公开(公告)号：US20060281238A1

公开(公告)日：2006-12-14

申请号：US11474431

申请日：2006-06-26

申请人： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri ,  Elif Berkman

发明人： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri ,  Elif Berkman

IPC分类号： H01L21/338

CPC分类号： H01L29/7783 ,  H01L29/2003

摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.

摘要翻译： 补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或 在基板的近表面区域内的过量电荷。 缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。 此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。

公开(公告)号：US07485512B2

公开(公告)日：2009-02-03

申请号：US11474431

申请日：2006-06-26

申请人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri ,  Elif Berkman

发明人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri ,  Elif Berkman

IPC分类号： H01L21/338

CPC分类号： H01L29/7783 ,  H01L29/2003

摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.

摘要翻译： 补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或 在基板的近表面区域内的过量电荷。 缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。 此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。