公开(公告)号：US07737050B2

公开(公告)日：2010-06-15

申请号：US11554097

申请日：2006-10-30

申请人： Edward Dennis Adams ,  Jay Sanford Burnham ,  Evgeni Gousev ,  James Spiros Nakos ,  Heather Elizabeth Preuss ,  Joseph Francis Shepard, Jr.

发明人： Edward Dennis Adams ,  Jay Sanford Burnham ,  Evgeni Gousev ,  James Spiros Nakos ,  Heather Elizabeth Preuss ,  Joseph Francis Shepard, Jr.

IPC分类号： H01L21/31 ,  H01L21/467

CPC分类号： H01L21/02332 ,  H01L21/0214 ,  H01L21/02337 ,  H01L21/28202 ,  H01L21/3144

摘要： A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.

摘要翻译： 形成氮化硅氧化物层的方法。 该方法包括：在硅衬底的表面上形成二氧化硅层; 在小于或等于约900℃的温度和大于约500托的压力下进行二氧化硅层的快速热氮化，以形成初始氮化氧化硅层; 并且在小于或等于约900℃的温度和大于约500托的压力下进行初始氮化硅氧化物层的快速热氧化或退火以形成氮化的氧化硅层。 还有一种形成具有氮化硅氧化物介电层的MOSFET的方法。

公开(公告)号：US20080102650A1

公开(公告)日：2008-05-01

申请号：US11554097

申请日：2006-10-30

申请人： Edward Dennis Adams ,  Jay Sanford Burnham ,  Evgeni Gousev ,  James Spiros Nakos ,  Heather Elizabeth Preuss ,  Joseph Francis Shepard

发明人： Edward Dennis Adams ,  Jay Sanford Burnham ,  Evgeni Gousev ,  James Spiros Nakos ,  Heather Elizabeth Preuss ,  Joseph Francis Shepard

IPC分类号： H01L21/31

CPC分类号： H01L21/02332 ,  H01L21/0214 ,  H01L21/02337 ,  H01L21/28202 ,  H01L21/3144

摘要： A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.

摘要翻译： 形成氮化硅氧化物层的方法。 该方法包括：在硅衬底的表面上形成二氧化硅层; 在小于或等于约900℃的温度和大于约500托的压力下进行二氧化硅层的快速热氮化，以形成初始氮化氧化硅层; 并且在小于或等于约900℃的温度和大于约500托的压力下进行初始氮化硅氧化物层的快速热氧化或退火以形成氮化的氧化硅层。 还有一种形成具有氮化硅氧化物介电层的MOSFET的方法。

公开(公告)号：US08236580B2

公开(公告)日：2012-08-07

申请号：US12973062

申请日：2010-12-20

申请人： Jay Sanford Burnham ,  Joseph Kerry Vaughn Comeau ,  Leslie Peter Crane ,  James Randall Elliott ,  Scott Alan Estes ,  James Spiros Nakos ,  Eric Jeffrey White

发明人： Jay Sanford Burnham ,  Joseph Kerry Vaughn Comeau ,  Leslie Peter Crane ,  James Randall Elliott ,  Scott Alan Estes ,  James Spiros Nakos ,  Eric Jeffrey White

IPC分类号： H01L21/00

CPC分类号： H01L22/20 ,  H01L22/12

摘要： A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.

摘要翻译： 监测铜污染的方法。 该方法包括：（a）将N型掺杂剂离子注入到单晶硅衬底的区域中，所述区域邻接衬底的顶表面; （c）通过在惰性气氛中在500℃或更高的温度下对衬底退火来活化N型掺杂剂; （c）在一段时间内将基底浸入水溶液中，以监测铜污染的水溶液; 和（d）通过基底区域确定从水溶液中吸附的铜的量。

公开(公告)号：US20090088984A1

公开(公告)日：2009-04-02

申请号：US11863623

申请日：2007-09-28

申请人： Jay Sanford Burnham ,  Joseph Kerry Vaughn Comeau ,  Leslie Peter Crane ,  James Randall Elliott ,  Scott Alan Estes ,  James Spiros Nakos ,  Eric Jeffrey White

发明人： Jay Sanford Burnham ,  Joseph Kerry Vaughn Comeau ,  Leslie Peter Crane ,  James Randall Elliott ,  Scott Alan Estes ,  James Spiros Nakos ,  Eric Jeffrey White

IPC分类号： G01N33/00 ,  G06F19/00

CPC分类号： G01N33/1813 ,  H01L22/12 ,  H01L22/20

摘要： A computer system. The computer system including a processor and memory unit coupled to the processor, the memory unit containing instructions that when executed by the processor implement a method for monitoring a solution in a tank used to fabricate integrated circuits, the method comprising the computer implemented steps of: (a) collecting data indicating of an amount of copper in a region of a substrate of a monitor, the monitor comprising an N-type region in a silicon substrate, the region abutting a top surface of the substrate, the monitor having been submerged in the solution for a preset time; (b) comparing the data to a specification for copper content of the solution; (c) if the data indicates a copper content exceeds a limit of the specification for copper, indicating a corrective action is required to prevent copper contamination of the integrated circuits; and (d) repeating steps (a) through (c) periodically.

摘要翻译： 电脑系统 所述计算机系统包括处理器和耦合到所述处理器的存储器单元，所述存储器单元包含当由所述处理器执行时执行用于监视用于制造集成电路的箱中的解决方案的方法的指令，所述方法包括所述计算机实现的步骤： （a）收集指示在监视器的基板的区域中的铜量的数据，所述监视器包括在硅衬底中的N型区域，所述区域邻接所述衬底的顶表面，所述监视器已经被浸没在 解决方案预设时间; （b）将数据与解决方案中铜含量的规格进行比较; （c）如果数据表明铜含量超过铜规格的限制，则表明需要采取纠正措施以防止集成电路的铜污染; 和（d）定期重复步骤（a）至（c）。

公开(公告)号：US20110086442A1

公开(公告)日：2011-04-14

申请号：US12973062

申请日：2010-12-20

申请人： Jay Sanford Burnham ,  Joseph Kerry Vaughn Comeau ,  Leslie Peter Crane ,  James Randall Elliott ,  Scott Alan Estes ,  James Spiros Nakos ,  Eric Jeffrey White

发明人： Jay Sanford Burnham ,  Joseph Kerry Vaughn Comeau ,  Leslie Peter Crane ,  James Randall Elliott ,  Scott Alan Estes ,  James Spiros Nakos ,  Eric Jeffrey White

IPC分类号： H01L21/66

CPC分类号： H01L22/20 ,  H01L22/12

摘要： A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.

摘要翻译： 监测铜污染的方法。 该方法包括：（a）将N型掺杂剂离子注入到单晶硅衬底的区域中，所述区域邻接衬底的顶表面; （c）通过在惰性气氛中在500℃或更高的温度下对衬底退火来活化N型掺杂剂; （c）在一段时间内将基底浸入水溶液中，以监测铜污染的水溶液; 和（d）通过基底区域确定从水溶液中吸附的铜的量。

公开(公告)号：US07957917B2

公开(公告)日：2011-06-07

申请号：US11863623

申请日：2007-09-28

申请人： Jay Sanford Burnham ,  Joseph Kerry Vaughn Comeau ,  Leslie Peter Crane ,  James Randall Elliott ,  Scott Alan Estes ,  James Spiros Nakos ,  Eric Jeffrey White

发明人： Jay Sanford Burnham ,  Joseph Kerry Vaughn Comeau ,  Leslie Peter Crane ,  James Randall Elliott ,  Scott Alan Estes ,  James Spiros Nakos ,  Eric Jeffrey White

IPC分类号： G01N30/04

CPC分类号： G01N33/1813 ,  H01L22/12 ,  H01L22/20

摘要： A computer system. The computer system including a processor and memory unit coupled to the processor, the memory unit containing instructions that when executed by the processor implement a method for monitoring a solution in a tank used to fabricate integrated circuits, the method comprising the computer implemented steps of: (a) collecting data indicating of an amount of copper in a region of a substrate of a monitor, the monitor comprising an N-type region in a silicon substrate, the region abutting a top surface of the substrate, the monitor having been submerged in the solution for a preset time; (b) comparing the data to a specification for copper content of the solution; (c) if the data indicates a copper content exceeds a limit of the specification for copper, indicating a corrective action is required to prevent copper contamination of the integrated circuits; and (d) repeating steps (a) through (c) periodically.

摘要翻译： 电脑系统 所述计算机系统包括处理器和耦合到所述处理器的存储器单元，所述存储器单元包含当由所述处理器执行时执行用于监视用于制造集成电路的箱中的解决方案的方法的指令，所述方法包括所述计算机实现的步骤： （a）收集指示在监视器的基板的区域中的铜量的数据，所述监视器包括在硅衬底中的N型区域，所述区域邻接所述衬底的顶表面，所述监视器已经被浸没在 解决方案预设时间; （b）将数据与解决方案中铜含量的规格进行比较; （c）如果数据表明铜含量超过铜规格的限制，则表明需要采取纠正措施以防止集成电路的铜污染; 和（d）定期重复步骤（a）至（c）。

公开(公告)号：US07888142B2

公开(公告)日：2011-02-15

申请号：US11863502

申请日：2007-09-28

申请人： Jay Sanford Burnham ,  Joseph Kerry Vaughn Comeau ,  Leslie Peter Crane ,  James Randall Elliott ,  Scott Alan Estes ,  James Spiros Nakos ,  Eric Jeffrey White

发明人： Jay Sanford Burnham ,  Joseph Kerry Vaughn Comeau ,  Leslie Peter Crane ,  James Randall Elliott ,  Scott Alan Estes ,  James Spiros Nakos ,  Eric Jeffrey White

IPC分类号： H01L21/00

CPC分类号： H01L22/20 ,  H01L22/12

摘要： A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.

摘要翻译： 监测铜污染的方法。 该方法包括：（a）将N型掺杂剂离子注入到单晶硅衬底的区域中，所述区域邻接衬底的顶表面; （c）通过在惰性气氛中在500℃或更高的温度下对衬底退火来活化N型掺杂剂; （c）在一段时间内将基底浸入水溶液中，以监测铜污染的水溶液; 和（d）通过基底区域确定从水溶液中吸附的铜的量。

公开(公告)号：US20090087928A1

公开(公告)日：2009-04-02

申请号：US11863502

申请日：2007-09-28

申请人： Jay Sanford Burnham ,  Joseph Kerry Vaughn Comeau ,  Leslie Peter Crane ,  James Randall Elliott ,  Scott Alan Estes ,  James Spiros Nakos ,  Eric Jeffrey White

发明人： Jay Sanford Burnham ,  Joseph Kerry Vaughn Comeau ,  Leslie Peter Crane ,  James Randall Elliott ,  Scott Alan Estes ,  James Spiros Nakos ,  Eric Jeffrey White

IPC分类号： H01L21/66

CPC分类号： H01L22/20 ,  H01L22/12

摘要： A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.

摘要翻译： 监测铜污染的方法。 该方法包括：（a）将N型掺杂剂离子注入到单晶硅衬底的区域中，所述区域邻接衬底的顶表面; （c）通过在惰性气氛中在500℃或更高的温度下对衬底退火来活化N型掺杂剂; （c）在一段时间内将基底浸入水溶液中，以监测铜污染的水溶液; 和（d）通过基底区域确定从水溶液中吸附的铜的量。