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    THROUGH SUBSTRATE VIA INCLUDING VARIABLE SIDEWALL PROFILE
    1.
    发明申请
    THROUGH SUBSTRATE VIA INCLUDING VARIABLE SIDEWALL PROFILE 有权
    通过基础包括可变的平台轮廓

    公开(公告)号：US20090278237A1

    公开(公告)日：2009-11-12

    申请号：US12115564

    申请日：2008-05-06

    申请人： Edward Crandal Cooney, III ,  Peter James Lindgren ,  Dorreen Jane Ossenkop ,  Anthony Kendall Stamper

    发明人： Edward Crandal Cooney, III ,  Peter James Lindgren ,  Dorreen Jane Ossenkop ,  Anthony Kendall Stamper

    IPC分类号： H01L23/48 ,  H01L21/4763

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture within a substrate. Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region at a surface of the substrate; (2) a constricted region contiguous with the first comparatively wide region; (3) a second comparatively wide region contiguous with the constricted region; and (4) a tapered region contiguous with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via that is filled into the aperture.

    摘要翻译： 诸如半导体结构的微电子结构和用于制造微电子结构的方法包括在衬底内的孔。 进入孔位于并形成通孔。 通孔可以包括通孔基板通孔。 所述孔包括，至少部分地依次连续地进行穿过所述基底：（1）在所述基底的表面处的第一相对较宽的区域; （2）与第一相对宽的区域相邻的收缩区域; （3）与收缩区域相邻的第二相对宽的区域; 和（4）与第二较宽区域相邻的锥形区域。 孔的结构提供了填充孔的容易性，以及填充到孔中的通孔内的空隙隔离。

    By-product collecting processes for cleaning processes
    2.
    发明授权
    By-product collecting processes for cleaning processes 有权
    用于清洁过程的副产品收集过程

    公开(公告)号：US08052799B2

    公开(公告)日：2011-11-08

    申请号：US11548717

    申请日：2006-10-12

    申请人： Edward Crandal Cooney, III ,  William Joseph Murphy ,  Anthony Kendall Stamper ,  David Craig Strippe

    发明人： Edward Crandal Cooney, III ,  William Joseph Murphy ,  Anthony Kendall Stamper ,  David Craig Strippe

    IPC分类号： C23F1/00 ,  H01L21/02 ,  B08B17/02

    CPC分类号： H01L21/67028 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/02063

    摘要： An apparatus and a method for operating the same. The method includes providing an apparatus which includes a chamber, wherein the chamber includes first and second inlets, an anode and a cathode structures in the chamber, and a wafer on the cathode structure. A cleaning gas is injected into the chamber via the first inlet. A collecting gas is injected into the chamber via the second inlet. The cleaning gas when ionized has a property of etching a top surface of the wafer resulting in a by-product mixture in the chamber. The collecting gas has a property of preventing the by-product mixture from depositing back to the surface of the wafer.

    摘要翻译： 一种装置及其操作方法。 该方法包括提供一种包括腔室的装置，其中腔室包括第一和第二入口，腔室中的阳极和阴极结构以及阴极结构上的晶片。 清洁气体经由第一入口注入腔室。 收集气体经由第二入口注入到腔室中。 电离时的清洁气体具有腐蚀晶片的顶面的特性，导致室中的副产物混合物。 收集气体具有防止副产物混合物沉积回晶片表面的性质。

    Method for reducing foreign material concentrations in etch chambers
    3.
    发明授权
    Method for reducing foreign material concentrations in etch chambers 有权
    降低蚀刻室内异物浓度的方法

    公开(公告)号：US07192874B2

    公开(公告)日：2007-03-20

    申请号：US10604367

    申请日：2003-07-15

    申请人： Edward Crandal Cooney, III ,  Anthony Kendall Stamper

    发明人： Edward Crandal Cooney, III ,  Anthony Kendall Stamper

    IPC分类号： H01L21/302

    CPC分类号： H01L21/67069 ,  H01J2237/022 ,  H01L21/02046 ,  H01L21/31138

    摘要： A method of reducing foreign material concentrations in an etch chamber having inner chamber walls is described. The method includes the step of etching a work piece in the etch chamber such that reaction products from the work piece having one or more elements form a first layer of reaction products that partially adhere to the inner chamber walls. A species is introduced into the etch chamber that increases the adhesion of the first layer of reaction products to the inner chamber walls.

    摘要翻译： 描述了在具有内室壁的蚀刻室中减少异物浓度的方法。 该方法包括在蚀刻室中蚀刻工件的步骤，使得具有一个或多个元件的工件的反应产物形成部分粘附到内室壁上的第一反应产物层。 将一种物质引入到蚀刻室中，这增加了第一层反应产物与内室壁的粘附性。

    Through substrate via including variable sidewall profile
    4.
    发明授权
    Through substrate via including variable sidewall profile 有权
    通过包括可变侧壁轮廓的衬底通孔

    公开(公告)号：US08643190B2

    公开(公告)日：2014-02-04

    申请号：US12955429

    申请日：2010-11-29

    申请人： Edward Crandal Cooney, III ,  Peter James Lindgren ,  Doreen Jane Ossenkop ,  Anthony Kendall Stamper

    发明人： Edward Crandal Cooney, III ,  Peter James Lindgren ,  Doreen Jane Ossenkop ,  Anthony Kendall Stamper

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture within a substrate. Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region at a surface of the substrate; (2) a constricted region contiguous with the first comparatively wide region; (3) a second comparatively wide region contiguous with the constricted region; and (4) a tapered region contiguous with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via that is filled into the aperture.

    摘要翻译： 诸如半导体结构的微电子结构和用于制造微电子结构的方法包括在衬底内的孔。 进入孔位于并形成通孔。 通孔可以包括通孔基板通孔。 所述孔包括，至少部分地依次连续地进行穿过所述基底：（1）在所述基底的表面处的第一相对较宽的区域; （2）与第一相对宽的区域相邻的收缩区域; （3）与收缩区域相邻的第二相对宽的区域; 和（4）与第二较宽区域相邻的锥形区域。 孔的结构提供了填充孔的容易性，以及填充到孔中的通孔内的空隙隔离。

    Method for reducing foreign material concentrations in etch chambers
    5.
    发明授权
    Method for reducing foreign material concentrations in etch chambers 失效
    降低蚀刻室内异物浓度的方法

    公开(公告)号：US07517802B2

    公开(公告)日：2009-04-14

    申请号：US11550190

    申请日：2006-10-17

    申请人： Edward Crandal Cooney, III ,  Anthony Kendall Stamper

    发明人： Edward Crandal Cooney, III ,  Anthony Kendall Stamper

    IPC分类号： H01L21/302

    CPC分类号： H01L21/67069 ,  H01J2237/022 ,  H01L21/02046 ,  H01L21/31138

    摘要： A method of reducing foreign material concentrations in an etch chamber having inner chamber walls is described. The method includes the step of etching a work piece in the etch chamber such that reaction products from the work piece having one or more elements form a first layer of reaction products that partially adhere to the inner chamber walls. A species is introduced into the etch chamber that increases the adhesion of the first layer of reaction products to the inner chamber walls.

    摘要翻译： 描述了在具有内室壁的蚀刻室中减少异物浓度的方法。 该方法包括在蚀刻室中蚀刻工件的步骤，使得具有一个或多个元件的工件的反应产物形成部分粘附到内室壁上的第一反应产物层。 将一种物质引入到蚀刻室中，这增加了第一层反应产物与内室壁的粘附性。

    Through substrate via including variable sidewall profile
    6.
    发明授权
    Through substrate via including variable sidewall profile 有权
    通过包括可变侧壁轮廓的衬底通孔

    公开(公告)号：US07863180B2

    公开(公告)日：2011-01-04

    申请号：US12115564

    申请日：2008-05-06

    申请人： Edward Crandal Cooney, III ,  Peter James Lindgren ,  Dorreen Jane Ossenkop ,  Anthony Kendall Stamper

    发明人： Edward Crandal Cooney, III ,  Peter James Lindgren ,  Dorreen Jane Ossenkop ,  Anthony Kendall Stamper

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture within a substrate. Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region at a surface of the substrate; (2) a constricted region contiguous with the first comparatively wide region; (3) a second comparatively wide region contiguous with the constricted region; and (4) a tapered region contiguous with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via that is filled into the aperture.

    摘要翻译： 诸如半导体结构的微电子结构和用于制造微电子结构的方法包括在衬底内的孔。 进入孔位于并形成通孔。 通孔可以包括通孔基板通孔。 所述孔包括，至少部分地依次连续地进行穿过所述基底：（1）在所述基底的表面处的第一相对较宽的区域; （2）与第一相对宽的区域相邻的收缩区域; （3）与收缩区域相邻的第二相对宽的区域; 和（4）与第二较宽区域相邻的锥形区域。 孔的结构提供了填充孔的容易性，以及填充到孔中的通孔内的空隙隔离。

    THROUGH SUBSTRATE VIA INCLUDING VARIABLE SIDEWALL PROFILE
    8.
    发明申请
    THROUGH SUBSTRATE VIA INCLUDING VARIABLE SIDEWALL PROFILE 有权
    通过基础包括可变的平台轮廓

    公开(公告)号：US20110068477A1

    公开(公告)日：2011-03-24

    申请号：US12955429

    申请日：2010-11-29

    申请人： Edward Crandal Cooney, III ,  Peter James Lindgren ,  Doreen Jane Ossenkop ,  Anthony Kendall Stamper

    发明人： Edward Crandal Cooney, III ,  Peter James Lindgren ,  Doreen Jane Ossenkop ,  Anthony Kendall Stamper

    IPC分类号： H01L23/538 ,  H05K1/11

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture within a substrate. Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region at a surface of the substrate; (2) a constricted region contiguous with the first comparatively wide region; (3) a second comparatively wide region contiguous with the constricted region; and (4) a tapered region contiguous with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via that is filled into the aperture.

    摘要翻译： 诸如半导体结构的微电子结构和用于制造微电子结构的方法包括在衬底内的孔。 进入孔位于并形成通孔。 通孔可以包括通孔基板通孔。 所述孔包括，至少部分地依次连续地进行穿过所述基底：（1）在所述基底的表面处的第一相对较宽的区域; （2）与第一相对宽的区域相邻的收缩区域; （3）与收缩区域相邻的第二相对宽的区域; 和（4）与第二较宽区域相邻的锥形区域。 孔的结构提供了填充孔的容易性，以及填充到孔中的通孔内的空隙隔离。