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    HIGH VOLTAGE MOS TRANSISTOR
    1.
    发明申请
    HIGH VOLTAGE MOS TRANSISTOR 审中-公开
    高压MOS晶体管

    公开(公告)号：US20130093015A1

    公开(公告)日：2013-04-18

    申请号：US13581769

    申请日：2010-03-01

    申请人： Deb Kumar Pal ,  Elizabeth Ching Tee Kho ,  Alexander Dietrich Hölke

    发明人： Deb Kumar Pal ,  Elizabeth Ching Tee Kho ,  Alexander Dietrich Hölke

    IPC分类号： H01L29/78 ,  H01L29/66

    CPC分类号： H01L29/7816 ,  H01L21/26506 ,  H01L29/165 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835 ,  H01L29/7848

    摘要： A high voltage metal oxide semiconductor (HVMOS) transistor (1) comprises a drift region (8) comprising a material having a mobility which is higher than a mobility of Si. There is also provided a method of manufacturing said transistor, the method comprising forming a drift region comprising a material having a mobility which is higher than a mobility of Silicon. The material can be a Si—Ge strained material. The on- resistance is reduced compared to a transistor with a drift region made of Si, so that the trade-off between breakdown voltage and on-resistance is improved.

    摘要翻译： 高电压金属氧化物半导体（HVMOS）晶体管（1）包括漂移区（8），其包括迁移率高于Si迁移率的材料。 还提供了一种制造所述晶体管的方法，所述方法包括形成漂移区，其包括具有高于硅的迁移率的迁移率的材料。 该材料可以是Si-Ge应变材料。 与具有由Si制成的漂移区域的晶体管相比，导通电阻降低，从而提高了击穿电压和导通电阻之间的折衷。

    TRANSISTOR
    2.
    发明申请
    TRANSISTOR 有权
    晶体管

    公开(公告)号：US20110198690A1

    公开(公告)日：2011-08-18

    申请号：US12867257

    申请日：2009-02-12

    申请人： Yong Hai Hu ,  Elizabeth Ching Tee Kho ,  Zheng Chao Liu ,  Deb Kumar Pal ,  Michael Mee Gouh Tiong ,  Jian Liu ,  Kia Yaw Kee ,  William Siang Lim Lau

    发明人： Yong Hai Hu ,  Elizabeth Ching Tee Kho ,  Zheng Chao Liu ,  Deb Kumar Pal ,  Michael Mee Gouh Tiong ,  Jian Liu ,  Kia Yaw Kee ,  William Siang Lim Lau

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7834 ,  H01L29/0653 ,  H01L29/42368 ,  H01L29/7835

    摘要： A Metal Oxide Semiconductor (MOS) transistor comprising: a source; a gate; and a drain, the source, gate and drain being located in or on a well structure of a first doping polarity located in or on a substrate; wherein at least one of the source and the drain comprises a first structure comprising: a first region forming a first drift region, the first region being of a second doping polarity opposite the first doping polarity; a second region of the second doping polarity in or on the first region, the second region being a well region and having a doping concentration which is higher than the doping concentration of the first region; and a third region of the second doping polarity in or on the second region. Due to the presence of the second region the transistor may have a lower ON resistance when compared with a similar transistor which does not have the second region. The breakdown voltage may be influenced only to a small extent.

    摘要翻译： 一种金属氧化物半导体（MOS）晶体管，包括：源极; 一个门 以及漏极，源极，栅极和漏极位于位于衬底中或衬底上的第一掺杂极性的阱结构中或其上; 其中所述源极和漏极中的至少一个包括第一结构，所述第一结构包括：形成第一漂移区的第一区，所述第一区具有与所述第一掺杂极性相反的第二掺杂极性; 所述第二区域是所述第二区域中的第二掺杂极性的第二区域，所述第二区域是阱区域，并且具有高于所述第一区域的掺杂浓度的掺杂浓度; 以及在第二区域中或第二区域上的第二掺杂极性的第三区域。 由于存在第二区域，与不具有第二区域的类似晶体管相比，晶体管可能具有较低的导通电阻。 击穿电压可能仅在很小程度上受到影响。