公开(公告)号：US6005217A

公开(公告)日：1999-12-21

申请号：US149452

申请日：1998-09-09

申请人： Katsuya Watanabe ,  Takashi Sato ,  Eri Haikatak

发明人： Katsuya Watanabe ,  Takashi Sato ,  Eri Haikatak

IPC分类号： H05H1/46 ,  B23K10/00 ,  C23C14/40 ,  C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32192 ,  H01J37/32678

摘要： A microwave plasma processing method capable of processing an object layer having a minute configuration and a laminated object layer without producing any etch residue and of increasing the ratio of the etching selectivity of the object layer to those of a mask and an underlying layer when etching a laminated film. To achieve this, the intensity of a magnetic field created by solenoids surrounding a plasma processing chamber is varied to vary the distance between the object surface of a workpiece and a flat resonance region for etching an object layer and for overetching the object layer to vary the position of a plasma produced by the interaction of an electric field created by a microwave and the magnetic field created by the solenoids according to the layers being processed.

摘要翻译： 一种微波等离子体处理方法，其能够处理具有微小构造的物体层和层叠物层，而不产生任何蚀刻残留物，并且当蚀刻所述蚀刻残留物时增加物体层的蚀刻选择性与掩模和下层的蚀刻选择性的比率 层压膜。 为了实现这一点，围绕等离子体处理室的螺线管产生的磁场的强度被改变以改变工件的物体表面与用于蚀刻物体层的平坦共振区域之间的距离，并且用于过蚀刻物体层以改变 通过由微波产生的电场的相互作用产生的等离子体的位置和由螺线管产生的根据被处理的层产生的磁场的位置。

公开(公告)号：US06194680B1

公开(公告)日：2001-02-27

申请号：US09406769

申请日：1999-09-28

申请人： Katsuya Watanabe ,  Takashi Sato ,  Eri Haikatak

发明人： Katsuya Watanabe ,  Takashi Sato ,  Eri Haikatak

IPC分类号： B23K1000

CPC分类号： H01J37/32192 ,  H01J37/32678

摘要： The present invention provides a microwave plasma processing method capable of processing an object layer having a minute configuration and a laminated object layer without producing any etch residue and of increasing the ratio of the etching selectivity of the object layer to those of a mask and the underlying layer when etching a laminated film. The intensity of a magnetic field created by solenoids surrounding a plasma processing chamber is varied to vary the distance between the object surface of a workpiece and a flat resonance region for etching an object layer and for overetching the object layer to vary the position of a plasma produced by the interaction of an electric field created by a microwave and the magnetic field created by the solenoids.

摘要翻译： 本发明提供一种微波等离子体处理方法，其能够处理具有微小构造的物体层和层叠物层，而不产生任何蚀刻残留物，并且增加了对象层的蚀刻选择性与掩模的蚀刻选择性的比率以及底层 当蚀刻层压膜时。 改变围绕等离子体处理室的螺线管产生的磁场的强度，以改变工件的物体表面与用于蚀刻物体层的平坦共振区域之间的距离，以及用于过蚀刻物体层以改变等离子体的位置 由微波产生的电场与由螺线管产生的磁场的相互作用产生。

公开(公告)号：US5925265A

公开(公告)日：1999-07-20

申请号：US492887

申请日：1995-06-20

申请人： Katsuya Watanabe ,  Takashi Sato ,  Eri Haikatak

发明人： Katsuya Watanabe ,  Takashi Sato ,  Eri Haikatak

IPC分类号： H05H1/46 ,  B23K10/00 ,  C23C14/40 ,  C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32192 ,  H01J37/32678

摘要： A microwave plasma processing method capable of processing an object layer having a minute configuration and a laminated object layer without producing any etch residue and of increasing the ratio of the etching selectivity of the object layer to those of a mask and an underlying layer when etching a laminated film. To achieve this, the intensity of a magnetic field created by solenoids surrounding a plasma processing chamber is varied to vary the distance between the object surface of a workpiece and a flat resonance region for etching an object layer and for overetching the object layer to vary the position of a plasma produced by the interaction of an electric field created by a microwave and the magnetic field created by the solenoids according to the layers being processed.