公开(公告)号：US6086269A

公开(公告)日：2000-07-11

申请号：US73177

申请日：1998-05-05

申请人： Stephan Bradl ,  Elke Hietschold

发明人： Stephan Bradl ,  Elke Hietschold

IPC分类号： B05D1/02 ,  G03F7/16 ,  G03F7/30 ,  H01L21/00 ,  G03D5/04 ,  B08B3/02

CPC分类号： H01L21/6715 ,  B05D1/02 ,  G03F7/30 ,  G03F7/16 ,  Y10S134/902

摘要： A method and an apparatus apply a substance, especially a developer, to a surface through jets. Each jet carries the substance to be applied to a predetermined portion of the surface, and each jet essentially applies a predetermined quantity of substance per unit of surface area, wherein at least one jet applies a maximum quantity of substance per unit of surface area to the surface. The quantity of substance per unit of surface area applied by each jet is selected in such a way that it is greater than 1% of the maximum quantity of substance per unit of surface area.

摘要翻译： 一种方法和装置通过射流将物质，特别是显影剂应用于表面。 每个喷射器将待施加的物质施加到表面的预定部分，并且每个射流基本上每单位表面积施加预定量的物质，其中至少一个射流将每单位表面积的最大量的物质施加到 表面。 选择每个喷射器施加的每单位表面积的物质量，使其大于每单位表面积最大量物质的1％。

公开(公告)号：US06586308B2

公开(公告)日：2003-07-01

申请号：US09981856

申请日：2001-10-18

申请人： Sabine Kling ,  Dominique Savignac ,  Hans-Peter Moll ,  Henning Haffner ,  Elke Hietschold ,  Ines Anke

发明人： Sabine Kling ,  Dominique Savignac ,  Hans-Peter Moll ,  Henning Haffner ,  Elke Hietschold ,  Ines Anke

IPC分类号： H01L2120

CPC分类号： H01L27/0203 ,  H01L21/768 ,  H01L23/528 ,  H01L27/105 ,  H01L27/10894 ,  H01L2924/0002 ,  Y10S438/947 ,  H01L2924/00

摘要： A method for producing circuit structures on a semiconductor substrate is described. Photoresist structures are formed, which define functional circuit structures and dummy circuit structures, whereby the dummy circuit structures which are smaller than a minimum structural size are joined to an additional second dummy circuit structure. The additional circuit structure is provided in such a way that the minimum structural size, which is determined by a smallest required joint surface of the photoresist on the substrate, is exceeded. A semiconductor circuit is also provided, which includes functional circuit structures and dummy circuit structures, the dummy circuit structures being joined to the additional dummy circuit structures.

公开(公告)号：US20100040983A1

公开(公告)日：2010-02-18

申请号：US12191492

申请日：2008-08-14

申请人： Heinrich Ollendorf ,  Thomas Zell ,  Michael Kubis ,  Steffen Schmidt ,  Elke Hietschold

发明人： Heinrich Ollendorf ,  Thomas Zell ,  Michael Kubis ,  Steffen Schmidt ,  Elke Hietschold

IPC分类号： G03F7/20

CPC分类号： G03F1/72

摘要： A method of manufacturing integrated circuits includes determining a process-induced displacement (e.g., a stress-induced displacement) between primary structures on a substrate and providing a photomask with mask features assigned to the primary structures. The distances between the mask features are set such that the process-induced displacement is compensated.

摘要翻译： 制造集成电路的方法包括确定衬底上的主要结构之间的过程引起的位移（例如，应力引起的位移），并提供具有分配给主要结构的掩模特征的光掩模。 掩模特征之间的距离被设置为使得处理引起的位移被补偿。