公开(公告)号：US08653585B2

公开(公告)日：2014-02-18

申请号：US13404047

申请日：2012-02-24

申请人： Eun-sun Youm ,  Sang-yong Park ,  Jin-taek Park ,  Yong-top Kim

发明人： Eun-sun Youm ,  Sang-yong Park ,  Jin-taek Park ,  Yong-top Kim

IPC分类号： H01L29/66

CPC分类号： H01L27/11556 ,  H01L27/11582 ,  H01L29/7926

摘要： A nonvolatile memory device having a vertical structure and a method of manufacturing the same, the nonvolatile memory device including a channel region that vertically extends from a substrate; gate electrodes on the substrate, the gate electrodes being disposed along an outer side wall of the channel region and spaced apart from one another; and a channel pad that extends from one side of the channel region to an outside of the channel region, the channel pad covering a top surface of the channel region.

摘要翻译： 一种具有垂直结构的非易失性存储器件及其制造方法，所述非易失性存储器件包括从衬底垂直延伸的沟道区域; 所述栅极电极沿着所述沟道区域的外侧壁设置并且彼此间隔开; 以及沟道垫，其从所述沟道区的一侧延伸到所述沟道区的外部，所述沟道衬垫覆盖所述沟道区的顶表面。

公开(公告)号：US20120228697A1

公开(公告)日：2012-09-13

申请号：US13404047

申请日：2012-02-24

申请人： Eun-sun YOUM ,  Sang-yong PARK ,  Jin-taek PARK ,  Yong-top KIM

发明人： Eun-sun YOUM ,  Sang-yong PARK ,  Jin-taek PARK ,  Yong-top KIM

IPC分类号： H01L29/78

CPC分类号： H01L27/11556 ,  H01L27/11582 ,  H01L29/7926

摘要： A nonvolatile memory device having a vertical structure and a method of manufacturing the same, the nonvolatile memory device including a channel region that vertically extends from a substrate; gate electrodes on the substrate, the gate electrodes being disposed along an outer side wall of the channel region and spaced apart from one another; and a channel pad that extends from one side of the channel region to an outside of the channel region, the channel pad covering a top surface of the channel region.

摘要翻译： 一种具有垂直结构的非易失性存储器件及其制造方法，所述非易失性存储器件包括从衬底垂直延伸的沟道区域; 所述栅极电极沿着所述沟道区域的外侧壁设置并且彼此间隔开; 以及沟道垫，其从所述沟道区的一侧延伸到所述沟道区的外部，所述沟道衬垫覆盖所述沟道区的顶表面。