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12 条记录 (耗时 0.012 秒)

    Feedback control for free-space optical systems
    2.
    发明授权
    Feedback control for free-space optical systems 有权
    自由空间光学系统的反馈控制

    公开(公告)号：US07403719B2

    公开(公告)日：2008-07-22

    申请号：US10610092

    申请日：2003-06-30

    申请人： Elisabeth Marley Koontz

    发明人： Elisabeth Marley Koontz

    IPC分类号： H04B10/04 ,  G02B26/00 ,  G02F1/00

    CPC分类号： H04B10/1141

    摘要： Disclosed is a system and method for aligning a free-space optical signal in an optical system having a light modulator having an array of pixels. In this system and method, certain pixels of the light modulator array are initially assigned for the modulation of the free-space optical signal. An alignment optical signal is generated and monitored, to determine whether the optical system components are properly aligned. The alignment optical signal is generated and propagated along a path that is substantially aligned with the path of the free-space optical signal. Detector elements are used to monitor the position (and shifts in the position) of the free-space optical signal. By reassigning the pixels of the array of the light modulator at the direction of a control system, it is possible for the light modulator to compensate for shifts in the alignment of the optical components within the system.

    摘要翻译： 公开了一种用于对准具有具有像素阵列的光调制器的光学系统中的自由空间光信号的系统和方法。 在该系统和方法中，光调制器阵列的某些像素最初被分配用于自由空间光信号的调制。 生成并监视对准光信号，以确定光学系统部件是否正确对准。 对准光信号沿着与自由空间光信号的路径基本上对准的路径生成和传播。 检测器元件用于监视自由空间光信号的位置（和位置偏移）。 通过在控制系统的方向重新分配光调制器的阵列的像素，光调制器可以补偿系统内的光学部件对准的偏移。

    Compact DMD-based optical module
    3.
    发明授权
    Compact DMD-based optical module 有权
    紧凑的基于DMD的光模块

    公开(公告)号：US07203398B2

    公开(公告)日：2007-04-10

    申请号：US10393420

    申请日：2003-03-20

    申请人： Elisabeth Marley Koontz ,  Donald A. Powell

    发明人： Elisabeth Marley Koontz ,  Donald A. Powell

    IPC分类号： G02B6/34 ,  G02B6/26 ,  G02B6/42

    CPC分类号： G02B6/352 ,  G02B6/3552 ,  G02B6/356 ,  G02B6/3588 ,  G02B6/3594 ,  G02B6/4214

    摘要： An optical module having an integral optical waveguide with waveguide ports at each end. The optical waveguide receives an input light beam through a first waveguide port. The input light beam passes through the waveguide and is emitted from the second waveguide port, where it is reflected by the reflective surface. After being reflected by the reflective surface, the input light beam can be directed onto the surface of a DMD array, where the input light beam can be selectively reflected in a particular direction. The reflective surface may also comprise a diffractive grating, thereby enabling wavelength selective switching. In addition, the reflective surface may comprise a generally concave surface that converts a diverging input light beam into a generally collimated light beam, thereby facilitating more accurate selection and switching by the DMD array.

    摘要翻译： 一种光学模块，其具有在每个端部具有波导端口的整体光波导。 光波导通过第一波导端口接收输入光束。 输入光束通过波导并从第二波导端口发射，在那里被反射表面反射。 在被反射表面反射之后，输入光束可以被引导到DMD阵列的表面上，其中输入光束可以被选择性地沿特定方向反射。 反射表面还可以包括衍射光栅，从而实现波长选择性切换。 此外，反射表面可以包括将发散的输入光束转换成大致准直的光束的大致凹面，从而有助于DMD阵列的更精确的选择和切换。

    Strain modulation in active areas by controlled incorporation of nitrogen at si-SiO2 interface
    4.
    发明授权
    Strain modulation in active areas by controlled incorporation of nitrogen at si-SiO2 interface 有权
    通过在si-SiO2界面处控制氮掺入，在有源区域进行应变调制

    公开(公告)号：US08216913B2

    公开(公告)日：2012-07-10

    申请号：US12343780

    申请日：2008-12-24

    申请人： Hiroaki Niimi ,  Elisabeth Marley

    发明人： Hiroaki Niimi ,  Elisabeth Marley

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76237 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/7846

    摘要： Adding nitrogen to the Si—SiO2 interface at STI sidewalls increases carrier mobility in MOS transistors, but control of the amount of nitrogen has been problematic due to loss of the nitrogen during liner oxide growth. This invention discloses a method of forming STI regions which have a controllable layer of nitrogen atoms at the STI sidewall interface. Nitridation is performed on the STI sidewalls by exposure to a nitrogen-containing plasma, by exposure to NH3 gas at high temperatures, or by deposition of a nitrogen-containing thin film. Nitrogen is maintained at a level of 1.0·1015 to 3.0·1015 atoms/cm2, preferably 2.0·1015 to 2.4·1015 atoms/cm2, at the interface after growth of a liner oxide by adding nitrogen-containing gases to an oxidation ambient. The density of nitrogen is adjusted to maximize stress in a transistor adjacent to the STI regions. An IC fabricated according to the inventive method is also disclosed.

    摘要翻译： 在STI侧壁上向Si-SiO 2界面添加氮增加了MOS晶体管中的载流子迁移率，但是由于在衬里氧化物生长期间氮的损失，氮的量的控制是有问题的。 本发明公开了一种形成在STI侧壁界面具有可控氮原子层的STI区的方法。 通过暴露于含氮等离子体，通过在高温下暴露于NH 3气体，或通过沉积含氮薄膜，在STI侧壁上进行氮化。 在通过向氧化环境中加入含氮气体的衬垫氧化物生长之后的界面处，氮保持在1.0×10 15至3.0×10 15原子/ cm 2，优选2.0×10 15至2.4×10 15原子/ cm 2的水平。 调节氮的密度以使与STI区相邻的晶体管中的应力最大化。 还公开了根据本发明方法制造的IC。

    Systems and methods for low leakage strained-channel transistor
    5.
    发明授权
    Systems and methods for low leakage strained-channel transistor 有权
    低泄漏应变通道晶体管的系统和方法

    公开(公告)号：US07026232B1

    公开(公告)日：2006-04-11

    申请号：US11021020

    申请日：2004-12-23

    申请人： Elisabeth Marley Koontz ,  Antonio Luis Pacheco Rotondaro

    发明人： Elisabeth Marley Koontz ,  Antonio Luis Pacheco Rotondaro

    IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/76 ,  H01L21/336

    CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66636

    摘要： The present invention facilitates semiconductor fabrication by providing methods of fabrication that mitigate leakage and apply strain to channel regions of transistor devices. A semiconductor device having gate structures, channel regions, and active regions is provided (102). Extension regions of a first type of conductivity are formed within the active regions (104). Recesses are then formed within a portion of the active regions (106). Second type recess structures are formed (108) within the recesses, wherein the second type recess structures have a second type of conductivity opposite the first type and are comprised of a strain inducing material. Then, first type recess structures are formed (110) within the recesses and on the second type recess structures, wherein the first type recess structures have the first type of conductivity and are comprised of a strain inducing material.

    摘要翻译： 本发明通过提供减少泄漏并施加应变到晶体管器件的沟道区的制造方法来促进半导体制造。 提供具有栅极结构，沟道区和有源区的半导体器件（102）。 在有源区（104）内形成第一类导电性的延伸区。 然后在有源区域（106）的一部分内形成凹陷。 在凹部内形成有第二类型的凹部结构（108），其中第二类型的凹部结构具有与第一类型相反的第二类型的导电性并且由应变诱导材料构成。 然后，在凹部内和第二类型的凹部结构上形成第一类型的凹部结构（110），其中第一类型的凹部结构具有第一类型的导电性并且由应变诱导材料构成。

    STRAIN MODULATION IN ACTIVE AREAS BY CONTROLLED INCORPORATION OF NITROGEN AT Si-SiO2 INTERFACE
    6.
    发明申请
    STRAIN MODULATION IN ACTIVE AREAS BY CONTROLLED INCORPORATION OF NITROGEN AT Si-SiO2 INTERFACE 有权
    通过在Si-SiO 2界面处控制硝态氮掺杂，活性区域的应变调节

    公开(公告)号：US20090159981A1

    公开(公告)日：2009-06-25

    申请号：US12343780

    申请日：2008-12-24

    申请人： Hiroaki Niimi ,  Elisabeth Marley

    发明人： Hiroaki Niimi ,  Elisabeth Marley

    IPC分类号： H01L27/092 ,  H01L21/762 ,  H01L21/8234

    CPC分类号： H01L21/76237 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/7846

    摘要： Adding nitrogen to the Si—SiO2 interface at STI sidewalls increases carrier mobility in MOS transistors, but control of the amount of nitrogen has been problematic due to loss of the nitrogen during liner oxide growth. This invention discloses a method of forming STI regions which have a controllable layer of nitrogen atoms at the STI sidewall interface. Nitridation is performed on the STI sidewalls by exposure to a nitrogen-containing plasma, by exposure to NH3 gas at high temperatures, or by deposition of a nitrogen-containing thin film. Nitrogen is maintained at a level of 1.0·1015 to 3.0·1015 atoms/cm2, preferably 2.0·1015 to 2.4·1015 atoms/cm2, at the interface after growth of a liner oxide by adding nitrogen-containing gases to an oxidation ambient. The density of nitrogen is adjusted to maximize stress in a transistor adjacent to the STI regions. An IC fabricated according to the inventive method is also disclosed.

    摘要翻译： 在STI侧壁上向Si-SiO 2界面添加氮增加了MOS晶体管中的载流子迁移率，但是由于在衬里氧化物生长期间氮的损失，氮的量的控制是有问题的。 本发明公开了一种形成在STI侧壁界面具有可控氮原子层的STI区的方法。 通过暴露于含氮等离子体，通过在高温下暴露于NH 3气体，或通过沉积含氮薄膜，在STI侧壁上进行氮化。 在通过向氧化环境中加入含氮气体的衬垫氧化物生长之后的界面处，氮气保持在1.0.1015至3.0.1015原子/ cm 2的水平，优选为2.0.1015至2.4.1015原子/ cm 2。 调节氮的密度以使与STI区相邻的晶体管中的应力最大化。 还公开了根据本发明方法制造的IC。

    Tailoring channel strain profile by recessed material composition control
    8.
    发明授权
    Tailoring channel strain profile by recessed material composition control 有权
    通过凹陷材料成分控制调整通道应变曲线

    公开(公告)号：US07279406B2

    公开(公告)日：2007-10-09

    申请号：US11021649

    申请日：2004-12-22

    申请人： Elisabeth Marley Koontz

    发明人： Elisabeth Marley Koontz

    IPC分类号： H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L21/823814 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7848

    摘要： The present invention facilitates semiconductor fabrication by providing methods of fabrication that tailor applied strain profiles to channel regions of transistor devices. A strain profile is selected for the channel regions (104). Recessed regions are formed (106) in active regions of a semiconductor device after formation of gate structures according to the selected strain profile. A recess etch (106) is employed to remove a surface portion of the active regions thereby forming the recess regions. Subsequently, a composition controlled recess structure is formed (108) within the recessed regions according to the selected strain profile. The recess structure is comprised of a strain inducing material, wherein one or more of its components are controlled and/or adjusted during formation (108) to tailor the applied vertical channel strain profile.

    摘要翻译： 本发明通过提供定制将应变分布应用于晶体管器件的沟道区域的制造方法来促进半导体制造。 为通道区域（104）选择应变分布。 根据所选择的应变分布，在形成栅极结构之后，在半导体器件的有源区中形成（106）凹陷区域。 采用凹陷蚀刻（106）去除活性区域的表面部分，从而形成凹陷区域。 随后，根据所选择的应变分布，在凹陷区域内形成组合物控制的凹陷结构（108）。 凹陷结构由应变诱导材料组成，其中其一个或多个部件在形成期间被控制和/或调整（108）以调整施加的垂直通道应变分布。