公开(公告)号：US20120228697A1

公开(公告)日：2012-09-13

申请号：US13404047

申请日：2012-02-24

申请人： Eun-sun YOUM ,  Sang-yong PARK ,  Jin-taek PARK ,  Yong-top KIM

发明人： Eun-sun YOUM ,  Sang-yong PARK ,  Jin-taek PARK ,  Yong-top KIM

IPC分类号： H01L29/78

CPC分类号： H01L27/11556 ,  H01L27/11582 ,  H01L29/7926

摘要： A nonvolatile memory device having a vertical structure and a method of manufacturing the same, the nonvolatile memory device including a channel region that vertically extends from a substrate; gate electrodes on the substrate, the gate electrodes being disposed along an outer side wall of the channel region and spaced apart from one another; and a channel pad that extends from one side of the channel region to an outside of the channel region, the channel pad covering a top surface of the channel region.

摘要翻译： 一种具有垂直结构的非易失性存储器件及其制造方法，所述非易失性存储器件包括从衬底垂直延伸的沟道区域; 所述栅极电极沿着所述沟道区域的外侧壁设置并且彼此间隔开; 以及沟道垫，其从所述沟道区的一侧延伸到所述沟道区的外部，所述沟道衬垫覆盖所述沟道区的顶表面。

公开(公告)号：US20100093173A1

公开(公告)日：2010-04-15

申请号：US12501515

申请日：2009-07-13

申请人： Sang-yong PARK ,  Jae-kwan PARK ,  Dong-hwa KWAK ,  Byung-kwan YOU

发明人： Sang-yong PARK ,  Jae-kwan PARK ,  Dong-hwa KWAK ,  Byung-kwan YOU

IPC分类号： H01L21/308

CPC分类号： H01L21/3086 ,  H01L21/76229 ,  H01L27/11526 ,  H01L27/11543 ,  H01L27/11548

摘要： A method in the fabrication of a semiconductor device simultaneously forms different patterns on the same level of the device. The device has a first area and a second area. A low density mask pattern of at least one relatively wide topographic feature is formed on the second area, a plurality of relatively narrow topographic features is formed on the first area, first spacers are formed on side walls of the narrow topographic features in the first area, the relatively narrow topographic features are removed, and the patterns of the first spacers and the relatively wide topographic feature(s) are simultaneously transcribed in the first and second areas, respectively.

摘要翻译： 制造半导体器件的方法同时在器件的同一层上形成不同的图案。 该装置具有第一区域和第二区域。 在第二区域上形成有至少一个相对较宽的地形特征的低密度掩模图案，在第一区域上形成多个相对窄的地形特征，第一间隔物形成在第一区域中的窄形地貌特征的侧壁上 去除相对窄的地形特征，并且分别在第一和第二区域中同时转录第一间隔物的图案和相对宽的地形特征。