公开(公告)号：US4371707A

公开(公告)日：1983-02-01

申请号：US216045

申请日：1980-12-15

申请人： Richard E. Eibeck ,  Martin A. Robinson ,  Francis E. Evans ,  Eugene B. Recla

发明人： Richard E. Eibeck ,  Martin A. Robinson ,  Francis E. Evans ,  Eugene B. Recla

IPC分类号： C07F5/02

CPC分类号： C07F5/02

摘要： A process for the conversion of boron trifluoride dimethyl ether complex to boron trifluoride dialkyl ether complex substantially free of dimethyl ether impurities, which comprises reacting the boron trifluoride-dimethyl ether complex, in the liquid phase, in the presence of dialkyl ether wherein at least one of the alkyl groups contains at least two carbon atoms, in a restricted vapor equilibration region, while simultaneously sweeping the said vapor equilibration region with a substantially inert gas, and heating to distill off the dimethyl ether. High purity of the boron trifluoride dialkyl ether complex is attained with this method, with only minimal traces of the boron trifluoride dimethyl ether complex, dimethyl ether remaining. The preferred product is boron trifluoride diethyl ether.

摘要翻译： 一种将三氟化硼二甲醚络合物转化为基本上不含二甲醚杂质的三氟化硼二烷基醚络合物的方法，其包括使三氟化硼 - 二甲醚络合物在液相中在二烷基醚存在下反应，其中至少一种 的烷基在受限的蒸气平衡区域中含有至少两个碳原子，同时用基本上惰性的气体同时吹扫所述蒸气平衡区域，并加热以蒸馏除去二甲醚。 通过该方法可以获得三氟化硼二烷基醚络合物的高纯度，只剩下少量的三氟化硼二甲醚络合物，二甲醚。 优选的产物是三氟化硼二乙醚。

公开(公告)号：US4375453A

公开(公告)日：1983-03-01

申请号：US334719

申请日：1981-12-28

申请人： David Nalewajek ,  Eugene B. Recla ,  Robert A. Wiles ,  Richard E. Eibeck

发明人： David Nalewajek ,  Eugene B. Recla ,  Robert A. Wiles ,  Richard E. Eibeck

IPC分类号： C01F17/00 ,  C01G15/00

CPC分类号： C01F17/0081 ,  C01F17/0012 ,  C01F17/0043 ,  C01G15/00 ,  C01P2004/61 ,  C01P2006/80

摘要： Gd.sub.2 O.sub.3 and Ga.sub.2 O.sub.3 are currently used for the fabrication of Gd.sub.3 Ga.sub.5 O.sub.12 (GGG) wafers which are employed as substrates for bubble domain memory devices. In the processing, in the order of 25% of the starting material ends up as process "saw kerf" contaminated with variable amounts of iron, nickel, magnesium, aluminum, zirconium, iridium and silicon. A process is described whereby the "saw kerf" can be reprocessed in sufficient purity to be re-used in the process, thereby improving the economics of production of GGG wafers significantly. Gadolinium and gallium oxides are recovered and separated from transition metal impurities introduced during fabrication of GGG wafers. The process "saw kerf" produced from slicing the crystal boule is dissolved in HCl, treated with H.sub.2 SO.sub.4, and the resulting sulfates separated. Metathesis with (NH.sub.4).sub.2 C.sub.2 O.sub.4 results in conversion of the sulfates to the ammonium oxalates which were calcined at 850.degree. C. to form Ga.sub.2 O.sub.3 and Gd.sub.2 O.sub.3 of purity >99.99%. The process can be extended to include purification and re-use of by-products generated in other grinding and polishing operations which may result in the recycling of the order of 80% of the generated by-products.

摘要翻译： Gd2O3和Ga2O3目前用于制造用作气泡域记忆装置底物的Gd 3 Ga 5 O 12（GGG）晶片。 在加工过程中，以可变量的铁，镍，镁，铝，锆，铱和硅污染的工艺“锯切”为起始原料的25％。 描述了一种方法，其中“锯切”可以以足够的纯度重新加工以在该过程中重新使用，从而显着提高了GGG晶片的生产经济性。 钆和镓氧化物被回收并与制造GGG晶片期间引入的过渡金属杂质分离。 将从晶体棒上切下的方法“锯切”溶解在HCl中，用H 2 SO 4处理，所得到的硫酸盐分离。 （NH 4）2 C 2 O 4的复分解导致硫酸盐转化成草酸铵，其在850℃下煅烧以形成纯度> 99.99％的Ga 2 O 3和Gd 2 O 3。 该方法可以扩展到包括在其它研磨和抛光操作中产生的副产物的纯化和再利用，这可能导致生成的副产物的80％的量级的再循环。