公开(公告)号：US20110263074A1

公开(公告)日：2011-10-27

申请号：US12765458

申请日：2010-04-22

申请人： Amir Al-Bayati ,  Yong K. Chae ,  Shuran Sheng ,  Bhaskar Kumar ,  Eran Valfer

发明人： Amir Al-Bayati ,  Yong K. Chae ,  Shuran Sheng ,  Bhaskar Kumar ,  Eran Valfer

IPC分类号： H01L31/18

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/03767 ,  Y02E10/50 ,  Y02P70/521

摘要： Apparatus and methods for forming a silicon-containing i-layer on a substrate for a thin film photovoltaic cell are disclosed. The apparatus includes a chamber body defining a processing region containing the substrate, a hydrogen source and a silane source coupled to a plasma generation region, an RF power source that applies power at a power level in the plasma generation region to generate a plasma and deposit the silicon-containing i-layer at a selected deposition rate to a selected thickness and a controller. The controller controls the power level and the deposition rate of the i-layer on the substrate such that the thin film solar cell exhibits light induced damage that conforms to a linear fit of the product of the RF power, the deposition rate and the selected thickness of the i-layer. In accordance with further aspects of the present invention, the controller controls the RF power and the deposition rate so that a product (x) of the RF power in watts, the deposition rate of the i-layer in nm per min and the thickness of the i-layer in nm is less than a predetermined number y and satisfies the equation y=5E11*x+3.3749 plus or minus a margin.

摘要翻译： 公开了一种在用于薄膜光伏电池的衬底上形成含硅i层的设备和方法。 该装置包括限定包含衬底的处理区域，氢源和耦合到等离子体产生区域的硅烷源的室主体，在等离子体产生区域中以功率电平施加功率以产生等离子体和沉积物的RF电源 将所选择的沉积速率的含硅i层以选定的厚度和控制器进行。 控制器控制i层在基板上的功率水平和沉积速率，使得薄膜太阳能电池呈现符合RF功率，沉积速率和所选厚度的产品的线性拟合的光诱导损伤 的i层。 根据本发明的另外的方面，控制器控制RF功率和沉积速率，使得RF功率的乘积（x）以瓦为单位，i层的沉积速率（nm / min）和 i层的nm小于预定数量y，并且满足等式y = 5E11 * x + 3.3749加或减边缘。