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1.发明授权Method for producing an emitter structure and emitter structures resulting therefrom 有权用于产生由其产生的发射极结构和发射极结构的方法公开(公告)号：US09087957B2
公开(公告)日：2015-07-21
申请号：US12608761
申请日：2009-10-29
IPC分类号： H01L31/18 , H01L31/0236 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/02363 , H01L31/068 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A method for forming an emitter structure on a substrate and emitter structures resulting therefrom is disclosed. In one aspect, a method includes forming, on the substrate, a first layer comprising semiconductor material. The method also includes texturing a surface of the first layer, thereby forming a first emitter region from the first layer, wherein the first emitter region has a first textured surface. The method also includes forming a second emitter region at the first textured surface, the second emitter region having a second textured surface.
摘要翻译： 公开了一种在衬底上形成发射极结构的方法和由此产生的发射极结构。 一方面，一种方法包括在衬底上形成包含半导体材料的第一层。 该方法还包括纹理化第一层的表面，从而从第一层形成第一发射区，其中第一发射区具有第一纹理表面。 该方法还包括在第一纹理表面处形成第二发射极区域，第二发射极区域具有第二纹理表面。
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2.发明申请METHOD FOR PRODUCING AN EMITTER STRUCTURE AND EMITTER STRUCTURES RESULTING THEREFROM 有权用于生成结果的发射器结构和发射结构的方法公开(公告)号：US20100139763A1
公开(公告)日：2010-06-10
申请号：US12608761
申请日：2009-10-29
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/02363 , H01L31/068 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A method for forming an emitter structure on a substrate and emitter structures resulting therefrom is disclosed. In one aspect, a method includes forming, on the substrate, a first layer comprising semiconductor material. The method also includes texturing a surface of the first layer, thereby forming a first emitter region from the first layer, wherein the first emitter region has a first textured surface. The method also includes forming a second emitter region at the first textured surface, the second emitter region having a second textured surface.
摘要翻译： 公开了一种在衬底上形成发射极结构的方法和由此产生的发射极结构。 一方面，一种方法包括在衬底上形成包含半导体材料的第一层。 该方法还包括纹理化第一层的表面，从而从第一层形成第一发射区，其中第一发射区具有第一纹理表面。 该方法还包括在第一纹理表面处形成第二发射极区域，第二发射极区域具有第二纹理表面。
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