公开(公告)号：US4375453A

公开(公告)日：1983-03-01

申请号：US334719

申请日：1981-12-28

申请人： David Nalewajek ,  Eugene B. Recla ,  Robert A. Wiles ,  Richard E. Eibeck

发明人： David Nalewajek ,  Eugene B. Recla ,  Robert A. Wiles ,  Richard E. Eibeck

IPC分类号： C01F17/00 ,  C01G15/00

CPC分类号： C01F17/0081 ,  C01F17/0012 ,  C01F17/0043 ,  C01G15/00 ,  C01P2004/61 ,  C01P2006/80

摘要： Gd.sub.2 O.sub.3 and Ga.sub.2 O.sub.3 are currently used for the fabrication of Gd.sub.3 Ga.sub.5 O.sub.12 (GGG) wafers which are employed as substrates for bubble domain memory devices. In the processing, in the order of 25% of the starting material ends up as process "saw kerf" contaminated with variable amounts of iron, nickel, magnesium, aluminum, zirconium, iridium and silicon. A process is described whereby the "saw kerf" can be reprocessed in sufficient purity to be re-used in the process, thereby improving the economics of production of GGG wafers significantly. Gadolinium and gallium oxides are recovered and separated from transition metal impurities introduced during fabrication of GGG wafers. The process "saw kerf" produced from slicing the crystal boule is dissolved in HCl, treated with H.sub.2 SO.sub.4, and the resulting sulfates separated. Metathesis with (NH.sub.4).sub.2 C.sub.2 O.sub.4 results in conversion of the sulfates to the ammonium oxalates which were calcined at 850.degree. C. to form Ga.sub.2 O.sub.3 and Gd.sub.2 O.sub.3 of purity >99.99%. The process can be extended to include purification and re-use of by-products generated in other grinding and polishing operations which may result in the recycling of the order of 80% of the generated by-products.

摘要翻译： Gd2O3和Ga2O3目前用于制造用作气泡域记忆装置底物的Gd 3 Ga 5 O 12（GGG）晶片。 在加工过程中，以可变量的铁，镍，镁，铝，锆，铱和硅污染的工艺“锯切”为起始原料的25％。 描述了一种方法，其中“锯切”可以以足够的纯度重新加工以在该过程中重新使用，从而显着提高了GGG晶片的生产经济性。 钆和镓氧化物被回收并与制造GGG晶片期间引入的过渡金属杂质分离。 将从晶体棒上切下的方法“锯切”溶解在HCl中，用H 2 SO 4处理，所得到的硫酸盐分离。 （NH 4）2 C 2 O 4的复分解导致硫酸盐转化成草酸铵，其在850℃下煅烧以形成纯度> 99.99％的Ga 2 O 3和Gd 2 O 3。 该方法可以扩展到包括在其它研磨和抛光操作中产生的副产物的纯化和再利用，这可能导致生成的副产物的80％的量级的再循环。

公开(公告)号：US4244891A

公开(公告)日：1981-01-13

申请号：US106327

申请日：1979-12-21

申请人： Michael Van Der Puy ,  Louis G. Anello ,  Bernard Sukornick ,  Richard F. Sweeney ,  Robert A. Wiles

发明人： Michael Van Der Puy ,  Louis G. Anello ,  Bernard Sukornick ,  Richard F. Sweeney ,  Robert A. Wiles

IPC分类号： C07C17/26 ,  C07C17/00

CPC分类号： C07C17/26

摘要： The process for preparing hexafluoroisobutylene which comprises reacting, at elevated temperatures, ketene or a ketene-generating compound with hexafluorothioacetone. Hexafluoroisobutylene is a known valuable monomer, which forms polymers of exceptional thermal, chemical and mechanical properties, particularly when copolymerized, such as with vinylidene fluoride.

摘要翻译： 制备六氟异丁烯的方法，其包括在高温下使乙烯酮或产生烯酮的化合物与六氟硫代丙酮反应。 六氟异丁烯是已知的有价值的单体，其形成特殊的热，化学和机械性能的聚合物，特别是当共聚时，例如与偏二氟乙烯。

公开(公告)号：US4319060A

公开(公告)日：1982-03-09

申请号：US214079

申请日：1980-12-08

申请人： William J. Cunningham ,  Addison M. Smith ,  Robert A. Wiles

发明人： William J. Cunningham ,  Addison M. Smith ,  Robert A. Wiles

IPC分类号： C07C17/23 ,  C07C17/395 ,  C07C17/38

CPC分类号： C07C17/23 ,  C07C17/395

摘要： The present invention provides a novel process for producing 1,2-dichloro-1,1,2,2-tetrafluoroethane substantially free of the 1,1-isomer. The process includes contacting, in the vapor phase, an organic feed composition containing a major amount of the 1,2-isomer and a minor amount of 1,1-isomer with hydrogen in the presence of a hydrodechlorination catalyst. The process selectively degrades the 1,1-isomer. Also provided is a process for producing high purity 1,2-isomer.

摘要翻译： 本发明提供了一种生产基本上不含1,1-异构体的1,2-二氯-1,1,2,2-四氟乙烷的新方法。 该方法包括在加氢脱氯催化剂存在下，在气相中使含有主要量的1,2-异构体和少量1,1-异构体的有机进料组合物与氢气接触。 该方法选择性降解1,1-异构体。 还提供了生产高纯度1,2-异构体的方法。