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公开(公告)号:US4087500A
公开(公告)日:1978-05-02
申请号:US426987
申请日:1973-12-20
IPC分类号: C04B37/00 , B29C63/00 , B32B7/02 , B32B18/00 , B32B37/00 , C04B35/591 , C04B35/593 , F01D5/28 , C04B35/58 , C04B35/60
CPC分类号: F01D5/284 , C04B35/591 , C04B35/593
摘要: A method of making a duo density article of silicon nitride is disclosed. A first element is formed by hot pressing silicon nitride particles. The general shape of a second element is formed by injection molding silicon metal particles and a binder and subsequently burning out the binder. The second element is nitrided in a nitriding operation. Facing surface areas of the first element and the second element are bonded together by applying heat to both elements and pressure to one of the elements while the other element is held in a fixed position.
摘要翻译: 公开了一种制造二氧化硅密度制品的方法。 第一元素通过热压氮化硅颗粒形成。 第二元件的一般形状通过注射成型硅金属颗粒和粘合剂并随后烧结粘合剂而形成。 第二个元素在渗氮操作中渗氮。 第一元件和第二元件的表面区域通过对两个元件施加热量并且将压力施加到元件中的一个元件而将另一元件保持在固定位置而接合在一起。