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1.
公开(公告)号:US07737050B2
公开(公告)日:2010-06-15
申请号:US11554097
申请日:2006-10-30
申请人: Edward Dennis Adams , Jay Sanford Burnham , Evgeni Gousev , James Spiros Nakos , Heather Elizabeth Preuss , Joseph Francis Shepard, Jr.
发明人: Edward Dennis Adams , Jay Sanford Burnham , Evgeni Gousev , James Spiros Nakos , Heather Elizabeth Preuss , Joseph Francis Shepard, Jr.
IPC分类号: H01L21/31 , H01L21/467
CPC分类号: H01L21/02332 , H01L21/0214 , H01L21/02337 , H01L21/28202 , H01L21/3144
摘要: A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.
摘要翻译: 形成氮化硅氧化物层的方法。 该方法包括:在硅衬底的表面上形成二氧化硅层; 在小于或等于约900℃的温度和大于约500托的压力下进行二氧化硅层的快速热氮化,以形成初始氮化氧化硅层; 并且在小于或等于约900℃的温度和大于约500托的压力下进行初始氮化硅氧化物层的快速热氧化或退火以形成氮化的氧化硅层。 还有一种形成具有氮化硅氧化物介电层的MOSFET的方法。
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2.
公开(公告)号:US20080102650A1
公开(公告)日:2008-05-01
申请号:US11554097
申请日:2006-10-30
申请人: Edward Dennis Adams , Jay Sanford Burnham , Evgeni Gousev , James Spiros Nakos , Heather Elizabeth Preuss , Joseph Francis Shepard
发明人: Edward Dennis Adams , Jay Sanford Burnham , Evgeni Gousev , James Spiros Nakos , Heather Elizabeth Preuss , Joseph Francis Shepard
IPC分类号: H01L21/31
CPC分类号: H01L21/02332 , H01L21/0214 , H01L21/02337 , H01L21/28202 , H01L21/3144
摘要: A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.
摘要翻译: 形成氮化硅氧化物层的方法。 该方法包括:在硅衬底的表面上形成二氧化硅层; 在小于或等于约900℃的温度和大于约500托的压力下进行二氧化硅层的快速热氮化,以形成初始氮化氧化硅层; 并且在小于或等于约900℃的温度和大于约500托的压力下进行初始氮化硅氧化物层的快速热氧化或退火以形成氮化的氧化硅层。 还有一种形成具有氮化硅氧化物介电层的MOSFET的方法。
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