公开(公告)号：US20240363790A1

公开(公告)日：2024-10-31

申请号：US18765993

申请日：2024-07-08

申请人： Solarlab Aiko Europe GmbH

发明人： Gang CHEN ,  Wenli XU ,  Kaifu QIU ,  Yongqian WANG ,  Xinqiang YANG

IPC分类号： H01L31/18 ,  H01L31/05

CPC分类号： H01L31/1868 ,  H01L31/0516

摘要： A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.

公开(公告)号：US12125934B2

公开(公告)日：2024-10-22

申请号：US17213961

申请日：2021-03-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Yi-Shin Chu ,  Hsiang-Lin Chen ,  Yin-Kai Liao ,  Sin-Yi Jiang ,  Kuan-Chieh Huang

IPC分类号： H01L31/18 ,  H01L31/02

CPC分类号： H01L31/1812 ,  H01L31/02016 ,  H01L31/1864 ,  H01L31/1868

摘要： A method of manufacturing a semiconductor structure includes: forming a light-absorption layer in a substrate; forming a first doped region of a first conductivity type and a second doped region of a second conductivity type in the light-absorption layer adjacent to the first doped region; depositing a first patterned mask layer over the light-absorption layer, wherein the first patterned mask layer includes an opening exposing the second doped region and covers the first doped region; forming a first silicide layer in the opening on the second doped region; depositing a barrier layer over the first doped region; and annealing the barrier layer to form a second silicide layer on the first doped region.

公开(公告)号：US12125930B2

公开(公告)日：2024-10-22

申请号：US18024611

申请日：2021-09-16

申请人： LONGI GREEN ENERGY TECHNOLOGY CO., LTD.

发明人： Zifeng Li ,  Zhao Wu ,  Chen Xu

IPC分类号： H01L31/0725 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0288 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/0725 ,  H01L31/02164 ,  H01L31/022441 ,  H01L31/0288 ,  H01L31/035272 ,  H01L31/1868 ,  H01L31/02168 ,  H01L31/035218

摘要： The laminated A tandem solar cell includes a bottom cell and a top cell located on the bottom cell, wherein the bottom cell includes a first doping portion and a second doping portion, the first doping portion and the second doping portion form at least one PN junction, majority carriers in the first doping portion are a first type of carrier, and majority carriers in the second doping portion are a second type of carrier; the bottom cell is provided with a first electrode hole and a second electrode hole which penetrate the bottom cell, a first electrode is formed in the first electrode hole, and a second electrode is formed in the second electrode hole; the first electrode is in contact with the first doping portion; and the second electrode is in contact with the second doping portion.

公开(公告)号：US20240332443A1

公开(公告)日：2024-10-03

申请号：US18271678

申请日：2022-01-25

申请人： SOUTH CHINA UNIVERSITY OF TECHNOLOGY

发明人： Guoqiang LI ,  Jixing CHAI ,  Wenliang WANG ,  Hao LI

IPC分类号： H01L31/101 ,  H01L31/0216 ,  H01L31/0304 ,  H01L31/18

CPC分类号： H01L31/1013 ,  H01L31/02161 ,  H01L31/03048 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1868

摘要： A chip for visible-light communication (VLC), a preparation method, and an application of the chip includes a substrate, a buffer layer, an intrinsic GaN layer, a first GaN layer, an i-InxGa1-xN functional layer, a second GaN layer, an i-InyGa1-yN functional layer, a third GaN layer, and a top electrode that are stacked sequentially, where 0≤x

公开(公告)号：US20240304736A1

公开(公告)日：2024-09-12

申请号：US18575629

申请日：2023-02-22

申请人： HENGDIAN GROUP DMEGC MAGNETICS CO., LTD

发明人： Yong REN ,  Yue HE ,  Hailiang REN ,  Shuai GUO ,  Zhaochun SHI ,  Lei ZHANG

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02168 ,  H01L31/02167 ,  H01L31/1868

摘要： Disclosed in the present invention are an all-black crystalline silicon solar cell and a preparation method therefor, and a photovoltaic module. The preparation method comprises the following steps: (1) depositing a film layer on the front face of a silicon wafer by means of a PECVD method so as to obtain a silicon wafer having a coated front face, wherein the film layer is of a laminated structure and comprises an innermost SiNx layer having a thickness of 20 nm or more; (2) subjecting the resulting silicon wafer having the coated front face to back-face PECVD and laser beam grooving so as to obtain a coarse silicon solar cell; and (3) subjecting the resulting coarse silicon solar cell to silk-screen printing and electron injection to then obtain an all-black crystalline silicon solar cell. In the preparation method provided in the present application, the film layer is deposited on the front face of the silicon wafer by means of the PECVD method, the material and thickness of the innermost SiNx layer are designed, and particularly when the thickness thereof is 20 nm or more, the absorption and reflection effects of incident light on the surface of the cell are influenced, such that the incident light is almost completely absorbed, and only an extremely small amount of the incident light is reflected; therefore, the all-black crystalline silicon solar cell is obtained.

公开(公告)号：US12080819B2

公开(公告)日：2024-09-03

申请号：US18059408

申请日：2022-11-28

申请人： ZHEJIANG JINKO SOLAR CO., LTD.

发明人： Zhiqiu Guo ,  Shiliang Huang ,  Yingli Guan

IPC分类号： H01L31/05 ,  H01L31/048 ,  H01L31/0224 ,  H01L31/0465 ,  H01L31/18

CPC分类号： H01L31/05 ,  H01L31/048 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/0465 ,  H01L31/0504 ,  H01L31/1868 ,  Y02E10/50

摘要： A solar cell and a photovoltaic module are provided. The solar cell includes a substrate having first edges and second edges; two first main electrodes, where each first main electrode is close to a corresponding first edge and includes a plurality of first sub-connection pads and a first connection wire; and at least two second main electrodes, where the at least two second main electrodes are disposed between the two first main electrodes, where each of the at least two second main electrodes includes a plurality of second sub-connection pads and a second connection wire, where a first pitch between a respective first main electrode and a second main electrode adjacent to the respective first main electrode is not equal to a second pitch between adjacent second main electrodes.

公开(公告)号：US20240266447A1

公开(公告)日：2024-08-08

申请号：US18125291

申请日：2023-03-23

申请人： ZHEJIANG JINKO SOLAR CO., LTD.

发明人： Changming LIU

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/022433 ,  H01L31/02363 ,  H01L31/182 ,  H01L31/1864 ,  H01L31/1868

摘要： A solar cell, a method for manufacturing solar cell, and a photovoltaic module. The solar cell includes: a semiconductor substrate; a tunneling layer located over a rear surface of the semiconductor substrate; a hydrogen barrier layer located over a surface of the tunneling layer; a lightly doped conductive layer located over a surface of the hydrogen barrier layer; and grid-shaped doped conductive layers located on at least part of a surface of the lightly doped conductive layer, wherein each of the grid-shaped doped conductive layers includes a heavily doped conductive layer and a metal barrier layer that are stacked on one another.

公开(公告)号：US20240194812A1

公开(公告)日：2024-06-13

申请号：US17789741

申请日：2021-12-21

申请人： TONGWEI SOLAR (JINTANG) CO., LTD.

发明人： Jinle WANG

IPC分类号： H01L31/0747 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/0747 ,  H01L31/035272 ,  H01L31/1804 ,  H01L31/1868

摘要： The present disclosure discloses a high-efficiency silicon heterojunction (HJT) solar cell and a manufacturing method thereof, and belongs to the technical field of solar cells. In the solar cell of the present disclosure, an N-type crystal silicon wafer is successively provided with a thin SiO2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO2 layer, an amorphous silicon doped N-type layer, a TCO conductive layer, and an electrode on a front surface; and successively provided with a thin SiO2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO2 layer, an amorphous silicon doped P-type layer, a TCO conductive layer, and an electrode on a rear surface. The amorphous silicon doped P-type layer includes a lightly boron doped amorphous silicon layer and a heavily boron doped amorphous silicon layer.

公开(公告)号：US11961925B2

公开(公告)日：2024-04-16

申请号：US17516533

申请日：2021-11-01

申请人： Alliance for Sustainable Energy, LLC

发明人： Pauls Stradins ,  William Michael Nemeth ,  David Levi Young ,  Caroline Lima Salles de Souza

IPC分类号： H01L31/0224 ,  H01L29/45 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L29/456 ,  H01L31/1868

摘要： The present disclosure relates to a passivating contact that includes a dielectric layer constructed of a first material, an intervening layer constructed of a second material, and a substrate constructed of a semiconductor, where the dielectric layer is positioned between the substrate and the intervening layer, the dielectric layer has a first thickness, and the substrate has a second thickness. The passivating contact also includes a plurality of conductive pathways that include the second material and pass through the first thickness, the second material penetrates into the second thickness forming a plurality of penetrating regions within the substrate, and the plurality of conductive pathways are configured to allow current to pass through the first thickness.

公开(公告)号：US11955571B2

公开(公告)日：2024-04-09

申请号：US18336711

申请日：2023-06-16

申请人： ZHEJIANG JINKO SOLAR CO., LTD. ,  JINKO SOLAR CO., LTD.

发明人： Ruifeng Li ,  Wenqi Li ,  Yankai Qiu ,  Ning Zhang ,  Bin Li

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02168 ,  H01L31/02167 ,  H01L31/1868

摘要： The photovoltaic cell includes a silicon substrate, a first passivation layer, a second passivation layer, at least one silicon oxynitride layer, and at least one silicon nitride layer. The second passivation layer includes a first silicon oxide layer and at least one aluminum oxide layer, a ratio of the number of oxide atoms to the number of aluminum atoms in the at least one aluminum oxide layer is greater than 0.8 and less than 1.6. The number of silicon atoms is greater than the number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than the number of nitrogen atoms in the at least one silicon oxynitride layer. A ratio of the number of silicon atoms to the number of nitrogen atoms in the at least one silicon nitride layer is greater than 1 and less than 4.