日：1975-06-27
CPC分类号： C30B7/00 , Y10S117/902 , Y10S117/911 , Y10T117/1096 , Y10T24/344
摘要： This invention relates to a method of growing a single quartz crystal stone. In particular, a method for hydrothermally growing a quartz stone from a quartz seed is disclosed. A substantially stress-free quartz stone is grown in an autoclave by clamping a quartz crystal seed plate in a clip so as to permit substantially unobstructed growth of the stone in the plane of the seed plate, and growing at least a portion of the stone through at least one aperture formed in the clip.
摘要翻译： 本发明涉及生长单个石英晶体石的方法。 特别地，公开了一种从石英种子水热生长石英石的方法。 通过将石英晶种子板夹在夹子中，将基本上无应力的石英石生长在高压釜中，以允许石块在种子板的平面内基本上无障碍地生长，并且使至少一部分石头通过 形成在夹子中的至少一个孔。
-
-
-
-
-
-
-
-
-
搜索结果
63 条记录 (耗时 0.025 秒)
